• Clean Technology
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• v.27 no.4
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• pp.291-296
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• 2021

Recently, there has been increasing demand for advancing photocatalytic techniques that are capable of the efficient removal of organic pollutants in water. TiO₂, a representative photocatalytic material, has been commonly used as an effective photocatalyst, but it is rather expensive and an alternative is required that will fulfill the requirements of both high performing photocatalytic activities and cost-effectiveness. In this work, ZnO, which is more cost effective than TiO₂, was synthesized by using a microreactor-assisted nanomaterials (MAN) process. The process enabled a continuous production of ZnO nanoparticles (NPs) with a flower-like structure with high uniformity. In order to resolve the limited light absorption of ZnO arising from its large band gap, Ag NPs were uniformly decorated on the flower-like ZnO surface by using the MAN process. The plasmonic effect of Ag NPs led to a broadening of the absorption range toward visible wavelengths. Ag NPs also helped inhibit the electron-hole recombination by drawing electrons generated from the light absorption of the flower-like ZnO NPs. As a result, the Ag-ZnO nanocomposites showed improved photocatalytic activities compared with the flower-like ZnO NPs. The photocatalytic activities were evaluated through the degradation of methylene blue (MB) solution. Scanning electron microscopy (SEM), x-ray diffraction (XRD), and energy-dispersive x-ray spectroscopy (EDS) confirmed the successful synthesis of Ag-ZnO nanocomposites with high uniformity. Ag-ZnO nanocomposites synthesized via the MAN process offer the potential for cost-effective and scalable production of next-generation photocatalytic materials.

• Journal of the Korea Society of Computer and Information
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• v.28 no.8
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• pp.103-109
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• 2023

In this paper, we propose a smart wall switch based on IEEE 802.11b/g/n standard 2.4GHz band communication. As the 4th industrial era evolves, smart home solution development is actively underway, and application cases for smart wall switches are increasing. Most of the Chinese products that preoccupy the market through price competitiveness use Bluetooth and Zigbee communication switches. However, while ZigBee communication is low power, communication speed is slower than Bluetooth and network configuration through a separate hub is additionally required. The Bluetooth method has problems in that the communication range and speed are lower than Wi-Fi communication, the communication standby time is relatively long, and security is weak. In this study, an IEEE 802.11b/g/n smart wall switch applied with Wi-Fi communication technology was developed. In addition, through the two-wire structure, it is designed so that no additional cost is incurred through the construction of a separate neutral line in the building. The result of the study is more than 30% cheaper than the existing wall switch, so it is judged that it will be able to preoccupy the market not only in terms of technological competitiveness but also price competitiveness.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.3
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• pp.98-109
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• 2002

Bluetooth technology is a publicly available specification proposed for Radio Frequency (RF) communication for short-range :1nd point-to-multipoint voice and data transfer. It operates in the 2.4㎓ ISM(Industrial, Scientific and Medical) band and offers the potential for low-cost, broadband wireless access for various mobile and portable devices at range of about 10 meters. In this paper, we describe the structure and the test results of the bluetooth baseband module with direct memory access method we have developed. This module consists of three blocks; link controller, UART interface, and audio CODEC. This module has a bus interface for data communication between this module and main processor and a RF interface for the transmission of bit-stream between this module and RF module. The bus interface includes DMA interface. Compared with the link controller with FIFOs, The module with DMA has a wide difference in size of module and speed of data processing. The small size module supplies lorr cost and various applications. In addition, this supports a firmware upgrade capability through UART. An FPGA and an ASIC implementation of this module, designed as soft If, are tested for file and bit-stream transfers between PCs.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• The Journal of the Acoustical Society of Korea
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• v.30 no.1
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• pp.9-16
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• 2011

When a hydrofoil ship plies at high speed, there exist possibilities of collision with ocean mammals dwelling near the surface. An active sonar located within the immersed hydrofoil structure that provides the lift for the vessel, can be used for early warning of their presence. The proper functioning of the active sonar system depends on its ability to reject noise and pick up the target signal. In this article, we measured the noise on a hydrofoil of an operating ship with two flush-mounted hydrophones. The measurements were conducted for the purpose of (1) identifying the effect of operating state of machinery likes engine, cooler and generator (2) observing the change of noise depending on the measuring position (3) observing the change of noise with increasing ship speed. To verify our experiment, experiments were performed three times and the measured results are compared with other investigations and they show similarity to each other. The results are analyzed with frequency domain in order to apply to operating active sonar detecting system and focus on high frequency band within sonar's operating frequency region. Through these experiments and analysis, it is expected that we can identify the generated noise around hydrofoil where active sonar is installed and these results lead us to design active sonar that could distinguish target signal from noise more effectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.1
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• pp.36-41
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• 2018

