• Journal of Veterinary Science
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• 제24권1호
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• pp.3.1-3.13
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• 2023

Background: Zinc (Zn) is an essential cofactor for physiological homeostasis in the body. Zn oxide (ZnO), an inorganic compound that supplies Zn, exists in various sizes, and its bioavailability may vary depending on the size in vivo. However, comparative studies on the nutritional effects of micro-sized ZnO (M-ZnO) and nano-sized ZnO (N-ZnO) supplementation on Zn deficiency (ZnD) animal models have not been reported. Objectives: This study investigated the nutritional bioavailability of N-ZnO and M-ZnO particles in dietary-induced ZnD mice. Methods: Animals were divided into six experimental groups: normal group, ZnD control group, and four ZnO treatment groups (Nano-Low, Nano-High, Micro-Low, and MicroHigh). After ZnD induction, N-ZnO or M-ZnO was administered orally every day for 4 weeks. Results: ZnD-associated clinical signs almost disappeared 7 days after N-ZnO or M-ZnO administration. Serum Zn concentrations were higher in the Nano-High group than in the ZnD and M-ZnO groups on day 7 of ZnO treatment. In the liver and testis, Nano-Low and Nano-High groups showed significantly higher Zn concentrations than the other groups after 14-day treatment. ZnO supplementation increased Mt-1 mRNA expression in the liver and testis and Mt-2 mRNA expression in the liver. Based on hematoxylin-and-eosin staining results, N-ZnO supplementation alleviated histological damage induced by ZnD in the testis and liver. Conclusions: This study suggested that N-ZnO can be utilized faster than M-ZnO for nutritional restoration at the early stage of ZnD condition and presented Mt-1 as an indicator of Zn status in the serum, liver, and testis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.164-164
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• 2010

The impurity doped ZnO has been extensively studied because of its optoelectric properties. GIZO (Ga-In-Zn-O) amorphous oxide semiconductors has been widely used as transparent flexible semiconductor material. Recently, various amorphous transparent semiconductors such as IZO (In-Zn-O), GIZO, and HIZO (Hf-In-Zn-O) were developed. In this work, we examined the local structures of IZO, GIZO, and HIZO. The local coordination structure was investigated by the extended X-ray absorption fine structure. The IZO, GIZO and HIZO thin films ware deposited on the glass substrate with thickness of 400nm by the radio frequency sputtering method. The targets were prepared by the mixture of $In_2O_3$, ZnO and $HfO_2$ powders. The percent ratio of In:Zn in IZO, Ga:In:Zn in GIZO and Hf:In:Zn in HIZO was 45:55, 33:33:33 and 10:35:55, respectively. In this work, we found that IZO, GIZO and HIZO are all amorphous and have a similar local structure. Also, we obtained the bond distances of $d_{Ga-O}=1.85\;{\AA}$, $d_{Zn-O}=1.98\;{\AA}$, $d_{Hf-O}=2.08\;{\AA}$, $d_{In-O}=2.13\;{\AA}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.62-62
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• 2007

ZnO 박막이 성장된 Si기판을 이용하여 Thermal evaporation을 사용하여 온도에 따라 합성된 1-D의 구조의 ZnO nanorods의 형상과 특성에 대하여 연구를 하였다. 합성온도는 $700^{\circ}C{\sim}900^{\circ}C$를 사용하였고 온도가 낮아짐에 따라 Vertical한 1-D ZnO가 합성이 되는 것을 알 수 있었다. 특히, $700^{\circ}C$에서 합성된 1-D ZnO는 ~100nm의 폭을 가지고 800nm의 길이의 Nanorods로 성장이 되는 것을 알 수 있었고, 상온 PL측정을 통해 온도가 증가함에 따라 O 결핍 또는 Zn의 과잉에 의한 Deep level emission이 증가하는 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.108-109
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• 2006

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at $400^{\circ}C$ and their effect on the formation of ZnO nanorods at $300^{\circ}C$ was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

• 한국세라믹학회지
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• 제40권6호
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• pp.547-552
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• 2003

RF 마그네트론 스퍼터링법을 이용하여 유리기판위에 인가전력 100 W, 1.33Pa, Ar/O2=50 : 50, 20$0^{\circ}C$ 그리고 타겟과 기판사이의 거리 4 cm의 조건으로 ZnO 압전 박막을 성장시켰다. 증착된 박막의 결정성, 표면형상, 화학적 결합비와 전기적 특성을 XRD, SEM, AFM, RBS와 electrometer를 이용하여 측정 분석하였다 제조된 박막은 우수한 c축 우선 배향성을 보였고 또한 화학 양론적인 결합비를 나타내었다. 전극 구조가 single 및 double IDT를 갖는 ZnO/1DT/glass SAW 필터를 제작하여 특성을 분석한 결과, 전파속도는 각각 2,589 m/sec, 2,533 m/sec이었고, 삽입손실은 -11 dB과 -21 dB 값을 나타내어 박막형 SAW 필터로 응용이 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.551-554
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• 2000

The stability of $Pr_6$$O_{11}$-based ZnO varistors doped with $Y_2$$O_3$ was investigated under various d.c. stresses. The varistors were sintered at $1350^{\circ}C$ for 1h in the addition range of 0.0 to 4.0 mol% $Y_2$$O_3$. The varistors doped with $Y_2$$O_3$ exhibited much higher nonlinearity than that without $Y_2$$O_3$. In Particular, the varistors containing 0.5 mol% $Y_2$$O_3$ showed very excellent V-I characteristics, which the nonlinear exponent was 51.19 and the leakage current was 1.32 $\mu\textrm{A}$. And these varistors also showed an excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent were -0.80% and -2.17%, respectively, under 4th d.c. stress, such as (0.80 $V_ {1mA}$/$90^{\circ}C$/12h)+(0.85 $V_{1mA}$/$115^{\circ}C$/12h)+(0.90 $V_{1mA}$/$120^{\circ}C$/12h)+(0.95 $V_{1mA}$/$125^{\circ}C$/12h). Consequently, since $Pr_ 6$$O_{11}$-based ZnO varistors doped with 0.5 mol% $Y_2$$O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the superior varistors in future.

