• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.23-26
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• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• YAKHAK HOEJI
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• v.53 no.3
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• pp.130-137
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• 2009

In this study, isolation of antioxidative compounds was performed for development of anti-oxidizing agent. $CHCl_3$, $H_2O$, 30%, 60% MeOH, MeOH fractions were examined antioxidative activity by DPPH, test of inhibition on NO production. It was revealed that 30%, 60% MeOH and $CHCl_3$ fractions had significant antioxidative activity. In 30% MeOH and 60% MeOH, $CHCl_3$ fraction, six compounds were isolated and elucidated as adenosine(I), guanosine(II), peucedanol 7-O-$\beta$-D-apiofuranosyl(1$\rightarrow$6)-$\beta$-glucopyranoside(III), peucedanol 7-O-$\beta$-D-glucopyranoside(IV), peucedanol(V) and scopoletin(VI) by physicochemical data and spectroscopic methods. (Negative FAB-MS, $^{1}H-NMR$, $^{13}C-NMR$). The results from antioxidative activity screening for the each compound showed that compound IV was relatively superior antioxidant ability. In anti-inflammatory activation assay, compound III, IV, VI had concentration-dependent-activity and compound IV had superior anti-inflammatory ability. These results suggest that Peucedani Radix might be developed as a potent anti-oxidative, anti-inflammatory agents and ingredients for related functional foods.

• Journal of Radiation Protection and Research
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• v.6 no.1
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• pp.34-40
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• 1981

The logical development of an optimum structural shielding design and the computation of protective barriers for high energy radiation therapy room, Toshiba 13 MeV. are presented. We obtained following results by comparison in between the precalculating values and actual survey after complete installation of radiogenerating units. 1. The calculating formula for the protective barrier written in NCRP report #34(1970) was the most ideal and economic calculating methods for the construction of barrier and to determine thickness for the meeting requirements of the number of patients of 80-100 in daily treatment. 2. The precalculating values of protective barrier are 5 times more protective than that of actual measurement. It is depending on radiation workload and utilization the datas most sequrely. 3. The dose rate during exposure are 2-10 mR/hr at out of the door and the controll room. 4. The foul smelling and ozone gas production from long exposure of cancer patients cannot be eliminated when the room is ill ventilated.

• The Journal of the Korea Contents Association
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• v.14 no.2
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• pp.457-466
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• 2014

During irradiation of lesions in cancer treatment with high energy electrons, normal tissue and critical organs are protected by the shielding material. Scattered radiation that generated the shielding materials affect the depth dose and atomic number. Therefore, we want to examine secondary particles and the scattered photons through calculation and its associated analysis, and compare the measurement for the aluminum, copper, and lead shielding substance of which thickness has 95% charge reduction. Dose change rate which effected scattering radiation was found to be +0.88% for material thickness, +0.43% for atomic number, and +19.70%, +15.20%, +12.40% for measurement, +25.00%, +15.10%, +13.70% for calculation on the aluminum, copper, and lead materials of which thickness has 95% charge reduction, respectively, As a result, we found that scattering rate was dependent on thickness than atomic number. In the dose increasing rate, scattered electrons are more important than scattered photon. For the above mentioned reasons, I think that high atomic number materials should be applied to reduce scattered radiation that generated with thickness effect.

• Progress in Medical Physics
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• v.6 no.1
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• pp.49-57
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• 1995

The semiconductor detector has a high sensitive to radiation and a small volume. It has been frequently used in high energy photon and electron beamdosimetry. However, Semiconductor detector are subject to radiation damage in high energy radiation beam which reduces the sensitivity and creat a large discrepancy. In this experiments, P-type semiconductor was irradiated to 18 MeV electron beam with pre-irradiation for reducing the sensitivity for high reproducibility and investigated the dose characteristics against the dose rate variations. The sensitivity per unit dose in small dose rate showed a 35％ large different to a large dose rate with pre-irradiation dose for 0.5 KGy and 20％ for 3 KGyin this study. The silicon detector has showed a large dependency of beam direction with 13％ discrepancy and a linear sensitive as increased temperature.

• Korean Journal of Crystallography
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• v.15 no.2
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• pp.88-92
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• 2004

An organometallic compound, $(C_{16}H_{21}B_{10}BrOSn)$, was synthesized from o-carborane, closo-1-[(methoxyl)methyl]-o-carborane $(HCab^o)$, and $SnMe_2Br_2$. The molecular structure of this complex has been determined by X-ray diffraction. Crystallographic data: orthorhombic, space group Pna2, a = 17.9292(15)$\AA$, b= 7.2066(4)$\AA$, c=13.0582(10)$\AA$, Z=4, V=1687.2(2) $\AA^3$. The structure was solved by direct methods and refined by full-matrix least-squares methods to give a model with a reliability factor R=0.0574 for 1724 reflections.

• Progress in Medical Physics
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• v.27 no.1
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• pp.37-45
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• 2016

In proton therapy, in vivo proton beam range verification is very important to deliver conformal dose to the target volume and minimize unnecessary dose to normal tissue. For this purpose, a multi-slit prompt-gamma camera module made of 24 scintillation detectors and 24-channel signal processing system is under development. In the present study, we have developed and tested a dual-mode signal processing system, which can operate in the energy calibration mode and the fast data acquisition mode, to process the signals from the 24 scintillation detectors. As a result of performance test, using the energy calibration mode, we were able to perform energy calibration for the 24 scintillation detectors at the same time and determine the discrimination levels for the detector channels. Further, using the fast data acquisition mode, we were able to measure a prompt-gamma distribution induced by a 45 MeV proton beam. The measured prompt gamma distribution was found similar to the proton dose distribution at the distal fall-off region, and the estimated beam range was $17.13{\pm}0.76mm$, which is close to the proton beam range of 16.15 mm measured by an EBT film.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.271-275
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from $350{\mu}m$ thickness of $60{\Omega}cm$ NTD-Si wafer and $200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of $V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$) in the middle of its N-base drift region. To explain the small increase of $V_{TM}$, we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region.