• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.310-316
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• 1995

We designed the $1.3/1.55\mum$ WDM directional coupler and its coupling length was calculated with the variation of the two waveguide's core separation and other variables by the Fourier transformed scalar wave equation. We deposited the PSG films for optical waveguide by low pressure chemical vapor deposition and fabricated the WDM coupler using the laser lithography and $CF_4/O_2$ reactive ion etching process. A V -groove which was made to support and fix the optical fiber is fabricated on Si substrate by chemical etching. The WDM coupler and the V-groove are connected using UV curing epoxy. We found that propagation mode of each port of WDM coupler is single mode and maximum extinction ratio between two out ports is 6 dB for $1.3.\mum$, and 12 dB for $1.55\mum$. /TEX>.

• Composites Research
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• v.28 no.4
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• pp.239-243
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• 2015

Recent studies regarding the properties of carbon nanotubes (CNT) have made remarkable progress in CNT fibers research. However no CNT fibers showed the properties of CNTs because CNTs in fibers have weak interfacial bonding with low shear modulus in the pristine form. Thus, it is upmost interest to develop and employ post-production treatments to the CNT fibers that would potentially improve their properties. In this study, post-treatments resulted in improvement of strength of CNT fibers up to 40%.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.317-322
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• 1998

The stabilization of low dielectric constant SiOF films prepared by conventional PECVD using TEOS and $C_2F_6$ was evaluated by the $N_2O$-plasma post-deposition annealing. Properties of SiOF film became unstable when it was air-exposed or heat-treated. Water absorption of SiOF films was increased as F content was increased due to the for¬mation of F -Si- F bonds. Also F content of SiOF films decreased after heat treatment. $N_2O$-plasma post-deposition annealing was proved to be effective on stabilizing SiOF films. which was mainly due to the formation of thin SiON layer near the top surface of films. However. the value of dielectric constant was greatly increased again when $N_2O$-plasma post-deposition annealing was done for a long time. To stabilize the SiOF films without an increase of dielec¬tric constant by $N_2O$- plasma post-deposition annealing. the annealing time should be kept the minimum value. to which stabilizing effects against air environment and heat treatment were preserved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.4
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• pp.125-131
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• 2023

Ga₂O₃ thin films were deposited on Ti substrates using metal organic chemical vapor deposition (MOCVD) at temperatures ranging from 350 to 500℃. Lower deposition temperatures were chosen to minimize thermal deformation of the Ti substrate and its impact on the Ga₂O₃ film. Film surfaces tended to become rough at temperatures below 500℃ due to three-dimensional growth, but the film formed at 500℃ had the most uniform surface. All deposited films were amorphous in structure. Vertical Schottky diodes were fabricated and I-V and C-V measurements were performed. I-V measurements showed higher operating voltages compared to a typical SBD for films grown at different temperatures. The sample grown at 500℃, which had the most uniform surface, exhibited the lowest operating voltage. Higher growth temperatures resulted in higher capacitance values according to C-V measurements.

• Korean Journal of Materials Research
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• v.7 no.3
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• pp.175-179
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• 1997

bliniaturization oi microwave circuit components is an important issue with the development in the mobile communication. Capacitors, inductors anti hybrid devices of these are building blocks of electric circuits, and the fabrication of these devices using thin film technology will influence on the miniaturization of electronic devices In this paper, we report the successful fabrication of the inductors, capacitors and LC hybrid devices using a ferroelectric and a ferromagnetic oxide thin iilm. Au, stable at high temperatures in oxidizing ambient, is patterned by lift-off process, and oxide thin films are deposited by ion beam sputtering and chemical vapor deposition. These devices are characterized by a network analyzer in 0.5-15GtIz range We got the inductance of 5nH, capacitance oi 10, 000 pF and resonant frequencies of $10^{6}-10^{9}Hz$.

• Membrane Journal
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• v.14 no.3
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• pp.201-206
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• 2004

The stability of the prepared silica membrane by chemical vapor deposition (CVD) method in the HI-$H_2O$ gaseous mixture was evaluated aiming at the application for hydrogen iodide decomposition in the thermochemical IS process. Porous $\alpha$-alumina having pore size of 100 nm was modified by the different CVD temperature using tetraethoxysilane as the Si source. The CVD temperature was $700^{\circ}C$, $650^{\circ}C$, and $600^{\circ}C$. The $H_2$/H$_2$ selectivities of the modified membranes which were measured by single-component permeation experiment showed 43.2, 12.6, and 8.7 at $600^{\circ}C$ for the M1 (CVD temperature was $700^{\circ}C$), M2 (CVD temperature was $650^{\circ}C$) and M3 membranes (CVD temperature was $600^{\circ}C$), respectively. Stability experiment in the HI-$H_2O$ gaseous mixture was carried out at $450^{\circ}C$. The prepared silica membrane at $600^{\circ}C$ of CVD temperature was more stable than that at the other CVD temperature.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.67-72
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• 2008

