• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.171-174
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• 2005

To improve the strength of glass is being studied in order to contribute to weight saving of flat panel displays. Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness by the formation of a heterogeneous Phase inside glass. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5$ glasses were irradiated to strengthen by crystallization using femto-second laser pulse. UV/VIS, Spectroscope, XRD, nano-indenter and SEM etc. irradiation of laser pulse without heat-treated samples was analyzed. Samples irradiated by laser had higher value$(4.4\~4.56{\ast}10-3Pa)$ of elastic modulus which related with strength of glass than values heat-treated samples and these are $1.2\~1.5$ times higher values than them of mother glass. This process can be applicable to the strengthening of thinner glass plate, and it has an advantage over traditional heat-treatment and ion-exchange method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.157-159
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• 2005

본 연구에서는 저온 액상반응법을 이용하여 활성제 Eu의 농도를 10wt%로 도핑하고 열처리를 각각 450, 700, $900^{\circ}C$로 1h 유지하여 $Gd_2O_3:Eu^{3+}$ 나노형광체를 합성하였다. 제조된 형광체의 결정화, 입자크기를 XRD, BET로 분석하였고, 이들이 발광 휘도에 미치는 영향을 확인하였다. 또한 합성된 형광체의 PL(photoluminescence) 특성을 알아보기 위해 여기파장 254nm 의한 발광스펙트럼, 611nm에 의한 여기스펙트럼을 조사하였다. 발광 특성은 611nm에서 주 peak을 갖는 $Eu^{3+}$ 이온에 의한 $^5D_0-^7F_{J(J=0,1,2)}$ 전이에 기인된 전형적인 Red 형광체의 특성을 나타냈고, 입자크기는 평균 20-60nm 정도이고, 발광강도는 열처리 온도가 증가함에 따라 향상되었다.

• Journal of Hydrogen and New Energy
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• v.13 no.2
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• pp.143-150
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• 2002

The thermal behavior of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ prepared by a co-precipitation wasinvestigated for Hz generation by the thermochemical cycle. The reduction reaction of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ started from $480^{\circ}C$, and the weight loss was 1.6 wt% up to $1100^{\circ}C$. At this reaction, $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ was reduced by release of oxygen bonded with the $Fe^{3+}$ ion in the B site of ($CO_{0.5}$ $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$. In the $H_2O$ decomposition reaction, $H_2$ was generated by oxidationof reduced $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$. The crystal structure of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ for reduction reaction maintained spinel structure and the lattice constant of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ ($8.41\AA$) was enlarged to $8.45\AA$. But the lattice constant of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ after $H_2O$ decomposition reaction did not change to $8.45\AA$. Then, $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ is excellent material in the thermochemical cyclic reaction due to release oxygen at low temperature for the reduction reaction and produce $H_2$ maintaining crystal structure for redox reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.229-229
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• 2007

나노결정 합금재료를 전력선 통신 커플러용 자심재료로 응용하기 위해서는 고주파 대역에서의 손실 특성이 제어되어야 한다. 즉 고속 전력선 통신을 위한 자심재료의 투자율 및 완화 주파수 등의 전자기적 특성은 30MHz까지 우수하고 안정적으로 유지되어야 하며, 높은 투자율 및 자속밀도, 공진주파수뿐만 아니라 낮은 전력손실 값을 가져야 한다. 따라서 본 연구에서는 나노결점 합금 리본 표면에 딥 코팅, 졸-겔법, 진공함침 등의 방법을 이용하여 PZT, $TiO_2$ 및 $SiO_2$ 등의 산화물 고저항층을 형성시켜 자기적 성질을 유지하면서 고주파 대역의 와전류 손실을 감소시켜 통신용 자심재료로의 응용성을 향상시키고자 하였다. PZT 슬러리의 제타전위 조절을 통해 최적의 분산조건을 얻을 수 있었고, 평균 150nm인 PZT 입자의 초미립자와 가소제, 분산제, 결합제의 첨가조건을 확립할 수 있었다. 딥-코팅은 슬러리 내 유지시간 10초, 인상속도 5mm/min로 30회 반복되었을 때 가정 우수한 특성을 나타내었으며, 고주파 대역에서의 손실 감소효과를 나타내었다. 그리고 졸-겔법에 의해 제조된 슬러리를 이용한 $TiO_2$와 $SiO_2$ 산화물 저항층 코팅을 통해 금속 알콕사이드의 혼합조건 및 저항층 형성용 슬러리의 제조조건을 확립하였고, 합금 리본표면에 균일하고 우수한 점착력을 가지는 저항층을 형성시킬 수 있었으며, 이에 따른 코어손실의 감소효과를 나타낼 수 있었다. 또한 진공 함침법을 통한 저항층 형성에서, $TiO_2$ 나노분말을 표면 저항층으로 코팅했을 때, 가장 높은 코어손실 감소효과를 나타내었다. 한편, 표면 저항층이 형성된 나노결정 합금으로 제조한 자심재료를 이용하여 전력선 통신용 비접촉식 커플러에의 적용과 시험을 통해 고주파 손실 감소효과에 의한 신호전송 특성과 전류특성을 향상시킬 수 있었다.

