• Journal of Advanced Navigation Technology
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• v.15 no.5
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• pp.789-794
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• 2011

This paper has analyzed the AM-AM and AM-PM characteristics of 7.9 GHz~8.4 GHz X-band TWT used for satellite communication and improved its linearity and IMD performance by using linearizer. The TWT amplifier with the linearizer shows better AM-AM and AM-PM conversion, and has increased 1 dB compression point by 12.3 dB and $2.0^{\circ}/dB$ phase distortion point by 10 dB. The 3rd order intermodulation distortion, IMD3 is measured to be 37.0 dBc that is 16.2 dB improvement at the operating output. This paper also proposed the measurement method of IMD for high power amplifier, and that TWT amplifier can have better linearity and output power by compensating for the AM-PM characteristics.

• ETRI Journal
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• v.46 no.2
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• pp.323-332
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• 2024

Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-㎛ GaAs pseudomorphic high-electron mobility transistor (pHEMT) process. The MFCs consist of four-channel radio frequency (RF) paths and a 4:1 combiner. Each channel provides several functions such as signal amplification, 6-bit phase shifting, and 5-bit attenuation with a 44-bit serial-to-parallel converter (SPC). RF pads are implemented on the bottom side of the chip to remove the parasitic inductance induced by wire bonding. The area of the fabricated chips is 5.2 mm × 4.2 mm. The receiver chip exhibits a gain of 18 dB and a noise figure of 2.0 dB over a frequency range from 17 GHz to 21 GHz with a low direct current (DC) power of 0.36 W. The transmitter chip provides a gain of 20 dB and a 1-dB gain compression point (P1dB) of 18.4 dBm over a frequency range from 28 GHz to 31 GHz with a low DC power of 0.85 W. The P1dB can be increased to 20.6 dBm at a higher bias of +4.5 V.

• ETRI Journal
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• v.33 no.5
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.8
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• pp.1392-1398
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• 2000

In this paper, Sub Harmonic Ring Mixer using Anti-Parallel Diode Pair is studied. Conventional mixers mix LO signal with RF signal and, obtain IF signal from the difference between LO and RF. Sub harmonic ring mixers using APDP mix RF signal with the second harmonic of LO signal, LO frequency needed for conventional receiver is reduced by 1/2.The produced mixer showed 12 dB conversion loss, and 1 dB compression point of IF signal, in respect to RF signal, was found at the 0 dBm RF signal. Isolation LO/IF and LO/RF is 24.6 dB and 22.5 dB respectively. Isolation RF/LO and LO/RF is 32.6 dB and 22.5 dB respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.1
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• pp.67-76
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• 2000

In this paper, a low noise amplifier has been developed, which is operating at L-band i.e., 1525-1575 MHz. By using resistive decoupling circuits, the resistor dissipates undesired signal in low frequency band. By adopting this design method the stability of the LNA is increased and the input impedance matching is improved. The LNA consists of the low noise GaAs FET ATF-10136 and the internally matched VNA-25. The low LNA is fabricated by both the RP circuit and the self-bias circuits in an aluminum housing. As a result, the characteristics of the LNA implemented show more than 32 dB in gain, lower than 0.5 dB in noise figure, 18.6 dBm output gain in 1 dB gain compression point.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.1
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• pp.77-88
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• 2000

