• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.167-170
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Argon, Ne discharge for pressure from 1 [mTorr] and input RF power 10 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• Journal of the Korean institute of surface engineering
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• v.43 no.2
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• pp.91-96
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• 2010

SCM440 steels were nitrided using pulsed dc plasma combined with inductively coupled plasma (ICP) generated by 13.56 MHz rf power in order to enhance case hardening depth. The case hardening depth was increased with rf power. The effective case-depth with ICP at 900 watt was as 1.6 times as that nitrided without ICP. The hardening depth was also increased up to 1.45 times. The compound layers formed on top surface were dense and thin when pulsed dc plasma was combined with ICP.

• Journal of the Korean institute of surface engineering
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• v.27 no.4
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.452-455
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.104-104
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• 2010

최근 나노 입자가 항체와 호환이 가능하다는 연구가 진행됨에 따라, 외부에서 나노 입자를 비침투식으로 가열할 수 있다면 암세포만을 선택적으로 치료할 수 있기에, 본 연구는 유도결합 고주파 가열 메커니즘을 이용하여 암세포를 제거할 수 있는 새로운 방법에 관한 내용을 다루고 있다. 13.56 MHz의 고주파를 인가하였으며, 카본나노튜브 용액을 유도 결합 고주파 가열시킨 후 용액의 온도 상승 값을 측정하였다. 또한, 인체와 호환이 가능하도록 제조된 특수용액을 이용하여 유도 결합 고주파 가열 실험을 하였으며, 그에 따른 온도 증가를 측정하였다. 용액의 온도는 농도가 짙고, 고주파 전력이 높으며, 그리고 인가 시간이 길수록 온도 상승이 급격해짐이 관찰되었으며, 이러한 온도 상승은 유도 가열에 의한 에너지 전달이 효과적임을 나타낸다. 따라서 이 유도 결합 고주파 가열법은 비침투식, 선택적 암세포 치료에 적용이 가능할 것으로 예상된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.477-477
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• 2010

태양전지용 TCO(Transfer Conductivity Oxide)는 가시광선 영역에서 높은 광 투과도(optical transmittance), 낮은 저항(resistivity), 우수한 박막 표면 거칠기(roughness) 등의 특성이 요구된다. 현재 가장 많이 사용되는 투명전극은 ITO(Indium Tin Oxide)가 보편적이다. 하지만 ITO에 사용되는 원료 재료인 In이 상대적으로 열적 안정성이 낮아 제조과정에서 필수적으로 수반되는 열처리가 제한적이며, 높은 원료 단가로 인하여 경제적인 측면에서 약점으로 지적되고 있다. 이러한 ITO 투명전극의 대체 재료로서 최근 ZnO 박막의 연구가 활발히 이루어지고 있다. MOCVD(Metal-Organic chemical vapor deposition)로 Soda lime glass 기판위에 약 900nm의 두께로 증착한 BZO(Boron-zinc-oxide)박막을 수소 플라즈마 처리공정을 한 뒤 산소 플라즈마를 이용하여 재처리 하였다. 산소 플라즈마 처리 공정은 RIE(Reactive Ion Etching)방식의 플라즈마 처리 장치를 사용하였고 공정 조건은 13.56 MHz의 RF주파수를 사용하여 RF 전력, 압력, 기판 온도 등을 변화시켜 BZO 박막의 전기적 특성을 측정 및 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.159-159
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.139.2-139.2
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• 2013

6" Multi-crystal Silicon wafer has etched suing a remote - type RF Dielectric barrier discharge (RF DBD) at atmospheric pressure. DBD source is composed of Al electrode and coated Al2O3 dielectric as function of Ar/NF3 gas combination and input power used 13.56 MHz power supply. Ar gas flow rate is changed from 2 to 10 Slm, and NF3 flow rate is changed from 0.2~1 slm. At the result, NF3 flow rate Si etching rate also increase whit the increasing of NF3 flow rate But at 2 slm etching rate was decrease. In this experience, Max etching rate is 2.3 ${\mu}m/min$ when the scan time is 45 sec.

• Textile Coloration and Finishing
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• v.4 no.4
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• pp.110-116
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• 1992

For the modification of PET surface, Perfluoropropene and Methyl alcohol were LT-plasma polymerized on the PET fabrics as thin films by means of 13.56 MHz radio frequency generator. The surface properties of PET fabrics were modified from hydrophobic to hydrophilic by application of the postplasma reaction of thin films. The evidence of the modification was identified by observation of the presence of hydroxy group in IR spectrum and the evaluation of degree of hydrophilicity was performed by measuring frictional static voltage of PET fabric with cotton fabric. For the case of modification by PFP, the result performed at the condition of 25 W, 70 m torr has shown to be effective, and for MeOH, result performed at the condition of 25 W, 100 m torr effective. The effect of hydrophilic surface modification of MeOH plasma polymer was superior to that of PFP-plasma polymer.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.461-466
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• 1999

Diamond-like carbon(DLC) films were directly deposited onto germanium(Ge) witness pieces and lenses by a capacitively coupled 13.56 MHz RF glow discharge plasma with $CH_4$ gas. The characterizations of DLC films were measured using a Raman and FTIR spectrometer. The configuration of Raman and FTIR spectra had a traditional shape. The IR transmittance was measured using an IR spectrophotometer. The maximum values of the IR transmission of Ge with the DLC/Ge/DLC, DLC/Ge/BBAR (broad band antireflection), DLC/Ge, and BBAR/Ge structures are 98%, 93%, 64%, and 63.5%, respectively, which come up to the theoretical values. The uniform DLC films were obtained by a rotation of the cathode at certain conditions.