• Journal of the Korean Chemical Society
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• v.54 no.5
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• pp.594-602
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• 2010

Since the requirement of the high density integration and thin package technique of semiconductor have been increasing, the main package type of semiconductor will be a chip scale package (CSP). The changes of diffusion coefficient and moisture content ratio of epoxy resin systems according to the change of liquid type epoxy resin and fillers for CSP applications were investigated. The epoxy resins used in this study are RE-304S, RE310S, and HP-4032D, and Kayahard MCD as hardener and 2-methylimidazole as catalyst were used in these epoxy resin systems. The micro-sized and nano-sized spherical type fused silica as filler were used in order to study the moisture absorption properties of these epoxy molding compound (EMC) according to the change of filler size. The temperature of glass transition (Tg) of these EMC was measured using Dynamic Scanning Calorimeter (DSC), and the moisture absorption properties of these EMC according to the change of time were observed at $85^{\circ}C$ and 85% relative humidity condition using a thermo-hygrostat. The diffusion coefficients in these EMC were calculated in terms of modified Crank equation based on Ficks' law. An increase of diffusion coefficient and maximum moisture absorption ratio with Tg in these systems without filler can be observed, which are attributed to the increase of free volume with Tg. In the EMC with filler, the changes of Tg and maximum moisture absorption ratio with the filler content can be hardly observed, however, the diffusion coefficients of these systems with filler content show the outstanding changes according to the filler size. The diffusion via free volume is dominant in the EMC with micro-sized filler; however, the diffusion with the interaction of absorption according the increase of the filler surface area is dominant in the EMC with nano-sized filler.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.65-70
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• 2023

Nanoimprint lithography (NIL) has attracted much attention due to its process simplicity, excellent patternability, process scalability, high productivity, and low processing cost for pattern formation. However, the pattern size that can be implemented on metal materials through conventional NIL technologies is generally limited to the micro level. Here, we introduce a novel hard imprint lithography method, extreme-pressure imprint lithography (EPIL), for the direct nano-to-microscale pattern formation on the surfaces of metal substrates with various thicknesses. The EPIL process allows reliable nanoscopic patterning on diverse surfaces, such as polymers, metals, and ceramics, without the use of ultraviolet (UV) light, laser, imprint resist, or electrical pulse. Micro/nano molds fabricated by laser micromachining and conventional photolithography are utilized for the nanopatterning of Al substrates through precise plastic deformation by applying high load or pressure at room temperature. We demonstrate micro/nanoscale pattern formation on the Al substrates with various thicknesses from 20 ㎛ to 100 mm. Moreover, we also show how to obtain controllable pattern structures on the surface of metallic materials via the versatile EPIL technique. We expect that this imprint lithography-based new approach will be applied to other emerging nanofabrication methods for various device applications with complex geometries on the surface of metallic materials.

• Journal of the Korean Applied Science and Technology
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• v.29 no.2
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• pp.311-316
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• 2012

We are investigated to an electrochemical characteristic for Langmuir-Blodgett (LB) films by cyclic voltammetry method. The phospholipid compound was deposited by using the LB method on the Indium tin oxide(ITO) glass. We tried to measure the electrochemical by using cyclic voltammetry with three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) in 0.5, 1.0, 1.5 and 2.0 N $NaClO_4$ solution. A measuring range was reduced from initial potential -1350 mV, continuously oxidized to 1650 mV. As a result, LB films of the phospholipid compounds are appeared irreversible process caused by only the oxidation current from the cyclic voltammogram. The diffusivity(D) effect of LB films decreased with increasing of phospholipid compound amount.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.5
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• pp.1040-1046
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• 2015

With the rapid progress of electronics and radio communication technology, human enjoys greater freedom in information communication. However, EMW (Electro-Magnetic Wave) environments have become more complicate and difficult to control. Thus, international organizations, such as the American National Standard Institution (ANSI), Federal Communications Commission (FCC), the Comite Internationale Special des Perturbations Radio Electrique (CISPR), etc, have provided standard for controlling the EM wave environments and for the countermeasure of the electromagnetic compatibility (EMC). In this paper, the status of EMW absorbers and the goal of smart EMW absorber in the future were described. Furthermore, design method of the smart EM wave absorber with heat radiating function was suggested. The designed smart EM wave absorber has the absorption ability of more than 20 dB from 2 GHz to 2.45 GHz band, the optimum aperture (hole) size, the adjacent hole space, and the thickness of which were 6 mm, 9 mm, and 6.5 mm, respectively. Thus, it is respected that these results can be applied as various EMC devices in electronic, communication, and controlling systems.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.230-234
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• 2011

In this work, the primary material for a single layered hardmask which can afford a spin-on process was prepared by the minture of organic and inorganic sources. The preparation of hybrid polymer was attempted by esterification from silanol terminated siloxane compounds and acetonide-2,2-bis(methoxy)propionic acid. The optical, thermal and morphological properties of the test hardmask film was examined in terms of cross-linking agent and additives. In addition, the etch rate of hardmask film and photo resist layer were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful for hardmask film to form the nano-patterns.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.