• Title/Summary/Keyword: 화합물 반도체

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Synthesis and Characterization of Magnetic Core-shell ZnFe2O4@ZnO@SiO2 Nanoparticles (Magnetic Core-shell ZnFe2O4@ZnO@SiO2 Nanoparticle의 합성과 성질에 관한 연구)

  • Yoo, Jeong-Yeol;Lee, Young-Ki;Kim, Jong-Gyu
    • Journal of the Korean Chemical Society
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    • v.59 no.5
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    • pp.397-406
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    • 2015
  • ZnO, II-VI group inorganic compound semi-conductor, has been receiving much attention due to its wide applications in various fields. Since the ZnO has 3.37 eV of a wide band gap and 60 meV of big excitation binding energy, it is well-known material for various uses such the optical property, a semi-conductor, magnetism, antibiosis, photocatalyst, etc. When applied in the field of photocatalyst, many research studies have been actively conducted regarding magnetic materials and the core-shell structure to take on the need of recycling used materials. In this paper, magnetic core-shell ZnFe2O4@SiO2 nanoparticles (NPs) have been successfully synthesized through three steps. In order to analyze the structural characteristics of the synthesized substances, X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared spectroscopy (FT-IR) were used. The spinel structure of ZnFe2O4 and the wurtzite structure of ZnO were confirmed by XRD, and ZnO production rate was confirmed through the analysis of different concentrations of the precursors. The surface change of the synthesized materials was confirmed by SEM. The formation of SiO2 layer and the synthesis of ZnFe2O4@ZnO@SiO2 NPs were finally verified through the bond of Fe-O, Zn-O and Si-O-Si by FT-IR. The magnetic property of the synthesized materials was analyzed through the vibrating sample magnetometer (VSM). The increase and decrease in the magnetism were respectively confirmed by the results of the formed ZnO and SiO2 layer. The photocatalysis effect of the synthesized ZnFe2O4 @ZnO@SiO2 NPs was experimented in a black box (dark room) using methylene blue (MB) under UV irradiation.

Optical properties of $ZnIn_2Se$ and $ZnIn_2Se_4$:Co single crystals ($ZnIn_2Se_4$$ZnIn_2Se_4$:Co 단결정의 광학적 특성)

  • 최성휴;방태환;박복남
    • Journal of the Korean Vacuum Society
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    • v.6 no.2
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    • pp.129-135
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    • 1997
  • Undoped and Co-doped $ZnIn_2Se_4$ single crystals crystallized in the tetragonal space group 142m, with lattice constants a=5.748 $\AA$ and c=11.475 $\AA$, and a=5.567 $\AA$ and c=11.401 $\AA$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had an indirect band gap, the direct and the indirect energy gaps of these compounds decreased as temperature changed from 10 to 300 K. The temperature coefficients of the direct energy gaps were found to be $\alpha=3.71\times10^{-4}$eV/K and $\beta$=519 K for $\alpha=3.71\times10^{-4}$eV/K and $\beta$=421K for $ZnIn_2Se_4$: Co. The temperature coefficients of the indirect energy gaps were also found to be $\alpha=2.31\times10^{-4}$ eV/K and $\beta$=285 K for $ZnIn_2Se_4$, and $\alpha=3.71\times10^{-4}$eV/K and $\beta$=609 K for $ZnIn_2Se_4$:Co, respectively. Six impurity optical absorption peaks due to cobalt are observed in $ZnIn_2Se_4$:Co single crystal. These impurity optical absorption peaks can be attibuted to the electronic transitions between the split energy levels of$CO^{2+}$ ions located at Td symmetry site of $ZnIn_2Se_4$ host lattice. The 1st order spin-orbit coupling constant ($\lambda$), Racah parameter (B), and crystal field parameter (Dq) ARE GIVEN AS -$243\textrm{cm}^{-1}, 587\textrm{cm}^{-1}, \;and\;327\textrm{cm}^{-1}$, respectively.

