• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.79-80
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• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing (CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical planarization/polishing (ECMP) or electro-chemical mechanical planarization was introduced to solve the. technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1175-1180
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• 2022

STI has been studied a lot as a process technology for wide area planarization according to miniaturization and high integration of semiconductor devices. In this study, as methods for improving the STI profile, wet etching of pad oxide using hydrofluorine solution and dry etching of O₂+CF₄ after STI dry etching were proposed. This process technology showed improvement in profile imbalance and leakage current between patterns according to device density compared to the conventional method. In addition, as a result of measuring the HLD thickness after CMP for a device having the same STI depth and HLD deposition, the measured value was different depending on the device density. It was confirmed that this was due to the difference in the thickness of the nitride film according to the device density after CMP and the selectivity of the slurry.

• Korean Journal of Optics and Photonics
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• v.33 no.2
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• pp.74-83
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• 2022

The entire process, from the raw material to the final system qualification test, has been developed to fabricate a large-diameter, lightweight reflective-telescope system for a satellite observation. The telescope with 3 anastigmatic mirrors has an aperture of 700 mm and a total mass of 66 kg. We baked a silicon carbide substrate body from a carbon preform using a reaction sintering method, and tested the structural and chemical properties, surface conditions, and crystal structure of the body. We developed the polishing and coating methods considering the mechanical and chemical properties of the silicon carbide (SiC) body, and we utilized a chemical-vapor-deposition method to deposit a dense SiC thin film more than 170 ㎛ thick on the mirror's surface, to preserve a highly reflective surface with excellent optical performance. After we made the SiC mirrors, we measured the wave-front error for various optical fields by assembling and aligning three mirrors and support structures. We conducted major space-environment tests for the components and final assembly by temperature-cycling tests and vibration-shock tests, in accordance with the qualifications for the space and launch environment. We confirmed that the final telescope achieves all of the target performance criteria.

• Korean Chemical Engineering Research
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• v.51 no.5
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• pp.622-627
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• 2013

Colloidal silica is used in various industrial products such as chemical mechanical polishing slurry for planarization of silicon and sapphire wafer, organic-inorganic hybrid coatings, binder of investment casting, etc. An accurate determination of particle size and dispersion stability of silica sol is demanded because it has a strong influence on surface of wafer, film of coatings or bulks having mechanical, chemical and optical properties. The study herein is discussed on the effect of measurement results of average particle size, sol viscosity and electrophoretic mobility of particle according to the volume fraction of eight types of silica sol with different size and surface properties of silica particles which are presented by the manufacturer. The measured particle size and the mobility of these sol were changed by volume fraction or particle size due to highly active surface of silica particle and change of concentration of counter ion by dilution of silica sol. While in case the measured sizes of small particles less than 60 nm are increased with increasing volume fraction, the measured sizes of larger particles than 60 nm are slightly decreased. The mobility of small particle such as 12 nm are decreased with increase of viscosity. However, the mobility of 100 nm particles under 0.048 volume fraction are increased with increasing volume fraction and then decreased over higher volume fraction.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.29-29
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• 2002

공구강 등 산업용 재료로 널리 사용되는 카바이드 계 재료는 입자 크기 및 분포에 따라 기계적 성질이 변화하므로, 이를 제어하고 조절하는 기술에 관하여 많은 연구가 진행되어 왔다. 본 연구에서는 TiCN-WC-Co 복합초경계 에서 소결 공정 및 조성변화에 따른 입자 모양을 관찰하고 이에 따른 업자 성장 거동을 고찰하였다. 일반적으로 입자 조대화 양상과 고상 입자의 모양과는 밀접한 관계가 있다. 각진 입자의 경우에 는 계면이 원자적으로 singular 하여 원자의 홉착이 어렵기 때문에 임계값 이상의 성장 구동력을 받 는 몇몇 입자만 성장하는 비정상 입자 성장이 일어날 수 있다. 반면에 계면이 rough한 퉁큰 엽자의 경우에는 원자 홉착에 필요한 구동력이 존재하지 않아 성장 구동력을 받는 모든 입자들이 성장하기 때문에 정상 입자 성장을 하게 된다. 이와 같이 입자 모양에 따른 입자 성장 거동은 전체 미세구조를 결정하게 되며, 이에 따른 물리 화학적 물성을 변화시킨다. 이러한 입자 성장 원리를 적용하 면 복합초경계 (TiCN-WC-Co)에서도 입자성장이 억제되고 치밀한 소결체를 제조할 수 있을 것이다. 본 실험에서는 평균입도가 각각 0.1, 1.33, 2$\mu\textrm{m}$인 TiCN, WC, Co 분말을 사용하여 $((I00_{-x)}TiCN+_xWC)-30Co$ (wt%) 조성에서 TiCN/WC 비를 변화시키면서 업자 모양과 입자성장 거동을 관찰하였다. 청량된 분말은 WC 초경 볼로 밀렁하고, 건조한 후, 100 mesh 체로 조립화 하였다. 이 분말을 100 MPa의 압력으로 냉간정수압성형 하고 $10^{-2}$ torr의 진공분위기의 graphite f furnace에서 carbon black으로 packing 하여 액상형성 온도 이상에서 소결하였다. 소결된 시편은 경면 연마하여 주사전자현미경으로 미세 조직을 관찰하였다. TiCN-30Co 조성 시편은 corner-round 모양의 입자 모양으로 소결 시간 증가에 따라 빠른 입자 성장을 나타내었다 .(7STiCN+2SWC)-30Co 조성 시변의 경우 일반적으로 보고된 바와 같이 core/shell 구조를 나타내었으며, core는 TiC-rich 상이었고, shell은 (Ti,W)(C,N) 복합 탄화물 상이었다. WC 함량이 중가함에 따라 입자의 corner-round 영역이 증가하였으며 (SOTiCN-SOWC)-30Co 조성 근처에서는 거의 둥근 형태의 입자 모양을 나타내었다. 또한 TiCN - 30Co 조성 시편에 비하여 WC가 첨가된 시펀들은 작은 평균입자크기를 나타내었다. 본 연구의 결과는 shell 영역 조성 변화는 계면에너지 이방성과 기지상 내의 펑형 입자 모양을 변화시키고 나아가 입자 성장 속도 에도 영향을 미친다는 것을 보여준다.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.

• The Journal of Korean Academy of Prosthodontics
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• v.61 no.3
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• pp.179-188
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• 2023

Purpose. The purpose of this study was to evaluate the effect of surface treatments on the shear bond strength of two types of zirconia (3-TZP and 5Y-PSZ) with resin cement. Materials and methods. Two different types of zirconia specimens with a fully sintered size of 14.0×14.0×2.0 mm³ were prepared, polished with 400, 600, and 800 grit silicon carbide paper, and buried in epoxy resin. They were classified into four groups each control, sandblasting, primer, and sandblasting & primer. Cylindrical resin adhered to the surface-treated zirconia with resin cement. It was stored in distilled water (37℃) for 24 hours, and a shear bond strength test was performed. The normality of the experimental group was confirmed with the Kolmogorov-Smirnov & Shapiro-Wilk test. The interaction and statistical difference were analyzed using a two-way ANOVA. A post-hoc analysis was performed using Dunnett T3. Results. As a result of two-way ANOVA, there was no significant difference in shear bonding strength between zirconia types (P > .05), but there was a significant correlation in the sandblasting, primer, and alumina sandblasting & primer group (P < .05). Dunnett T3 post-test showed that, regardless of the type of zirconia, shear bonding strength was sandblasting & primer > Primer > sandblasting > control group (P < .05). Conclusion. There was no difference in shear bond strength between the types of zirconia. The highest shear bond strength was shown when the mechanical and chemical treatments of the zirconia surface was performed simultaneously.