• KEPCO Journal on Electric Power and Energy
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• v.6 no.2
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• pp.137-143
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• 2020

The CM247LC, a Ni-based superalloy material used for gas turbine hot gas path parts, is casted using directionally solidified technology to analyze the mechanical properties and microstructures through HIP (Hot Isostatic Pressing) and post-heat treatment, and to derive optimal HIP treatment conditions. The CM247LC material is being researched in various ways as an alternative material for prototyping gas turbine blades. In particular, the blade rotating part is exposed and operated in a high temperature and high-pressure environment, and when damaged, it may cause huge economic losses. Therefore, in order to use the CM247LC material as prototyping materials for gas turbine blades, the reliability of the microstructure and mechanical properties must be verified. In this study, after casting rod test specimens using CM247LC material by directionally solidified technology, after that the specimens were performed by HIP treatment and post-heat treatment to test two HIP conditions designed by KEPCO to derive the possibility of prototyping of CM247LC material and optimization of HIP treatment conditions. Additionally, the properties of CM247LC material were compared to the GTD111DS material using for 1,300℃ class gas turbine blades.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.178-184
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• 2010

The $12CaO{\cdot}7Al_2O_3$(C12A7) powders were successfully synthesized using combustion method with microwave-assistant and C12A7:H were fabricated by post-annealed process in Ar/H atmosphere. X-ray diffraction patterns and TGDSC were used for investigating to the precursors of crystalline and reaction depending on temperature. C12A7:H that was treated post-annealed process were investigated TG-MS and Hall-measurement for confirming H ions doping and checking electrical resistivity of C12A7:H. H ion substituted to $O^{2-}$ ions in the C12A7 cages were confirmed at $289.5^{\circ}C$ by TG-MS and C12A7:H calcined at $1000^{\circ}C$ in Ar/H=8:2 atmosphere for 8~10 h has low electrical resistivity about $10^2{\Omega}{\cdot}cm$ at room temperature.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.64-69
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• 2006

Cathode materials of Al-doped $Li(Ni_{1/3}Co_{1/3}Mn_{1/3-x}Al_x)O_2$ (x=0.0, 0.005, 0.01 0.05) for lithium ion batteries were synthesized with ultra-sonic spray pyrolysis method and single-step heat treatment. No secondary phases were found in all synthesized powders. The intensity ratio of $I_{003}\;to\;I_{104}$, however, slightly decreased and the particle size increased with the Al contents. The cells with bare, 0.5 and 1.0 at% Al-doped powders showed the initial discharge capacities of 182, 180 and $184mAhg^{-1}$ in a voltage range of $3.0\sim4.5V$ at 1C rate, and the capacity retentions of 81, 77 and 78% at the end of 30 cycles, respectively. But in the voltage range of $3.0\sim4.6V$, the Al-doping significantly enhanced the cycle stability. For example, the discharge capacity after 50 cycles was maintained to 70% in the 0.5 at% Al-doped sample compared to only 30% in no doped sample. The improvement of the cycle stability was thought to be due to $Mn^{3+}$ ion decrease as the Al doping from the XPS analysis results.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.33-42
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• 2009

A polymer-based flexible neural probe was fabricated for monitoring of neural activities from a brain. To improve the insertion stiffness, a 5 ${\mu}m$ thick biocompatible Au layer was electroplated between the top and bottom polymer layers. The developed neural probe penetrated a gel whose elastic modulus is similar to that of a live brain tissue without any fracture, To minimize mechanical residual stress and bending from the probe, two new methods were employed: (1) use of a thermal annealing process after completing the device and (2) incorporation of multiple different layers to compensate the residual stress between top and bottom layers. Mechanical bending around the probe tip was clearly removed after employing the two processes. In electrical test, the developed probe showed a proper impedance value to record neural signals from a brain and the result remained the same for 72 hours. In simple in-vitro probe characterization, the probe showed a great removal of residual stress and an excellent recording performance. The in-vitro recording results did not change even after 1 week, suggesting that this electrode has the potential for great recording from neuron firing and long-term implant performance.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.258-262
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• 2000

$YMnO_3$thin films are deposited on Si(100) and $Y_2O_3/Si(100)$ substrate by radio frequency sputtering. The deposition condition of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of $YMnO_3$film and the size of memory window. The results of x-ray diffraction show that the film deposited in the oxygen partial pressure of 0% is highly oriented along c-axis after annealing at $870^{\circ}C$ for 1 hr in oxygen ambient. However, the films deposited on Si and $Y_2O_3/Si$ in the oxygen partial pressures of 20% show $Y_2O_3$ peak, the excess $Y_2O_3$ in the $YMnO_3$film suppresses the c-axis oriented crystallization. Especially memory windows of the $Pt/YMnO_3/Y_2O_3/Si$ capacitor are 0.67~3.65 V at applied voltage of 2~12 V, which is 3 times higher than that of the film deposited on $Y_2O_3/Si$ in 20% oxygen (0.19~1.21 V) at the same gate voltage because the film deposited in 0% oxygen is well crystallized along c-axis.