This paper presents an implementation of a millimeter-wave(W band) multiflare-angle horn antenna. The proposed antenna is a multimode dual-polarized square horn having equal E- and H-plane beamwidths and consists of a multimode generating section, a four-square-waveguide exciter, orthomode transducers, and power combiners for the sum pattern formation. The antenna structure has been designed to allow for easy fabrication and the designed antenna has been fabricated to a precision of ${\pm}0.02mm$ by layer-by-layer machining and diffusion bonding. The input reflection coefficient and the radiation pattern of the fabricated antenna have been measured using a network analyzer and a far-field test facility. Measurements show that the proposed antenna has 17.7~18.3 dBi gain, $25.2{\sim}28.5^{\circ}$ beamwidth, and an input VSWR between 1.02~1.75, within ${\pm}0.5GHz$ from the center frequency.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.26-31
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• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.9
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• pp.1248-1256
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• 1993

The propagation and delay properties in opical fiber are particularly attractive because digital signal processing and conventional analog signal processing techniques such as those using surface acoustic wave devices are limited In their usefulness for signal bandwidth exceeding one or two GHz, although they are very effective at lower frequencies. Since an accurate, low loss and short time delay elements can be obtained by using such an optical fiber, optical signal precessing has attracted much attention for high speed and broad-band signal precessing in particular channel separation filtering for optical FDM signals. In this paper, we consider a coherent optical lattice filter, which uses coherent light sources and consists of directional couplers and optical fiber delay elemnts. The optical fiber fitters are more restricted than the usual digital filters. The reasons are as follows. 1) the coupling coefficients of directional couplers are restricted to the number between 0 and 1. 2) optical signal E(complex amplitude) is divided into J If-$\boxUl$ and J L/7$\div$$\boxUl$ at the directional coupler. Considering these restrictions and in this case all the coupling coefficients of summing and branching elements are set to be equal, we have given design formulae for optical lattice filter, which make the best use of optical signal energy.

• Journal of the Korean Magnetics Society
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• v.6 no.6
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• pp.405-410
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• 1996

Valence band photoemission spectroscopy (PES) measurements have been performed for $Co_{x}Pd_{100-x}$ alloy films using synchrotron radiation (x = 0, 25, 40, 65). Then the partial spectral weight distributions (PSW's) of Co 3d and Pd 4d electrons have been determined. The Co 3d PSW's exhibit some structures which are quite different from those of the Co film for x < 25 %, whereas they become very similar to those of the Co film for x > 40 %. For x < 25 %, the peak near the Fermi level ($E_F$) and a shoulder around 2 eV binding energy in the Co 3d PSW reflect large hybridization between Pd 4d and Co 3d electrons, suggesting that the hybridization might play an inportant role in determining perpendicualr magnetic anisotropy. The Pd 4d PSW's in Co-Pd alloy films are found to have larger FWHM's (full widths at half maximum), larger binding energies of the main peaks, and larger spectral intensities at $E_F$ than the PES spectrum of the Pd film. The FWHM of the Pd 4d PSW increases with decreasing Pd concentration, which are considered to reflect the disordering effect in the alloy formation or the change in the Pd 4d electronic structure due to hybridization between Co 3d and Pd 4d electrons.

• Journal of the Korean Geophysical Society
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• v.3 no.2
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• pp.77-90
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• 2000

Five electrical resistivity dipole-dipole and two seismic reflection surveys were performed in the southeastern margin of the Yongdong basin to delineate the shallow basin architecture. To investigate the intra-basin structure, twenty four resistivity sounding points and three dipole-dipole lines were selected especially in the vicinity of volcanic masses. The basin-fault boundaries are identified in electrical dipole-dipole resistivity section as high resistivity-contrast of approximately $1,500\;{\Omega}{\cdot}m$, characterized as a band of high standard-deviation. They are also effectively clarified in the seismic reflection data: amplitude and continuity contrasts in the common shot gather, first-arrival profiles, complex attribute plots. The intra-basin resistivity structures are constructed by interpolating vertical electrical sounding data and dipole-dipole profiles. The high-resistivity anomalies most likely originate from the northsouth-trending and northeast-dipping volcanic masses, which are to be further quantitatively investigated with geomagnetic and magnetotelluric surveys.