We have studied the effect of heat treatment of multi-walled carbon nanotubes (MWNTs) as a counter electrode on the electro-chemical properties of dye-snsitized solar cells. MWNTs on the p-type Si substrate were synthesized by thermal chemical vapor deposition (CVD) using Fe catalysts. We prepared the two types of MWNTs samples with the different diameters. The rapid thermal annealing (RTA) treatment for the MWNTs was carried out at the growth temperature ($900^{\circ}C$) for 1 minute with $N_2$ gas atmosphere. The structural, electrical and electrochemical properties of MWNTs were investigated by field-emission scanning electron microscopy (FE-SEM), Raman spectroscopy, 2-point probe station and electrochemical impedance spectroscopy (EIS). The I(D)/I(G) ratio of heat-treated MWNTs in Raman spectra was considerably decreased. It was also found that the heat-treated MWNTs showed better redox reaction of iodide at the interface between MWNTs surface and electrolyte than that of as-grown MWNTs. The redox resistance value of heat-treated electrodes was measured to be much lower than that of as-grown electrode at the interface. As a result, the counter electrode using the heat-treated MWNTs showed better electrochemical properties.

• Journal of the Korean Electrochemical Society
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• v.12 no.2
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• pp.189-195
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• 2009

$\beta-Ga_{2}O_{3}$ nanorods were synthesized by chemical vapor deposition method using nickel-oxide nanoparticle as a catalyst and gallium metal powder as a source material. The average diameter of nanorods was around 160 nm and the average length was $4{\mu}m$. Also, we confirmed that the synthesis of nanorods follows the vapor-solid growth mechanism. From the results of X-ray diffraction and HR-TEM observation, it can be found that the synthesized nanorods consisted of a typical core-shell structure with single-crystalline $\beta-Ga_{2}O_{3}$ core with a monoclinic crystal structure and an outer amorphous gallium oxide layer. Li/$\beta-Ga_{2}O_{3}$ nanorods cell delivered capacity of 867 mAh/g-$\beta-Ga_{2}O_{3}$ at first discharge. Although the Li/$\beta-Ga_{2}O_{3}$ nanorods cell showed low coulombic efficiency at first cycle, the cell exhibited stable cycle life property after fifth cycle.

• Journal of Hydrogen and New Energy
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• v.22 no.3
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• pp.380-385
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• 2011

$MgH_2$ was synthesized by hydriding chemical vapor deposition (HCVD). In this study, we examined the hydrogen storage property of $MgH_2$ synthesized by HCVD. The results of pressure-composition-temperature (PCT) measurement showed that the HCVDed $MgH_2$ reversibly absorbed hydrogen as much as 6 wt%. Each hydrogenation rate was very greater than the conventional alloy methods. The reason was that the particle size made by HCVD was small as approximately 1 ${\mu}m$. The PCT of $MgH_2$ made by HCVD methode was similar to a commercial $MgH_2$. The ${\Delta}H$ and ${\Delta}S$ value are respectively -76.8 $kJ/mol{\cdot}H_2$ and -137.4 $kJ/mol{\cdot}H_2$. Mg made by HCVD methode was activated easily than commercial Mg. Also the initial reaction rate was faster than that of commercial $MgH_2$. 70% of the total storage were stored during 400s.

• Journal of Korean Society of Environmental Engineers
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• v.34 no.10
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• pp.702-708
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• 2012

Tetrafluoromethane ($CF_4$) has been used as etching and Chemical Vapor Deposition (CVD) gases for semiconductor manufacturing processes. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetimes which cause the global warming effect. Also, the wastewater including the fluorine is caused by of the ground water pollution. Long-term consumption of water containing excessive fluoride can lead to fluorosis of the teeth and bones. The wastewater including the fluorine among the by-product which is generated by using the waterjet plasma after destroying $CF_4$ by HF is generated. The system which can remove the hydrogen fluoride among the wastewater by using the electrocoagulation using this wastewater the aluminum electrode was developed. The operating condition such as initial pH, electrocoagulation time, wastewater flow rate, current density were investigated experimentally using a electrocoagulation. Through the parametric studies, the highest hydrogen fluoride destruction of 85% was achieved at 3.5 initial pH, 10 min electrocoagulation time, 10 mL/min wastewater flow rate and $159A/m^2$ current density.