• Tribology and Lubricants
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• v.25 no.5
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• pp.342-347
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• 2009

This paper presents EHL analysis for rough surfaces with directional roughness. Three different types of surfaces with pure longitudinal roughness, pure transversal roughness and isotropic roughness are generated. For the surfaces with longitudinal and transversal roughness, two cases are analyzed; one is a case of asperity peak on a spherical contact center, the other one is of valley on a spherical contact center. As a results, the surface with pure transversal roughness gives higher pressure and smaller minimum film thickness than the surface with pure longitudinal roughness, and the surface with isotropic roughness has similar EHL behavior with the surface with pure transversal roughness.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.5
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• pp.917-922
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• 2009

This paper presents a technique to generate road surface profiles in a spatial domain using a power spectral density function. A single track power spectral density function is proposed to describe a road surface profile, which is also applicable for multi-track vehicle response analysis. The roads in lateral direction makes the relation between the coherence of the lateral tracks. The derived road surfaces are compared to ISO(International Organization for Standardization) standards. Generated road profiles are in good agreements with the target road PSD shape and measured coherence relation.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.364-371
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• 1997

Silicon trench etching has been carried out using a magnetically enhanced reactive ion etching system in HBr plasma containing He-$O_2$, $CF_4$. The changes of etch rate and etch profile, the degree of residue formation, and the change of surface chemical state were investigated as a function of additive gas flow rate. A severe lateral etching was observed when pure HBr plasma was used to etch the silicon, resulted in a pot shaped trench. When He-$O_2$, $SiF_4$ additives were added to HBr plasma, the lateral etching was almost eliminated and a better trench etch profile was obtained. The surface etched in HBr/He-$O_2/SiF_4$ plasma showed relatively low contamination and residue elements compared to the surface etched in HBr/He-$O-2/CF_4$plasma. In addition, the etching characteristics including low residue formation and chemically clean etched surface were obtained by using HBr containing He-$O_2$ or $SiF_4$ additive gases instead of $CF_4$ gas, which were confirmed by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM).