• Clean Technology
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• v.9 no.4
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• pp.169-177
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• 2003

In order to develope a clean technology by liquid-supported membrane of ionic liquid/PVDF, the solubility of R22 and HFP gases using BMIBF4 as ionic liquid were measured at temperatures from 0 to $30^{\circ}C$, at total pressures up to 4 bars. The solubility of R22 in this ionic liquid was shown a rapid increasing tendency with increases of pressure and decreases of temperature, respectively, whereas the solubility of HFP was showed only a little in the same conditions. Based on these results, liquid-supported membranes of ionic liquid/PVDF were prepared by variables of the deposition amount of ionic liquid in polymer matrix, PVDF and were applied to the separation of fluoro-gases(R22, HFP) including $N_2$ gas. The permeability of R22 was rapidly increased by depending on the deposition amounts of ionic liquid, whereas both of HFP and $N_2$ were just showed so little. Especially, the diffusivity coefficient and solubility parameter of R22 were increased by lower operating temperatures and increased deposition amount of ionic liquid in 1iquid membrane. In conclusion, the selectivity of R22 against HFP was changed to 10-45 times depending on both of operating temperatures and the deposition amount of ionic liquid in BMIBF4/PVDF liquid membrane.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.199-204
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• 2012

$SF_6$ gas is widely used for dry etching process of semiconductor and display fabrication process. But $SF_6$ gas is considered for typical greenhouse gas for global warming. So it is necessary to research relating to $SF_6$ alternatives reducing greenhouse effect in semiconductor and display. $C_3F_6$ gas is one of the promising candidates for it. We studied about etch characteristics by performing Reactive Ion Etching process of dry etching and reduced gas element exhausted on etching process using absorbent Zeolite 5A. $Si_3N_4$ thin film was deposited to 500 nm with Plasma Enhanced Chemical Vapor Deposition and we performed Reactive Ion Etching process after patterning through photolithography process. It was observed that the etch rate and the etched surface of $Si_3N_4$ thin film with Scanning Electron Microscope pictures. And we measured and compared the exhausted gas before and after the absorbent using Gas Chromatograph-Mass Spectrophotometry.