In this paper, the 3-mode variable gain high power amplifier for a transmitter of INMARSAT-B operating at L-band(1626.5-1646.5 MHz) was developed. This SSPA can amplify 42 dBm in high power mode, 38 dBm in medium power mode and 36 dBm in low power mode for INMARSAT-B. The allowable errol sets +1 dBm as the upper limit and -2 dBm as the lower limit, respectively. To simplify the fabrication process, the whole system is designed by two parts composed of a driving amplifier and a high power amplifier. The HP's MGA-64135 and Motorola's MRF-6401 were used for driving amplifier, and the ERICSSON's PTE-10114 and PTF-10021 for the high power amplifier. The SSPA was fabricated by the RP circuits, the temperature compensation circuits and 3-mode variable gain control circuits and 20 dB parallel coupled-line directional coupler in aluminum housing. In addition, the gain control method was proposed by digital attenuator for 3-mode amplifier. Then il has been experimentally verified that the gain is controlled for single tone signal as well as two tone signals. In this case, the SSPA detects the output power by 20 dB parallel coupled-line directional coupler and phase non-splitter amplifier. The realized SSPA has 41.6 dB, 37.6 dB and 33.2 dB for small signal gain within 20 MHz bandwidth, and the VSWR of input and output port is less than 1.3:1. The minimum value of the 1 dB compression point gets more than 12 dBm for 3-mode variable gain high power amplifier. A typical two tone intermodulation point has 36.5 dBc maximum which is single carrier backed off 3 dB from 1 dB compression point. The maximum output power of 43 dBm was achieved at the 1636.5 MHz. These results reveal a high power of 20 Watt, which was the design target.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1046-1049
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• 2002

In this paper, a sub-harmonic dual-gate FET mixer for IMT-2000 base-station was designed by using single-gate FET cascode structure and driven by the second order harmonic component of LO signal. The dual-gate FET mixer has the characteristic of high conversion gain and good isolation between ports. Sub-harmonic mixing is frequently used to extend RF bandwidth for fixed LO frequency or to make LO frequency lower. Furthermore, the LO-to-RF isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer because the frequency separation between the RE and LO frequency is large. As RF power is -30dBm and LO power is 0dBm, the designed mixer shows the -47.17dBm LO-to-RF leakage power level, 10dB conversion gain, -0.5dBm OIP3, -10.5dBm IIP3 and -1dBm 1dB gain compression point.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.98-101
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• 2007

A fully integrated 5-GHz CMOS power amplifier for IEEE 802.11a WLAN applications is implemented using $0.18-{\mu}m$ CMOS technology. An on-chip transmission-line transformer is used for output matching network and voltage combining. Input balun, inter-stage matching components, output transmission line transformer and RF chokes are fully integrated in the designed amplifier so that no external components are required. The power amplifier occupies a total area of $1.7mm{\times}1.2mm$. At a 3.3-V supply voltage, the amplifier exhibits a 22.6-dBm output 1-dB compression point, 23.8-dBm saturated output power, 25-dB power gain. The measured power added efficiency (PAE) is 20.1 % at max. peak, 18.8% at P1dB. When 54 Mbps/64 QAM OFDM signal is applied, the PA delivers 12dBm of average power at the EVM of -25dB.

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.482-485
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• 2007

The S-Band SSPA is front-end equipment to transmit both LRIT and HRIT to COMS. To provide the required EIRP, S-Band SSPA is designed to generate maximum 1kW power at its 1dB gain compression point (P1dB). Due to the operation for 24 hours per seven days, the verification on the performance of S-Band SSPA was performed thoroughly. This paper presents that major requirements such as maximum 1kW power, maximum -26dBc of IMD characteristic at 500W output and around -57dBc of coupling factor were verified through proposed test configuration.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.69-78
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• 1999

In this paper, direct conversion receiver was designed to even harmonic anti-paralled diode pair ring mixer. Using a second harmonic component of LO instead of LO signal and RF signal are mixed by SHP(Sub Harmonic Pumped) mixer with anti-parallel diode pair. Canceling the harmonics of LO signal in ring mixer, SHP mixer using anti-parallel diode pair could mostly reduce the radiation of LO signal through a input port the most, good isolation characteristic, and low spurious characteristic by LO signal was shown over broad band. The produced SHP mixer showed LO/IF, RF/IF and LO/RF isolation was 24.6dB,36.2dB and 22.5dB respectively. And conversion loss was measured 15.6dB, IF output -35.6dBm with -20dBm RF input and 5.5dBm LO signal. 1dB compression point of If signal, in respect to RF signal, was found at the 0dbm RF signal.