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극성 (0001) 및 반극성 (11-22) n-ZnO/p-GaN 이종접합 발광 다이오드의 광전 특성 분석에 대한 연구

  • Choe, Nak-Jeong;Lee, Jae-Hwan;Han, Sang-Hyeon;Son, Hyo-Su;Lee, Seong-Nam
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.310-310
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    • 2014
  • ZnO박막은 넓은 밴드갭 (3.37 eV), 높은 여기 결합 에너지 (60 meV)를 가지는 육방정계 우르자이트(hexagonal wurtzite) 결정구조를 가지는 II-VI족 화합물 반도체로, 가시광선 영역에서의 높은 광학적 투과도 특성과 자외선 파장에서 발광이 가능한 장점을 가진다. 최근, ZnO박막 성장 기술이 상당히 발전하였지만, 아직까지도 p-형 ZnO박막 성장 기술은 충분히 발전하지 못하여 ZnO의 동종접합 LED는 아직 상용화되지 않고 있는 실정이다. 따라서, 많은 연구 그룹에서 p-GaN, p-SiC, p-diamond, p-Si 등과 같은 p-type 물질 위에 n-type ZnO를 성장시킨 이종접합 다이오드가 연구되고 있다. 특히, p-GaN의 경우 ZnO와의 격자 불일치 정도가 1.8 % 정도로 작다는 장점이 있어 많은 연구가 이루어 지고 있다. 일반적으로 c-축을 기반으로 한 극성ZnO 발광다이오드에서는 자발 분극과 압전 분극 현상에 의해 밴드 휨 현상이 발생하고, 이로 인해 전자와 정공의 공간적 분리가 발생하게 되어 발광 재결합 효율이 제한되고 있다는 문제가 발생한다. 따라서, 본 연구에서는 극성 (0001) 및 비극성 (10-10) n-ZnO/p-GaN 발광다이오드의 성장 및 발광 소자의 전기 및 광학적 특성에 대한 비교 연구를 진행하였다. 금속유기 화학증착법을 이용하여 c-면과 m-면 위에 각각 극성 (0001) 및 반극성 (11-22) GaN박막을 $2.0{\mu}m$ 성장시킨 후 Mg 도핑을 한 p-GaN을 $0.4{\mu}m$ 성장시켜 각각 극성 (0001) 및 반극성 (11-22) p-GaN템플릿을 준비하였다. 이후, N2분위기 $700^{\circ}C$에서 3분동안 열처리를 통하여 Mg 도펀트를 활성화시킨 후 원자층 증착법을 이용하여 동시에 극성 및 반극성 p-GaN의 위에 n-ZnO를 $0.11{\mu}m$ 성장시켜 이종접합구조의 발광소자를 형성하였다. 이때, 극성 (0001) p-GaN 위에는 극성의 n-ZnO 박막이 성장되는 반면, 반극성 (11-22) p-GaN 위에는 비극성 (10-10) n-ZnO 박막이 성장됨을 HR-XRD로 확인하였다. 극성 (0001) n-ZnO/p-GaN이종접합 발광다이오드의 전계 발광 스펙트럼에서는 430 nm 와 550 nm의 두 피크가 동시에 관찰되었다. 430 nm 대역의 파장은 p-GaN의 깊은 준위에서 발광하는 것으로 판단되며, 550 nm 피크 영역은 ZnO의 깊은 준위에서 발광되는 것으로 판단된다. 특히, 10 mA 이하의 저전류 주입시 550 nm의 피크는 430 nm 영역보다 더 큰 발광세기를 나타내고 있다. 하지만, 10 mA 이상의 전류주입 하에서는 550 nm의 영역보다 430 nm의 발광세기가 더욱 증가하는 것을 확인할 수 있었다. 이것은 ZnO의 밴드갭이 3.37 eV로 GaN의 밴드갭인 3.4 eV다 작기 때문에 우선적으로 ZnO의 깊은 준위에서 발광하는 550 nm가 더욱 우세하지만, 지속적으로 전류주입 증가에 따른 캐리어 증가시 n-ZnO에서 p-GaN로 전자가 넘어가며 p-GaN의 깊은 준위인 430 nm에서의 피크가 우세해지는 것으로 판단된다. 반면에, 비극성 (10-10) n-ZnO/반극성 (11-22) p-GaN 구조의 이종접합 발광다이오드로 전계 발광 스펙트럼에서는 극성 (0001) n-ZnO/p-GaN에 비하여 매우 낮은 전계 발광 세기를 나타내고 있다. 이는, 극성 n-ZnO/p-GaN에 비하여 비극성 n-ZnO/반극성 p-GaN의 결정성이 상대적으로 낮기 때문으로 판단된다. 또한, 20 mA 영역에서도 510 nm의 깊은 준위와 430 nm의 발광이 관찰되었다. 동일한 20 mA하에서 두 피크의 발광세기를 비교하면 430 nm의 영역은 극성 n-ZnO/p-GaN에 비하여 매우 낮은 값을 나타내고 있다. 이는 반극성 (11-22) p-GaN의 경우 극성 (0001) p-GaN에 비하여 우수한 p-형 특성에 기인한 것으로 판단된다.

