• Korean Journal of Materials Research
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• v.6 no.3
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• pp.275-281
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• 1996

YIG 전구체 분말은 요소의 열분해반응을 이용한 균일침전법에 의해서 질산염으로부터 제조하였다. 침전은 철이온이 먼저 침전한 후 이트륨이온이 침전하는 과정으로 이루어졌다. YGI전구체 분말은 철산화물과 비정질로 구성되어 있으며 그 분말의 대략적인 화학식은 2.5Fe2O3.Y3(OH)9-2x(CO3)x.nH2O로 되어있다. YIG 전구체 분말의 열분해과정은 dehydration, 철산화물의 recrystallization, yttrium carbonate 및 yttrium oxide의 형성과 고상반응등 여러단계로 구성되어 있다. 열처리온도가 증가함에 따라 Y2O3와 Fe2O3의 고상반응에 의해 YFeO3 intermediate을 경유해서 YIG상이 형성됨을 확인하였다. 단일상의 YIG는 120$0^{\circ}C$에서 6시간 공기중에서 소성함에 의해서 얻을 수 있었다.

• Applied Chemistry for Engineering
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• v.29 no.5
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• pp.613-619
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• 2018

In this study, various influent sludge pre-treatment methods and the internal recirculation of thickened sludge from effluents using a liquid/solid separation unit were adopted to investigate their effects on the sludge digestion and methane production in a combined mesophilic anaerobic and thermophilic aerobic sludge digestion process. A lab-scale combined sludge digestion process was operated during 5 phases using different feed sludge pre-treatment strategies. In phase 1, the feed sludge was pre-treated with a thermal-alkaline method. In contrast, in phases 2, 3 and 4, the internal recirculation of thickened sludge from the effluent and thermal-alkaline, thermal, and alkaline pre-treatment (7 days) were applied to the combined process. In phase 5, the raw sludge without any pre-treatment was used to the combined process. With the feed sludge pre-treatment and internal recirculation, the experimental results indicated that the volatile suspended solid (VSS) removal was drastically increased from phases 1 to 4. Also, the methane production rate with the thermal-alkaline pre-treatment and internal recirculation was significantly improved, showing an increment to 285 mL/L/day in phase 2. Meanwhile, the VSS removal and methane production in phase 5 were greatly decreased when the raw sludge without any pre-treatment was applied to the combined process. Considering all together, it was concluded that the combined process with the thickened sludge recirculation and thermal-alkaline pre-treatment can be successfully employed for the highly efficient sewage sludge reduction and methane gas production.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.3-5
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• 2001

ZnO thin films are deposited on $SiO_2$/Si (111) substrate by RF magnetron sputtering. The two-step deposition method is proposed to enhance both the c-axis orientation and the resistivity of ZnO films. This method consists of the following two procedures: the 1 st-deposition for 30 min without oxygen at l00W and the 2nd-deposition with oxygen added in the range of $O_2/(Ar+O_2)=10{\sim}50%$. Effects of thermal treatment on the properties of ZnO films are systematically investigated.

• Transactions of the Korean hydrogen and new energy society
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• v.13 no.1
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• pp.52-64
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• 2002

유기성 폐기물을 이용하여 생물학적 수소생산 통합화 시스템 연구를 수행하였다. 통합화 시스템은 유기성폐기물의 전처리, 2단계 혐기발효 및 광합성 배양으로 구성된 생물학적 수소생산 공정, 초임계수 가스화 공정, 생산된 가스의 저장, 분리 및 연료전지를 이용한 전력 생산으로 구성되었다. 실험에 사용된 유기성 폐자원은 식품공장 폐수, 과일폐기물, 하수슬러지이며, 전처리는 폐기물에 따라 열처리 및 물리적 처리를 하였으며, 전처리된 시료는 생물학적 수소생산 공정에 직접 적용되었다. Clostridium butyricum 및 메탄 생성조에서 발생하는 하수슬러지중의 미생물 복합체는 수소생산 혐기 발효공정에 사용되었으며, 광합성 수소생산 미생물인 홍색 비유황 세균은 광합성 배양에 사용되었다. 생물학적 공정에서 발생하는 미생물 슬러지는 초임계수 가스화 공정으로 수소를 발생하였으며, 슬러지 중의 COD를 저하시켰다. 생물학적 공정 및 초임계수 가스화 공정에서 발생하는 수소는 가스탱크에 가입상태로 저장한 후, 95%순도로 분리하였으며, 정제된 수소는 연료전지에 연결하여 전력 생산을 하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.395-395
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• 2009