• 한국세라믹학회지
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• 제54권3호
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• pp.167-183
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• 2017

Zinc oxide (ZnO) is one of the most versatile semiconductors, and one-dimensional (1D) ZnO nanostructures have attracted significant interest for use in ultraviolet (UV) lasers, photochemical sensors, and photocatalysts, among other applications. It is known that 1D ZnO nanowires can be fabricated readily owing to the anisotropic growth of ZnO along the [0001] direction. However, this type of growth results in a decrease in the surface area of the (0001) plane, which plays a vital role not only in UV lasing but also in the photocatalytic process. Thus, we attempted to synthesize ZnO crystals with an increased polar surface area by controlling the crystal growth process. The purpose of this review is to propose a simple route for the synthesis of plate-like ZnO crystals with highly enhanced polar surfaces and to explore their feasibility for use in UV lasers as well as as a photocatalyst and antibacterial agent. In addition, we highlight the recent progress made in the pilot-scale synthesis of plate-like ZnO crystals for industrial applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.248-248
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• 2009

Recently, the control of size, morphology and dimensionality in inorganic materials has been rapidly developed into a promising field in materials chemistry. 3D nanostructured flower-like ZnO architecture with different size and shapes have been simply synthesized via a hydrothermal process, using zinc acetate and ammonium hydroxide as reactants.[1] In this study, the Zno thin-films were deposited by RF magnetron sputtering in other to get high adhesion and uniformity of 3D nanostructured flower-like ZnO architecture on a $SiO_2$ substrate. The XRD patterns identified that the obtained the nanocrystallized ZnO architecture exhibited a wurtzite structure. SEM images illustrated that the flower-like ZnO bundles consisted of flower-like or chestnut bur, which were characterized by polycrystalline and [0001] preferential orientation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.17-21
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• 2001

We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.

• 광물과 암석
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• 제34권2호
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• pp.107-120
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• 2021

검덕 연-아연 광상은 한반도에서 가장 규모가 큰 연-아연 광상으로 지체구조상 고원생대의 마천령층군이 포함된 Jiao Liao Ji belt내 혜산-리원 광화대에 위치한다. 이 광상의 주변지질은 고원생대의 마천리층군 변성퇴적암류와 이를 관입한 중생대의 만탑산 관입암체 및 신생대의 현무암으로 구성된다. 이 광상은 고원생대의 마천리층 변성퇴적암류내에 층상광체 및 맥상광체로 산출되며 퇴적분기형 광상에 해당된다. 이 광상에서 산출되는 돌로마이트들은 산출 광물조합 및 정출순서를 기초로 1)모암인 돌로마이트(D₀), 2)각섬암상의 변성작용에 의한 초기의 돌로마이트(투각섬석, 양기석, 투휘석, 섬아연석, 방연석 등)(D₁), 3)각섬암상의 변성작용에 의한 말기의 돌로마이트(활석, 방해석, 석영, 섬아연석, 방연석 등)(D₂), 4)석영맥과 함께 산출되는 돌로마이트(백색운모, 녹니석, 섬아연석, 방연석 등)(D₃)으로 산출된다. 이들 돌로마이트의 화학조성은 각각 Ca_1.00-1.20Mg_0.80-0.99Fe_0.00-0.01Zn_0.00-0.02(CO₃)₂(D₀), Ca_1.00-1.02M_0.97-0.99Fe_0.00-0.01Zn_0.00-0.02(CO₃)₂(D₁), Ca_0.99-1.03Mg_0.93-0.98Fe_0.01-0.05Mn_0.00-0.01As_0.00-0.01(CO₃)₂(D₂) 및 Ca_0.95-1.04Mg_0.59-0.68Fe_0.30-0.36Mn_0.00-0.01(CO₃)₂(D₃)로써 이론적인 돌로마이트의 화학조성보다 미량원소들의 함량이 높다. 이 미량원소들은 FeO, MnO, HfO₂, ZnO, PbO, Sb₂O₅ 및 As₂O₅ 원소들이며 광화작용이 진행됨에 따라 FeO, MnO, ZnO, Sb₂O₅ 및 As₂O₅ 원소들의 함량이 증감 변화가 있으나 HfO₂와 PbO 원소들의 함량은 증감 변화가 없다. 검덕광상의 D_o, D₁ 및 D₂는 Ferroan 돌로마이트에 해당되며 D₃는 Ferroan 돌로마이트와 철백운석(ankerite)에 해당된다. 따라서 1)모암인 돌로마이트(D₀)는 고원생대(2012~1700 Ma) 해양증발환경에서 실리카와 함께 퇴적된 후 계속적인 속성작용에 의해 돌로마이트화 작용에 의해 형성되었다. 2)초기의 돌로마이트(D₁)는 고원생대의 리원암군 관입(1890~1680 Ma)에 의한 변성작용(최소 각섬암상)에 의한 열수교대작용에 의해 형성되었다. 3)말기의 돌로마이트(D₂)는 각섬암상의 변성작용에 의한 계속적인 온도와 압력의 감소에 의해 잔존 유체로부터 형성되었다. 또한 4)석영맥의 돌로마이트(D₃)는 중생대의 만탑산 관입암체의 관입(213~181 Ma)에 의해 형성되었다.