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Artificial diminution of the residual pesticides on horticultural crops using photosensitizers (감광제에 의한 원예작물중 잔류농약의 인위적 경감)

  • Lee, Jae-Koo;Kwon, Jeong-Wook;Ahn, Ki-Chang;Park, Ju-Hyoung;Lee, Jun-Su;Park, Jung-Ok
    • The Korean Journal of Pesticide Science
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    • v.3 no.2
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    • pp.47-53
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    • 1999
  • Photosensitizing activities of some photosensitizers (PS) for the artificial diminution of pesticide residues on horticultural crops were investigated. Five fungicides, iprodione, bitertanol, chlorothalonil, myclobutanil, and dichlofluanid were sprayed on apple and cucumber, followed by the application of each selected photosensitizer, and the samples were collected 0, 1, 3, 7, 15 days after the photosensitizer application and analyzed for the residual amounts. Of the 40 photosensitizers tested, six selected on the basis of the eliminating effect of pesticide residues were PS-1 (aromatic ketone), PS-2 (aromatic amine), PS-3 (quinone), PS-4 (inorganic compound), PS-5 (organic acid salt), and PS-6 (semiconductor photocatalyst). The residual amount of iprodione after 15 days of the application of PS-1 was 74% of that of the control. For bitertanol, the residual amount after 15 days of the application of PS-1 accounted for 78% of that of the control. The residual amounts of chlorothalonil after 1 day of the application of PS-1 and PS-2 accounted for 56 and 54% of those of the control, respectively. The residual amounts of iprodione on cucumber after 3 days of the application of the photosensitizers PS-1 and PS-2 were 44 and 67% of those of the untreated control, respectively. For myclobutanil, the residual amount after 15 days of the application of PS-6 accounted for 45% of that of the control. In case of dichlofluanid, the residual amount after 3 days of the application of PS-1 accounted for 44% of that of the control. Based on the results, PS-1 turned out to be the most promising photosensitizer for the accelerated photodegradation of the above fungicides on apple and cucumber.

