• Resources Recycling
• /
• v.13 no.6
• /
• pp.37-42
• /
• 2004

The power loss analysis was carried out for Ni-Cu-Zn ferrite sample with different content of NiO and ZnO. The power loss, Pcv decreases monotonically with increasing temperature and attains to a certain value at around 100~120 degrees Celsius. The frequency dependence of Pcv can be explained by Pcv~f$^n$, and n is independent of the frequency, f up to 1 MHz. The Pcv decreases with an increase in ZnO/NiO. The Pcv was separated to hysteresis loss(Ph) and residual loss(Pcv-Ph). The temperature characteristics and compositional dependence of Pcv can be attributed to the Ph, while Pcv-Ph is not affected by both temperature and ZnO/NiO. By analyzing temperature and composition dependence of Ph and initial permeability, ${\mu}_i$ like following equations could be formularized. ${\mu}_i{\mu}_0=I_s^2/(K_I+b{\sigma}_0{\lambda}_s)$ Wh=13.5(I$_s^2/{\mu}_i{\mu}_0)$ Where ${\mu}_0$ is permeability of vacuum, I$_s$ is saturation magnetization, K$_I$ is anisotropy constant, $s_0$ is internal heterogeneous stress, ${\lambda}_s$ is magnetostriction constant, b is unknown constant, and Wh is hysteresis loss per one cycle of excitation (Ph=Wh${\times}$f). Steinmetz constant of Ni-Cu-Zn ferrite, m=1.64~2.2 is smaller than that of Mn-Zn ferrites, which suggests the difference of loss mechanisms between these materials.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.11
• /
• pp.2021-2025
• /
• 2010

Electrical and structural properties were investigated on the effects of ZnO and the lead-free NKN-LST ceramics with the addition of ZnO were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of ZnO addition. For the NKN-LST-ZnO ceramics sintered at $1050^{\circ}C$, bulk density increased with the addition of ZnO and showed maximum value at addition 2.0mol% of ZnO. Curie temperature of the NKN-LST-ZnO ceramics slightly decreased with adding ZnO. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the small amount of ZnO addition, which might be due to the increase in density. The high piezoelectric properties = 153 pC/N, electromechanical coupling factor = 0.484 and dielectric constant = 2883 were obtained for the NKN-LST+0.5ZnO ceramics sintered at $1050^{\circ}C$ for 2h.

• Proceedings of the KIEE Conference
• /
• 1999.07e
• /
• pp.2161-2163
• /
• 1999

Generally, ZnO varistors have dynamic characteristics that the cut-off voltage increases as the time to crest of the varistor current decreases. Dynamic characteristics of ZnO varistor are the most important factor in region of the steep front discharge current particularly. Also, V-I characteristics of ZnO varistor have hysterisis loop in time domain and frequency dependency. This paper deals with ZnO varistor numerical equation and modeling method which takes the behavior of varying clamping voltage into consideration during the time to crest, in range of $1{\mu}m{\sim}50{\mu}m$, of impulse current applied to a ZnO varistor. The simulated results by the proposed model are compared with experimental results for each of the impulse current.

• Solar Energy
• /
• v.19 no.1
• /
• pp.29-36
• /
• 1999

ZnO/n-Si junctions were fabricated by spin coating with ZnO precursor produced by the sol-gel process. In order to increase the electrical conductivity of ZnO films, the films were n-doped with Al impurity and subsequently annealed at about $450^{\circ}C$ under reducing environments. The ohmic contacts between n-Si and AI for a bottom electrode were successfully fabricated by doping the rear surface of Si substrate with phosphorous atoms. The front surface of the substrate was also doped with phosphorous atoms for improving the efficiency of the solar cells. Consequently, conversion efficiencies ranging up to about 5.3% were obtained. These efficiencies were found to decrease slowly with time because of the oxide films formed at the ZnO/Si interface upon oxygen penetration through the porous ZnO. Oxygen barrier layers could be necessary in order to prevent the reduction of conversion efficiencies.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1234-1239
• /
• 1999

Electromagnetic wave asorbing properties of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$, where X was replaced by substitution elements Cu, Mg, Mn, have been studied. The structure, shape, size and magnetic properties of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$ were analyzed by XRD, SEM, VSM. The relative complex permittivity, permeability, and electromagnetic wave absorbing properties were measured by Network Analyzer. The structure, shape, size and magnetization value of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$ were found to be similar in spite of substitution elements. The coercive force and hysteresis-loss showed maximum value when Mg was substituted for X. The dielectric loss(${\varepsilon}_r"/{\varepsilon}_r'$) was found to be maximum value when Mn was substituted for X. Also the magnetic loss(${\mu}_r"/{\mu}_r'$} was found to be maximum with Cu substitution. The electromagnetica wave absorbing property of the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$-Rubber composite with 4mm thickness was excellent as over - 40dB at 9GHz, and the $Ni_{0.5}-Zn_{0.4}-X_{0.1}{\cdot}Fe_2O_4$-Rubber composite with 8mm thickness was over-40dB at 2GHz. Those composites also showed superior microwave absorbing properties.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.12
• /
• pp.3021-3024
• /
• 2009

