• Journal of the Korean Applied Science and Technology
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• v.21 no.2
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• pp.174-181
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• 2004

Multi-walled carbon nanotubes (CNTs) were prepared by thermal chemical vapor deposition (CVD) and microwave plasma chemical vapor deposition (MPCVD) using various combination of binary catalysts with four transition metals such as Fe, Co, Cu, and Ni. In the preparation of CNTs from acetylene precursor by thermal CVD, the CNTs with very high yield of 43.6 % was produced over $Fe-Co/Al_2O_3$. The highest yield of CNTs was obtained with the catalyst reduced for 3 hr and the yield was decreased with increasing reduction time to 5 hr, due to the formation of $FeAl_2O_4$ metal-aluminate. On the other hand, the CNTs prepared by acethylene plasma CVD had more straight, smaller diameter, and larger aspect ratio(L/D) than those prepared by thermal CVD, although their yield had lower value of 27.7%. The degree of graphitization of CNTs measured by $I_d/I_g$ value and thermal degradation temperature were 1.04 and $602^{\circ}C$, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.2
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• pp.49-56
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• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.45-50
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• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1180-1182
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• 1993

In this paper, studing for the formative characterizations, bonding structures and hydrogen atom content in layer that oxynitride films deposited by Plasma CVD was investigated adaptive possibility for intemediate layer or final passivation layer of ULSI semiconductor devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.436-436
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• 2010

국내 반도체 시장은 세계 1위의 시장점유율을 가지고 있지만 핵심장비의 경우 국내 장비 기술의 낙후로 인해 대부분을 선진국에 의존하는 실정이다. 따라서 국내 장비 기술의 발전 요구에 따라 연구가 진행되었으며 기존 PE-CVD (Plasma Enhanced Chemical Vapor Deposition) 장비에서의 하전입자에 의한 기판 손상 가능을 제거하고 개개의 반응 원소의 에너지와 플럭스를 조절하여 다양한 공정온도에서 증착을 구현할 수 있는 HNB-CVD(Hyperthermal Neutral Beam Chemical Vapor Deposition) 장비를 개발하였다. 고밀도 플라즈마 생성을 위한 마이크로웨이브 SLAN(Slot Antenna) 소스를 사용하였으며 대면적 공정에 적합하도록 설계하였다. 최적의 설계와 진단을 위한 마이크로웨이브 SLAN 소스내의 E-field 분포 시뮬레이션과 Langmuir Probe 진단이 이루어졌다.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.131-134
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• 1998

The deposition rate and surface morphology of Al films deposited by MOCVD have been studied on the $SiO_{2}$ and TiN(60nm/Si) substrates. A1 films were deposited with the pyrolysis of dimethylethylamine alane(DMEAA). When A1 was deposited on Ti& substrate without carrier gas, Al deposition rate increased with H\ulcorner pre- treatment. The $H_2$ gas enhances the CVD reaction at the substrate surface. When Al was deposited on $SiO_{2}$ substrate, $H_2$ plasma pretreatment reduced Al incubation time and made a dense Al film compared with Ar plasma pre- treatment or no pretreatment.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.31-36
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• 2011

Tetrafluoromethane ($CF_4$) has been used as the plasma etching and chemical vapor deposition (CVD) gas for semiconductor manufacturing processes. However, the gas need to be removed efficiently because of their strong absorption of infrared radiation and the long atmospheric lifetime which cause global warming effects. A waterjet gliding arc plasma system in which plasma is combined with the waterjet was developed to effectively produce OH radicals, resulting in efficient destruction of $CF_4$ gas. Design factors such as electrode shape, electrode angle, gas nozzle diameter, electrode gap, and electrode length were investigated. The highest $CF_4$ destruction of 93.4% was achieved at Arc 1 electrode shape, $20^{\circ}$ electrode angle, 3 mm gas nozzle diameter, 3 mm electrode gap and 120 mm electrode length.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.409-409
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• 2010