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Annealing Effect on Magnetic and Electrical Properties of Amorphous Ge1-xMnx Thin Films (비정질 Ge1-xMnx 박막의 전기적, 자기적 특성에 미치는 열처리 효과)

  • Lee, Byeong-Cheol;Kim, Dong-Hwi;Anh, Tran Thi Lan;Ihm, Young-Eon;Kim, Do-Jin;Kim, Hyo-Jin;Yu, Sang-Soo;Baek, Kui-Jong;Kim, Chang-Soo
    • Journal of the Korean Magnetics Society
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    • v.19 no.3
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    • pp.89-93
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    • 2009
  • Amorphous $Ge_{1-x}Mn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were $1,000{\sim}5,000\;{\AA}$ thick. Amorphous $Ge_{1-x}Mn_x$ thin films were annealed at $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown $Ge_{1-x}Mn_x$ semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous $Ge_{1-x}Mn_x$ semiconductor thin films varies with Mn concentration. Amorphous $Ge_{1-x}Mn_x$ thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous $Ge_{1-x}Mn_x$ thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed $Ge_{1-x}Mn_x$ thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic $Ge_3Mn_5$ phase causes the change of magnetic and electrical properties of annealed $Ge_{1-x}Mn_x$ thin films.

Reliability Assessment of Flexible InGaP/GaAs Double-Junction Solar Module Using Experimental and Numerical Analysis (유연 InGaP/GaAs 2중 접합 태양전지 모듈의 신뢰성 확보를 위한 실험 및 수치 해석 연구)

  • Kim, Youngil;Le, Xuan Luc;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.75-82
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    • 2019
  • Flexible solar cells have attracted enormous attention in recent years due to their wide applications such as portable batteries, wearable devices, robotics, drones, and airplanes. In particular, the demands of the flexible silicon and compound semiconductor solar cells with high efficiency and high reliability keep increasing. In this study, we fabricated a flexible InGaP/GaAs double-junction solar module. Then, the effects of the wind speed and ambient temperature on the operating temperature of the solar cell were analyzed with the numerical simulation. The temperature distributions of the solar modules were analyzed for three different wind speeds of 0 m/s, 2.5 m/s, and 5 m/s, and two different ambient temperature conditions of 25℃ and 33℃. The flexibility of the flexible solar module was also evaluated with the bending tests and numerical bending simulation. When the wind speed was 0 m/s at 25 ℃, the maximum temperature of the solar cell was reached to be 149.7℃. When the wind speed was increased to 2.5 m/s, the temperature of the solar cell was reduced to 66.2℃. In case of the wind speed of 5 m/s, the temperature of the solar cell dropped sharply to 48.3℃. Ambient temperature also influenced the operating temperature of the solar cell. When the ambient temperature increased to 33℃ at 2.5 m/s, the temperature of the solar cell slightly increased to 74.2℃ indicating that the most important parameter affecting the temperature of the solar cell was heat dissipation due to wind speed. Since the maximum temperatures of the solar cell are lower than the glass transition temperatures of the materials used, the chances of thermal deformation and degradation of the module will be very low. The flexible solar module can be bent to a bending radius of 7 mm showing relatively good bending capability. Neutral plane analysis was also indicated that the flexibility of the solar module can be further improved by locating the solar cell in the neutral plane.

Identifying Bridging Nodes and Their Essentiality in the Protein-Protein Interaction Networks (단백질 상호작용 네트워크에서 연결노드 추출과 그 중요도 측정)

  • Ahn, Myoung-Sang;Ko, Jeong-Hwan;Yoo, Jae-Soo;Cho, Wan-Sup
    • Journal of Korea Society of Industrial Information Systems
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    • v.12 no.5
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    • pp.1-13
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    • 2007
  • In this research, we found out that bridging nodes have great effect on the robustness of protein-protein interaction networks. Until now, many researchers have focused on node's degree as node's essentiality. Hub nodes in the scale-free network are very essential in the network robustness. Some researchers have tried to relate node's essentiality with node's betweenness centrality. These approaches with betweenness centrality are reasonable but there is a positive relation between node's degree and betweenness centrality value. So, there are no differences between two approaches. We first define a bridging node as the node with low connectivity and high betweenness value, we then verify that such a bridging node is a primary factor in the network robustness. For a biological network database from Internet, we demonstrate that the removal of bridging nodes defragment an entire network severally and the importance of the bridging nodes in the network robustness.

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