$Zn_2Ti_{1-x}Fe_xO_4\;(0\;{\leq}\;x\;{\leq}\;0.7)$ photocatalysts were synthesized by polymerized complex (PC) method and investigated for its physico-chemical as well as optical properties. $Zn_2Ti_{1-x}Fe_xO_4$ can absorb not only UV light but also visible light region due to doping of Fe in the Ti site of $Zn_2TiO_4$ lattice because of the band transition from Fe 3d to the Fe 3d + Ti3d hybrid orbital. The photocatalytic activity of Fe doped $Zn_2TiO_4$ samples for hydrogen production under UV light irradiation decreased with an increase in Fe concentration in $Zn_2TiO_4$. Consequently, there exists an optimized concentration of iron for improved photocatalytic activity under visible light (${\lambda}{\leq}$420 nm)

• Electrical & Electronic Materials
• /
• v.3 no.3
• /
• pp.233-241
• /
• 1990

본 연구에서는 xPb(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-yBa(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$-zPbTiO(0.50.leq.x.leq.0.60, 0.10.leq.y.leq.0.20, 0.20.leq.z.leq.0.40)세라믹을 1050.deg.C에서 2시간동안 유지시켜 일반소성법으로 제작하였다. 시편 제작시 조성은 조성변태 상경계부근을 선택하였으며 Ba(Zn$_{1}$3/ Nb$_{2}$3/)O$_{3}$ 고용량에 따른 purochlore상의 억제 및 그 영향을 조사하고 구조적, 유전적 및 압전적 특성을 측정하였다. X-선 회절분석 및 미세구조의 관찰 결과, Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량에 따라 pyrochlore상 및 미반응 물질등은 억제되어 0.20mol 고용된 시편에서는 균질한 perovskite상이 형성되었다. Ba(Zn$_{1}$3/Nb$_{2}$3/)O$_{3}$의 고용량이 증가함에 따라 유전상수는 증가하여 0.50PZN-0.20BZN-0.30PT시편의 경우 6880.9의 높은 값을 나타내었으며 정전용량의 온도계수는 감소하여 0.383[%/.deg.C]의 양호한 값을 나타내었다. 큐리온도는 PbTiO$_{3}$의 고용량이 0.20mol에서 0.40mol로 증가함에 따라 30.deg.C에서 170.deg.C로 증가하였다. 전기기계 결합계수 (K$_{p}$), 기계적 품질계수(Qm) 및 압전전하 계수 (d$_{33}$)는 조성변태 상경계 부근의 조성에서 크게 나타났으며 0.60PZN-0.15BZN-0.25PT 시편의 경우 각각 58.5%, 120.5, 150x$10^{-12}$[C/N]의 값을 나타내었다.다.다.

• Journal of Surface Science and Engineering
• /
• v.41 no.1
• /
• pp.12-15
• /
• 2008

The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.434.2-434.2
• /
• 2014

We observe enhanced pH response of solution-gated field-effect transistors (SG-FET) having 1D-2D hybrid channel of vertical grown ZnO nanorods grown on CVD graphene (Gr). In recent years, SG-FET based on Gr has received a lot of attention for biochemical sensing applications, because Gr has outstanding properties such as high sensitivity, low detection limit, label-free electrical detection, and so on. However, low-defect CVD Gr has hardly pH responsive due to lack of hydroxyl group on Gr surface. On the other hand, ZnO, consists of stable wurtzite structure, has attracted much interest due to its unique properties and wide range of applications in optoelectronics, biosensors, medical sciences, etc. Especially, ZnO were easily grown as vertical nanorods by hydrothermal method and ZnO nanostructures have higher sensitivity to environments than planar structures due to plentiful hydroxyl group on their surface. We prepared for ZnO nanorods vertically grown on CVD Gr (ZnO nanorods/Gr hybrid channel) and to fabricate SG-FET subsequently. We have analyzed hybrid channel FETs showing transfer characteristics similar to that of pristine Gr FETs and charge neutrality point (CNP) shifts along proton concentration in solution, which can determine pH level of solution. Hybrid channel SG-FET sensors led to increase in pH sensitivity up to 500%, compared to pristine Gr SG-FET sensors. We confirmed plentiful hydroxyl groups on ZnO nanorod surface interact with protons in solution, which causes shifts of CNP. The morphology and electrical characteristics of hybrid channel SG-FET were characterized by FE-SEM and semiconductor parameter analyzer, respectively. Sensitivity and sensing mechanism of ZnO nanorods/Gr hybrid channel FET will be discussed in detail.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2013.05a
• /
• pp.165-165
• /
• 2013

브랜치 구조의 나노섬유는 기존의 1-d 나노 구조보다 표면적이 넓으며 이로 인해 가스 센서 특성 향상에 응용 할 수 있다. $SnO_2$ stem nanowire구조에 ZnO branch를 성장시킴으로서 효과적인 가스 센싱을 위한 나노 브랜치 구조의 합성을 하였다.