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3:1 Bandwidth Switch Module by Using GaAs PH Diode (GaAs PIN Diode를 이용한 3:1 대역폭 스위치 모듈)

  • 정명득;이경학;박동철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.5
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    • pp.451-458
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    • 2002
  • Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

Development of a Piecewise Bendable Switch System for the Urban Transit MagLev(I) (도시형 자기부상열차용 굴절형 분기장치의 개발(I))

  • Lee, Jong-Min;Jo, Heung-Je;Kim, In-Geun
    • 연구논문집
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    • s.29
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    • pp.57-67
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    • 1999
  • This paper presents the status quo of the development of a piecewise bendable switch system for the urban transit MagLev. MagLev system as well as railroad requires switch systems to reach its destination. Requirements of the switch system for commercial lines are high speed operation satisfying about 2-3 minute headway and system reliability, etc. Parallel moving type switch system was installed on the test track of urban transit MagLev in KIMM. In this system, switch operation from one position to another can be done in about 90 seconds. Therefore, we concluded that this system can not satisfy the headway for the commercial lines. We decided to develop a high speed piecewise bendable switch system in which switching can be done in 20 seconds. Designed switch system is very complicated in view of operating mechanism. It consists of 11 segmented girder beams driven by hydraulic cylinders. To gain the idea of a piecewise bendable switch system, we manufactured and tested a 1/5 scale switch model. We are going to construct a full scale piecewise bendable switch system next year.

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Characteristics and Architecture of WDM based Large Scale Photonic Packet Switch Network (WDM 기반의 대용량 광 패킷 스위치 네트워크 구성 및 특성)

  • 민성욱;한치문;김해근
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.158-161
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    • 1999
  • This Paper proposes the architecture of WDM(wavelength division multiplexed) based large scale photonic packet switch network, which is composed of the FC(frequency converter) and OM (output module). The features of the proposed WDM based photonic packet switch network are 2-stage switch network, and WDM based internal optical link that is connected between FC and OM. This paper evaluates the internal call blocking characteristics of the photonic packet switch network. In results, we confirmed that the proposed WDM based photonic packet switch network has the potentiality in the practical implementation.

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Model-based Optimal Control Algorithm for the Clamp Switch of Zero-Voltage Switching DC-DC Converter

  • Ahn, Minho;Park, Jin-Hyuk;Lee, Kyo-Beum
    • Journal of Power Electronics
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    • v.17 no.2
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    • pp.323-333
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    • 2017
  • This paper proposes a model-based optimal control algorithm for the clamp switch of a zero-voltage switching (ZVS) bidirectional DC-DC converter. The bidirectional DC-DC converter (BDC) can accomplish the ZVS operation using the clamp switch. The minimum current for the ZVS operation is maintained, and the inductor current is separated from the input and output voltages by the clamp switch in this topology. The clamp switch can decrease the inductor current ripple, switching loss, and conduction loss of the system. Therefore, the optimal control of the clamp switch is significant to improve the efficiency of the system. This paper proposes a model-based optimal control algorithm using phase shift in a micro-controller unit. The proposed control algorithm is demonstrated by the results of PSIM simulations and an experiment conducted in a 1-kW ZVS BDC system.

A Study on Width of Dummy Switch for performance improvement in Current Memory (Current Memory의 성능 개선을 위한 Dummy Switch의 Width에 관한 연구)

  • Jo, Ha-Na;Hong, Sun-Yang;Jeon, Seong-Yong;Kim, Seong-Gwon
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2007.04a
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    • pp.485-488
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    • 2007
  • 최근 Analog Sampled-Data 신호처리를 위하여 주목되고 있는 SI(Switched-Current) circuit은 저전력 동작을 하는 장점이 있지만, 반면에 SI circuit에서의 기본 회로인 Current Memory는 Charge Injection에 의한 Clock Feedthrough이라는 치명적인 단점을 갖고 있다. 따라서 본 논문에서는 Current Memory의 문제점인 Clock Feedthrough의 일반적인 해결방안으로 Dummy Switch의 연결을 검토하였고, Austria Mikro Systeme(AMS)에서 $0.35{\mu}m$ CMOS process BSIM3 Model로 제작하기 위하여 Current Memory의 Switch MOS와 Dummy Switch MOS의 적절한 Width을 정의하여야 하므로, 그 값을 도출하였다. Simulation 결과, Switch의 Width는 $2{\mu}m$, Dummy Switch의 Width는 $2.35{\mu}m$로 정의될 수 있음을 확인하였다.

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Low Loss Power Dividing Switch for Indoor Microwave Power Distribution (마이크로파 실내 배전용 저반사형 전력 분배 스위치)

  • Choi, Young-Kyu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.1
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    • pp.90-94
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    • 2013
  • A low loss power dividing switch in a indoor microwave power distribution system is proposed and designed with a various power dividing ratio. Switching characteristics are analyzed by use of the S-parameter of the switch. Newly proposed switch showed a very low return loss less than -30dB at the operating frequency of 2.45GHz. Three kinds of the switch in which we take out individually 1/2, 1/3 and 1/4 of the input power were fabricated, and measured the delivered, transmitted, and return loss power ratio. Simulated results showed that the lower power ratio is, the better accurate operating performance shows. This switch can switch the input power from 4.5% to 58% with the variance of 5% output power. The experimental results are in good agreement with the simulation within the return loss of 1%.

A Single-Pole, Eight-Throw, Radio-Frequency, MicroElectroMechanical Systems Switch for Multi-Band / Multi-Mode Front-End Module

  • Kang, Sung-Chan;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • Journal of Sensor Science and Technology
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    • v.20 no.2
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    • pp.77-81
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    • 2011
  • This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

High-Isolation SPDT RF Switch Using Inductive Switching and Leakage Signal Cancellation

  • Ha, Byeong Wan;Cho, Choon Sik
    • Journal of electromagnetic engineering and science
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    • v.14 no.4
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    • pp.411-414
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    • 2014
  • A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

ASYMPTOTIC MAXIMUM PACKET SWITCH THROUGHPUT UNDER NONUNIFORM TRAFFIC

  • JEONG-HUN PARK
    • Management Science and Financial Engineering
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    • v.4 no.2
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    • pp.43-58
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    • 1998
  • Packet switch is a key component in high speed digital networks. This paper investigates congestion phenomena in the packet switching with input buffers. For large value of switch size N, mathematical models have been developed to analyze asymptotic maximum switch throughput under nonuniform traffic. Simulation study has also been done for small values of finite N. The rapid convergence of the switch performance with finite switch size to asymptotic solutions implies that asymptotic analytical solutions approximate very closely to maximum throughputs for reasonably large but finite N. Numerical examples show that non-uniformity in traffic pattern could result in serious degradation in packet switch performance, while the maximum switch throughput is 0.586 when the traffic load is uniform over the output trunks. Window scheduling policy seems to work only when the traffic is relatively uniformly distributed. As traffic non-uniformity increases, the effect of window size on throughput is getting mediocre.

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Novel Zero-Current-Switching (BCS) PWM Switch Cell Minimizing Additional Conduction Loss

  • Park, Hang-Seok;Cho, B.H.
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • v.12B no.1
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    • pp.37-43
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    • 2002
  • This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of dc to dc PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of dc to dc PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5㎾ prototype boost converter operating at 40KHz.