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Lee, Cheon-Hyo;Jang, Ji-Hye;Kang, Min-Cheol;Lee, Byung-June;Ha, Pan-Bong;Kim, Young-Hee
- Journal of the Korea Institute of Information and Communication Engineering
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- v.13 no.9
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- pp.1858-1864
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- 2009
In this paper, we design a non-volatile memory IP, 1-kb one-time programmable (OTP) memory, used for power management ICs. Since a conventional OTP cell uses an isolated NMOS transistor as an antifuse, there is an advantage of it big cell size with the BCD process. We use, therefore, a PMOS transistor as an antifuse in lieu of the isolated NMOS transistor and minimize the cell size by optimizing the size of a OTP cell transistor. And we add an ESD protection circuit to the OTP core circuit to prevent an arbitrary cell from being programmed by a high voltage between the terminals of the PMOS antifuse when the ESD test is done. Furthermore, we propose a method of turning on a PMOS pull-up transistor of high impedance to eliminate a gate coupling noise in reading a non-programmed cell. The layout size of the designed 1-kb PMOS-type antifuse OTP IP with Dongbu's $0.18{\mu}m$ BCD is $129.93{\times}452.26{\mu}m^2$.
https://doi.org/10.6109/JKIICE.2009.13.9.1858 인용 PDF KSCI

Kim, Seung Youl;Lee, Je Hoon
- Convergence Security Journal
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- v.15 no.3_1
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- pp.99-105
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- 2015
A typical SRAM-based PUF is used in random number generation and key exchange process. The generated out puts should be preserved, but the values are changed owing to the external environment. This paper presents a new D-PUF logic employing a dual anti-fuse OTP memory to the SRAM-based PUF. The proposed PUF can enhance the reliability of the logic since it can preserve the output values. First, we construct the OTP memory using an anti-fuse. After power up, a SRAM generates the random values owing to the mismatch of cross coupled inverter pair. The generated random values are programed in the proposed anti-fuse ROM. The values that were programed in the ROM at once will not be changed and returned. Thus, the outputs of the proposed D-PUF are not affected by the environment variable such as the operation voltage and temperature variation, etc. Consequently, the reliability of the proposed PUF will be enhanced owing to the proposed dual anti-fuse ROM. Therefore, the proposed D-PUF can be stably operated, in particular, without the powerful ECC in the external environment that are changed.
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