• 열처리공학회지
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• 제8권4호
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• pp.255-265
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• 1995

Stainless steel type 304L has been nitrided in the low pressure (600Pa) and high nitrogen (80% $N_2$+20% $H_2$) environment for 5 hours by the square-wave-pulsed-d.c. plasma as a function of temperature $400{\sim}550^{\circ}C$ and pulsation. At the lower temperature range of $400{\sim}500^{\circ}C$ and at the relatively high ratio of pulse duration to pulse period. "S-phase" has been developed in the form of thin nitrided surface layer which has many cracks, leading to be nearly impossible for the industrial anti-wear and anti-corrosion applications. At the higher temperature up to $550^{\circ}C$ with the increasing ratio of the pulse duration to pulse period up to $50{\mu}s/100{\mu}s$, the nitrided layer, whose growth rate has increased also, has been composed mainly of CrN and $Fe_4N$ phases and has become thick, uniform and nearly crack-free.

• 한국분말재료학회지
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• 제6권4호
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• pp.286-293
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• 1999

This study was to analyse the relationship between process parameters of the sintered composite and plasma nitriding properties with pulsed DC plasma. Fe-40at%$SiC_p$ composites of full density were fabricated by hot pressing at 1100~$1150^{\circ}C$. Sintered Fe-40at%Al and Fe-40at%$Al/SiC_p$ alloys were nitrided under pulsed DC plasma. Excellent surface hardness in the FeAl alloys could be obtained by plasma nitriding. ($H_v$ :100gf, diffusion layer : 1100~$1450kg/mm^2$, matrix : 330~$360kg/mm^2$) The wear resistance of $FeAl/SiC_p$ composites were improved about by 4~6times than FeAl and nitrided $FeAl/SiC_p$ were improved about 2 times than $FeAl/SiC_p$ matrix.

• 한국표면공학회지
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• 제25권6호
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• pp.287-292
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• 1992

Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.

• 한국표면공학회지
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• 제36권2호
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• pp.206-213
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• 2003

Effects of plasma nitriding on the surface characteristics of tool steels have been investigated using wear tester, micro-hardness tester and scanning electron microscope (SEM) Commercial SKD 11 and SM45 alloy were used as specimens and were plasma nitrided using a plasma nitriding equipment for 5 hr and 10hr at $500^{\circ}C$. Microstructure and phase analysis were performed using SEM and XRD. It was found that plasma nitriding for lour at $500^{\circ}C$, compared with plasma nitriding for 10hr at $500^{\circ}C$, had a thick nitrided layer and produced a layer with good wear resistance and hardness as nitriding time increased. SKD11 alloy showed that wear resistance and hardness decreased, whereas surface roughness increased, compared with SM45 alloy.

• 한국표면공학회지
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• 제30권3호
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• pp.167-174
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• 1997

WC-C0 base cemented carbides were plasma nitrided to obtain more hadened surface layer. The surface hardness of Hv1338 which is higher than a non-treated ane by 30%, and the hardened layer thickness of about 50$\mu\textrm{m}$ were obtained by the treatment of 3hrs under the conditions of $550^{\circ}C$, and 5torr of gas pressure of which composition was 1:1 of $N_2:H_2$. The nitrided surfaces has WIN and W2N phases in the non-coated samples and AIN phase in the alumina coated sampled as the results of X-ray results, and showed surface roughnness of 5$\mu\textrm{m}$ which were caused by the sputtering action of the plasma gasee. The hardenened layer exihibits an enhanced wear resistance the cuttability test.

• 전자공학회논문지A
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• 제29A권10호
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• pp.35-41
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• 1992

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.240-243
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• 2002

Carbon nitride films have been deposited on Si(100) substrate by a high voltage discharge plasma combined with laser ablation in a nitrogen atmosphere. The films were grown both with and without the Presence of an assisting focused Nd:YAG laser ablation. The laser ablation of the graphite target leads to vapor Plume plasma expending into the ambient nitrogen arc discharge area. X-ray photoelectron spectroscopy and Auger electron spectroscopy were used to identify the binding structure and the content of the nitrogen species in the deposited films. The surface morphology of the films was studied using a scanning electron microscopy Data of infrared spectroscopy and x-ray photoelectron spectroscopy indicate the existence of carbon-nitrogen bonds in the films. The x-ray diffraction measurements have also been taken to characterize the crystal properties of the obtain films.

• Journal of Advanced Marine Engineering and Technology
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• 제22권5호
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• pp.712-720
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• 1998

The effect of H2:N2 gas ratio on the case thickness hardness and nitrides formation in the sur-face of SCM440 machine structural steel have been studied by micro-pulse plasma process. The thickness of compound layer increased with the increase of nitrogen content in the gas com-position. The maximum thickness of compound layer the maximum case depth and the maximum surface hardness were about 15.8${\mu}m$, 400${\mu}m$ and Hv765 respectively in the nitriding condition of 250Pa and 70% nitrogen content at $520^{\circ}C$ for 7hrs. Generally only nitride phases such as ${\'{\gamma}}$($Fe_4N$)$\varepsilon(Fe_2}{_3N}$ phases were detected in compound and diffusion layer by XRD analysis. The amount of $\varepsilon(Fe_2}{_3N}$ phase increased with the increase of nitrogen content. The relative amounts and kind of phases formed in the nitrided case changed with the change of nitrogen content in the gas composition.

• Journal of Advanced Marine Engineering and Technology
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• 제22권5호
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• pp.702-711
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• 1998

The characteristics of corrosion resistance for the surface of medium high carbon steels and low alloy steels utilizing as manufacturing the machinery structures and machining tools and treating by plasma/ion nitriding process have been studied in terms of electrochemical polarization behav-iors including corrosion potential(Ecorr) anodic polarization trends and polarization resistance(Rp) The seven base materials showed a clear passivation behavior for the polarization tests in the ASTM standard solution 1N ${H_2){SO_4}$ Although the treated surface by plasma nitriding for the seven test materials showed a significant increase in hardness the treatment gave a detri-mental effect in corrosion resistance. The various characteristics including corrosion potential polarization curves microstructures corrosion current polarization resistance among non-treat-ed nitriding and/or soft-nitriding treated specimens have been investigated and some of the mechanisms discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.