$CuInSe_2$계 태양전지는 동시 증발공정으로 최고 효율 약 20%를 얻었으나, 동시 증발법은 대면적화 및 조성 균일도 조절에 어려움이 있다. 이에 반해 스퍼터링 및 셀렌화 공정은 동시 증발법에 비해 대면적의 조성 조절 및 생산속도가 뻐른 장점이 있다. 이에 따라 스퍼터링 및 셀렌화 공정을 통해 CIS 태양전지를 양산화 하려는 시도가 전세계적으로 활발히 진행중이다. 그러나 연구소 및 학교를 중심으로 연구가 진행되어 박막 증착 공정 및 단계별 박막 특성이 많은 부분 밝혀진 동시 증발공정에 비해, 몇몇 기업을 중심으로 연구가 진행되고 있는 스퍼터링/셀렌화 공정의 경우 공정 조건 및 이에 따른 박막 특성/형성기구에 대한 정보가 거의 없는 상태이다. 따라서 본 연구에서는 CuIn 및 Cu 타겟을 동시 스퍼터링하여 전구체를 만든후 이를 셀렌화하여 CIS 박막을 성장시키고, 특히 열처리 단계별 상분석을 통해 CIS 형성기구를 고찰하고자 하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.48-56
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• 1999

In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.109-114
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• 2016

Monodispersed $ZnGa_2O_4$ microspheres were synthesized by a facile two-step process consisting of a solvothermal method and calcination process. The prepared monodispersed $ZnGa_2O_4$ microspheres were aggregated into 3D microstructures by self-assembly with a large number of small $ZnGa_2O_4$ particles generated in nucleation. This nucleation and self-assembly making hierarchical microstructures were depended on the concentration of PEG (polyethylene glycol) due to CAC (critical aggregation concentration) theory. And also we controlled the amount of zinc acetate to make pure $ZnGa_2O_4$ phase. Additionally, to fix the optimized calcination condition, sample was characterized by TG-DTA to prove the thermal property in the calcination process and by FT-IR to identify the changes of functional group bonding between each element of the $ZnGa_2O_4$ precursor and oxide calcined at $900^{\circ}C$ for 1 h.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.11a
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• pp.87-95
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• 2005

Laser sealing/cutting technique, one of the 4 core technologies to manufacture self-luminous glass tubes (SLGTs) has been developed. Through the analysis of commercial products it is found that Pyrex Is used for SLGTs. A CO2 laser, which is commonly used for glass work was used for the study The factors affecting the sealing/cutting were laser intensity, duration. Irradiation method, and pressure inside the tube. The whole Process is composed of 2 stages. In the first stage. both ends of the tubes are sealed while tritium is insected in the tubes. And the tritium sealed tubes are cut in the desired size in the second stage. Defocused beam was used for seal ing and focused beam was used for cutting. After the sealing/cutting, the tubes were heat treated to prevent fracture due to the residual heat stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.408.1-408.1
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• 2016

현대 반도체 산업에서 소자의 집적도가 증가함에 따라 층간 절연막의 두께가 줄어들어 RC delay현상이 발생한다. 또한 유연성에 대한 요구도 증가하고 있다. 그 대안으로 저유전 SiO2 무기물, 유무기 복합체, 유기물 등이 크게 각광받고 있다. 본 연구는 SiO2 hollow sphere와 폴리이미드를 이용해 유무기복합체를 합성하고 유전율 측정 및 유연성 테스트를 진행한 내용을 담고있다. 먼저 폴리스티렌에 SiO2를 코팅한 후 폴리이미드 용액과 기계적으로 혼합시킨다. 이후 스핀코팅 및 열처리를 이용해 한단계로 복합체를 합성할수 있다. 합성된 복합체의 유전율은 최소 1.6에 가까운 수치를 나타낸다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.