• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.63.1-63.1
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• 2015

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.199-205
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• 2007

In this paper, a novel hexagonal-shaped electromagnetic bandgap(EBG) power plane for the suppression of the ground bounce noise(GBN) in high-speed circuits is proposed. The proposed structure consists of hexagonal-shaped unit cells and detoured bridges connecting the unit cells. The hexagonal-shaped unit cells could omni-directionally suppress the GBN in digital circuits. The fabricated power plane's omni-directional -30 dB suppression bandwidth is from 330 MHz to 5.6 GHz. Then the proposed structure suppresses electromagnetic interference(EMI) caused by the GBN within the stopband. As a result, the proposed structure is expected to be conducive solving EMI problem in high-speed circuits.

• Journal of the Korean Chemical Society
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• v.54 no.2
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• pp.183-191
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• 2010

The phase changes of 1-palmitoyl-$d_{31}$-2-oleoyl-sn-glycero-3-phosphatidylcholine (POPC_$d_{31}$) bilayers distorted by an antimicrobial peptide, a magainin 2 or an aurein 3.3 were investigated by using $^2H$ solid-state NMR (SSNMR) spectroscopy. From the theoretical simulation of the experimental $^2H$ solid-state NMR spectra the geometric structure constants and the lateral diffusion coefficients were obtained in the peptide-lipid mixture phases. Within five days of the peptide action on the lipid bilayers only the distorted alignment of the bilayers were measured but after 100 days an elliptic toroidal pore structure and an inverted hexagonal phase were formed in the presence of magainin 2 and aurein 3.3, respectively. In order to investigate the effect of an anionic lipid molecule on the actions of two peptides on the lipid bilayer, the same experiments were performed on the POPC_$d_{31}$/1-palmitoyl-2-oleoyl-sn-glycero-3-phosphatidylglycerol (POPG) bilayer and the significant differences in the actions of two peptides on two bilayers of POPC_$d_{31}$ and POPC_$d_{31}$/POPG were measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.72-72
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals have been studied intensely. Especially, graphene which have unprecedented performance fulfillments in versatile research fields leads a parade of 2D atomic crystals. In this talk, I will introduce the electrical characterization and applications of graphene for prominently electrical transistors realization. Even the rising 2D atomic crystals such as hexagonal boron nitride (h-BN), molybdenum disulfide (MoS2) and organic thin film for field effect transistor (FET) toward competent enhancement will be mentioned.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.252-256
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• 2010

The study was done to change the morphology and pore size of SBA-15 silica, and the characteristics of SBA-15 silica were investigated with TG-DSC, XRD, SEM, TEM and N2 adsorption-desorption under changing aging conditions. SBA-15 silica having a 2D-hexagonal structure was synthesized and confirmed by SEM and TEM. The structure of mesoporus silica SBA-15 showed a pore having regularly formed hexagonal structure and a passage having a cylindrical shape. This result is in good agreement with the pore forming in XRD and cylindrical shape of the structure in $N_2$ adsorption-desorption isotherm. SBA-15 silica showed a large BET surface area of $603-698\;m^2/g$, a pore volume of $0.673-0.926\;cm^3/g$, a large pore diameter of 5.62-7.42 nm, and a thick pore wall of 3.31-4.37 nm. This result shows that as the aging temperature increases, the BET surface area, pore volume, and pore diameter increase but the pore wall thickness decreases. The BET surface areas in SM-2 and SM-3 are as large as $698\;m^2/g$. However, SM-2 has a large surface area and forms a thick pore wall, when the aging temperature is $100^{\circ}C$ and is synthesized into stable mesoporous SBA-15 silica.

• Journal of Environmental Science International
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• v.5 no.1
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• pp.93-102
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• 1996

Hydrodynamic characteristics such as gas holdup, liquid circulation velocity and bed expansion in a hexagonal inverse fluidized bed were investigated using air-water system by changing the ratio ($A_d$/$A_r$) of cross-sectional area between the riser and the downcomer, the liquid level($H_1$/H), and the superficial gas velocity($U_g$). The gas holdup and the liquid circulation velocity were steadily increased with the superficial gas velocity increasing, but at high superficial gas velocity, some of gas bubbles were carried over to a downcomer and circulated through the column. When the superficial gas velocity was high, the $A_d$/$A_r$ ratio in the range of 1 to 2.4 did not affect the liquid circulation velocity, but the maximum bed expansion was obtained at $A_d$/$A_r$ ratio of 1.25. The liquid circulation velocity was expressed as a model equation below with variables of the cross-sectional area ratio($A_d$/$A_r$) between riser to downcomer, the liquid level($H_1$/H), the superficial gas velocity($U_g$), the sparser height[(H-$H_s$)/H], and the draft Plate level($H_b$/H). $U_{ld}$ = 11.62U_g^{0.75}$${(\frac{H_1}{H})}^{10.30}$${(\frac{A_d}{A_r})}^{-0.52}$${(\frac({H-H_s}{H})}^{0.91}$${(\frac{H_b}{H})}^{0.13}$

• Journal of Advanced Marine Engineering and Technology
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• v.25 no.2
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• pp.345-345
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• 2001

This paper was studied on the characteristics of galvanic corrosion and its protection on heat exchanger tube plate in the sea water. In this paper, behavior of pitting corrosion of Ni-al bronze connected with Ti tube was measured af flow velocity of 0 m/s and 2.4 m/s. To protect galvanic corrosion, the protection characteristics of Ni-Al bronze connected with Ti tube by Zn-base alloys galvanic anode and hexagonal nylon insert was investigated. Main results obtained asre al follows: 1) The galvanic corrosion of Ni-Al bronze connected with Ti-tube is more active than single Ni-al bronze. 2) As the circuit resistance increase under the cathodic protection employing Zn-base alloys galvanic anode, Ni-al bronze connected with Ti tube is cathodically unpolarized. 3) The corrosion of Ni-Al bronze connected with Ti tube by nylon insert controls approximately 73% than not nylon insert.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.2
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• pp.36-46
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• 1984

The Ga1-xInxSe single crystals for 0.0 < x < 0.1 and 0.8 < 1.0 were grown by the Bridgman method. The crystal structure of Ga1-xInxSe is found to be hexagonal for 0.0 < X < 1.0. The Ga1-xInxSesingle crystals have indirect energy gap with a temperature coefficient dEg/dT= -(2.4 - 4.3) $\times$ 10-4 eV/K in the range 60-250K. The temperature dependence of the energy gap can be explained by the electron-Phonos interaction model.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.