• Korean Journal of Dental Materials
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• v.42 no.2
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• pp.95-106
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• 2015

Hardening mechanism associated with post-firing heat treatment of softening heat treated and then firing simulated Pd-Ag-Au alloy for bonding porcelain was examined by observing the change in hardness, crystal structure and microstructure. By post-firing heat treatment of as-cast, solution treated and pre-firing heat treated specimens at $650^{\circ}C$ after casting, the hardness value increased within 10 minutes. Then, hardness consistently increased until 30 minutes, and gap of hardness value among the specimens was reduced. The increase in hardness after post-firing heat treatment was caused by grain interior precipitation in the matrix. The softening heat treatment did not affect the increase in hardness by post-firing heat treatment. The precipitated phase from the parent Pd-Ag-Au-rich ${\alpha}$ phase with face-centered cubic structure by post-firing heat treatment was $Pd_3$(Sn, In) phase with face-centered tetragonal structure, which has lattice parameters of $a_{200}=4.0907{\AA}$, $c_{002}=3.745{\AA}$. From above results, appropriate post-firing heat treatment in order to support the hardness of Pd-Ag-Au metal substructure was expected to bring positive effects to durability of the prosthesis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.5
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• pp.211-216
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• 2018

The recovery of rare earth elements (REE) including La, Nd and Ce from spent batteries is important issues to reuse scarce resources. Herein, we present a simple recovery process to obtain lanthanum oxide ($La_2O_3$) from spent Ni-MH batteries, and demonstrate the conversion mechanism from $NaLa(SO_4)_2{\cdot}H_2O$ to $La_2O_3$. This strategy requires the initial preparation of $NaLa(SO_4)_2{\cdot}H_2O$ and subsequent metathesis reaction with $Na_2CO_3$ at $70^{\circ}C$. This metathesis reaction resulted in the crystalline lanthanum carbonate hydrate ($La_2(CO_3)_3{\cdot}xH_2O$) powder with plate-like morphology. On the basis of TGA result, the $La_2(CO_3)_3{\cdot}xH_2O$ powder was calcined in air at three different temperatures, that is, $300^{\circ}C$, $500^{\circ}C$, and $1000^{\circ}C$. As the calcination temperature increased, the morphology of powder was changed; prism-like ($NaLa(SO_4)_2{\cdot}H_2O$) ${\rightarrow}$ platelike ($La_2(CO_3)_3{\cdot}xH_2O$) ${\rightarrow}$ aggregated irregular shape ($La_2O_3$). Futhermore, XRD results indicated that the crystalline $La_2O_3$ could be synthesized after the metathesis reaction with $Na_2CO_3$, followed by heat-treatment at $1000^{\circ}C$, along with a change of crystallographic structures; $NaLa(SO_4)_2{\cdot}H_2O$ ${\rightarrow}$ $La_2(CO_3)_3{\cdot}xH_2O$ ${\rightarrow}$ $La_2O_3$.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.599-604
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• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.42-49
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• 2011

We deposited $SiN_x$ thin films by using PECVD technique at $200^{\circ}C$ with various flow ratios of the $SiH_4/N_2$ gases. The photoluminescence measurements revealed that the maximum emission wavelength shifted to long wavelength as the ratio increased, however, positions of the several peak wavelengths, such as 1.9, 2.2, 2.4, and 3.1 eV, were independent on the ratio. Changes of the photoluminescence spectra were measured in the $N_{2}-$, $H_{2}-$, and $O_2$-annealed films. The luminescence intensities increased after the annealing process. In particular, the maximum emission wavelength shifted to short wavelength after $H_{2}-$ or $O_2$-annealing. But there were still several peaks on the spectra of all annealed films, several peak positions remained to be unchanged after the annealing. As for the light emission mechanism, we have considered the defect states of the Si- and N- dangling bonds in the $SiN_x$ energy gap, so that the energy transitions from/to the conduction/valence bands and the defect states in the gap were attributed to the light emission in the $SiN_x$ films. The experimental results point to the possibility of a Si-based light emission materials for flexible Si-based electro-optic devices.