솔라셀은 차세대 대체 에너지 소스로 최근 큰 각광을 받고 있다. 솔라셀의 제조에 있어 가장 중요한 공정은 마이크로 결정질 및 비결정질 실리콘(uC-Si:H and a-Si:H) 박막을 증착하는 PECVD (Plasma Enhanced CVD)공정이다. 현재까지 이 증착공정을 위한 플라즈마 소스로 CCP(Capacitively Coupled Plasma)가 주로 사용되어 왔다. 그러나, CCP를 플라즈마 소스를 사용한 경우 솔라셀 대량 생산 적용시 다른 방법들에 비해 긴 공정 시간이 해결해야 할 문제점으로 대두되었다. 본 발표에서는 솔라셀의 대량 생산을 위한 마이크로 결정질 실리콘 박막 증착에 있어 현 시점에서 해결되어야 할 문제점에 대해 고찰해 보고자 한다. 현재까지 이러한 문제점들을 해결하기 위해 적용되어 왔던 플라즈마 소스들을 나열하고 이러한 플라즈마 소스에 대한 특성 및 문제점들을 고찰한다. 또한, PECVD 공정상의 문제점을 해결하기 위한 플라즈마 조건을 플라즈마 벌크에서의 전자에너지 분포를 기준으로 제시하고자 한다. 솔라셀용 결정질 실리콘 박막 증착용 플라즈마 소스로 hollow cathode 방전이 가장 유력시되고 있다. 본 연구에서는 CCP 플라즈마에서 hollow cathode 방전시 발생되는 플라즈마 특성에 대한 기초 연구를 제시한다. 기초 연구를 위해 다양한 불활성 가스인 아르콘, 헬륨, 크립톤 가스에 13.56 MHz의 RF 파워를 인가하고 방전되는 플라즈마 밀도 변화를 관찰하였다. 특히, 다양한 hole diameter에서 발생되는 플라즈마 밀도의 변화를 기존 평면 CCP 플라즈마의 밀도에 비교하여 분석함으로써 hole diameter에 따른 효과를 관찰하였다. 이러한 결과는 PIC 시뮬레이션을 통해 얻은 전자에너지 분포함수를 바탕으로 메커니즘을 논의하고자 한다. 마지막으로 솔라셀용 PECVD공정을 위해 고밀도 플라즈마 소스의 필요성뿐 만 아니라 대면적 소스의 구현에 대한 문제점을 고찰하였다. 대면적 공정에서 가장 중요한 핵심 연구 이슈는 공정 균일도를 높이는 것이다. CCP 플라즈마 소스에서 전극의 크기가 대면적화 됨에 따라 발생되는 전자기파 효과에 의한 불균일도에 대해 RF 전자기장 시뮬레이션을 통해 확인하고, 균일도 확보를 위한 방안에 대한 논의하고자 한다.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.1
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• pp.81-87
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• 2010

In this paper, we have fabricated $SiO_2$ oxidation thin films by HDP-CVD(high density plasma-chemical vapor deposition) method for passivation layer or barrier layer of OLED(organic light emitting diode). We have control and estimate the deposition rate and relative index characteristics with process parameters and get optimized conditions. They are gas flow rate($SiH_4:O_2$=30:60[sccm]), 70 [mm] distance from source to substrate and no-bias. The WVTR(water vapor transmission rate) is 2.2 [$g/m^2$_day]. Therefore fabricated thin film can not be applied as passivation layer or barrier layer of OLED.

• Applied Chemistry for Engineering
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• v.29 no.1
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• pp.10-17
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• 2018

POU (point of use) scrubbers were applied for the treatment of waste gases including PFCs (perfluorocompounds) exhausted from the CVD (chemical vapor deposition), etching, and cleaning processes of semiconductor and display manufacturing plant. The GWP (global warming potential) and atmosphere lifetime of PFCs are known to be a few thousands higher than that of $CO_2$, and extremely high temperature more than 3,000 K is required to thermally decompose PFCs. Therefore, POU gas scrubbers based on the thermal plasma technology were developed for the effective control of PFCs and industrial application of the technology. The thermal plasma technology encompasses the generation of powerful plasma via the optimization of the plasma torch, a highly stable power supply, and the matching technique between two components. In addition, the effective mixture of the high temperature plasma and waste gases was also necessary for the highly efficient abatement of PFCs. The purpose of this paper was to provide not only a useful technical information of the post-treatment process for the waste gas scrubbing but also a short perspective on R&D of POU plasma gas scrubbers.