• Korean Journal of Materials Research
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• v.8 no.3
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• pp.263-267
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• 1998

In this study, we have fabricated in-situ multilayer $YBa_2Cu_3O_{7-\delta}$/$SrTiO_{3}$/$YBa_2Cu_3O_{7-\delta}$ ramp edge type junctions by using a metal mask and pulsed laser deposition method and studied the junction properties. The junctions showed RSJ-like I-V characteristics. The normal state junction resistance R, of $18 \omega$ was nearly constant with temperature. The dc-SQUID sensors fabricated with the junctions show a sensitivity that transfer function dV/$d\Phi$)~$22\mu$V/$\Phi_{0}$, indicating that the in-situ ramp edge type junction is potentially useful for sensor application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1072-1074
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• 1999

In this study, it is the purpose to develope a cheap and compact pulsed $CO_2$ laser with pulse repetition rate range of 1 kHz. We used a IGBT switched power supply as a power supply, which is cheap and simple comparing to others. PIC one-chip microprocessor was used for precise control of a laser power supply on the control part. And the laser cavity was fabricated as an axial and water cooled type. The laser performance characteristics as various parameters, such as pulse repetition rate gas pressure, and gas mixture rate have been investigated. The experiment was done under the condition of total pressure of $CO_2:N_2$:He = 1.3:10, 1:1.5:5 1:9:15 from 6 Torr to 15 Torr and pulse repetition rate from 100 Hz to 900 Hz. As a result, the maximum average output was about 20.5 W at the total pressure of 15 Torr, the gas mixture $CO_2:N_2$:He = 1:9:15 and the pulse repetition rate of 700 Hz.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1060-1062
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• 1999

Pulsed Nd:YAG laser is used widely for materials processing and instrumentation. It is very important to control the laser energy density in materials processing by a pulsed Nd:YAG laser. A pulse repetition rate and a pulse width are regarded as the most dominant factors to control the energy density of laser beam. In this study, the alternating charge-discharge system was designed to adjust a pulse repetition rate. And the parallel mesh is added to increase laser output power. This system is controlled by one chip microprocessor and allows to replace an expensive condenser for high frequency to a cheap condenser for low frequency. In addition, we have investigated the current pulse shape of flashlamp and the operating characteristics of a pulsed Nd:YAG laser. As a result, it is found that the laser output of the power supply using the parallel mesh and the alternating charge-discharge system is not less than that of typical power supply. As the pulse repetition rate rises from 10pps to 110pps by the step of 20pps at 1000V and 1200V, it is found that the laser efficiency decreases but the laser output power increases about 5W at each step.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.74-75
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Analytical Science and Technology
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• v.25 no.4
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• pp.223-229
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• 2012

Analytical signal from ICP was compensated by the light scattering of sample aerosols. Reference scattering signal was generated by a He-Ne or diode laser, monitored for the amount of aerosol producing and used for the compensation of analytical signals. The result showed that significant improvement in precision could be achieved for the short-term signal (within 1 minute) from 3.4% to 0.9% RSD in signal and 14.9% to 4.2% for the long-term (10 minutes) for Be, Pb and Co. This method is very useful not only for the pulse type but for continuous type signals especially when a nebulizer is unstable. To improve long-term precision, higher stability is required in the scattering cell and detector as well as the reduction of noise from the line between a nebulizer and plasma.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.57-57
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• 2009

산업의 고도화에 따른 구조물의 사용 환경이 열악해지고 최근 에너지저감과 환경문제 개선을 위한 경화의 요구에 따라 뛰어난 내식성 및 우수한 고비강도 특성을 갖고 있는 타이타늄 및 타이타늄합금의 활용에 대한 연구가 많은 주목을 받고 있다. 이에 따라 타이타늄 신합금의 개발뿐만 아니라 기존에 개발되어 비교적 보편적으로 적용되고 있는 타이타늄 부품의 제조 및 성형기술에 대한 수요도 급증하고 있다. 특히, 기기 및 부품 제조를 위한 용접/접합기술도 매우 중요한 요소기술로 자리메김하고 있다. 타이타늄은 산소, 수소 등의 침입형 원소와의 친화력이 강한 활성이 큰 금속으로 용접시 고온에 노출되면 급격히 산화 및 취화 등의 문제를 발생한다. 따라서 타이타늄의 용접시에는 $426^{\circ}C$이상의 온도에서는 대기로부터 용접부가 차단되도록 하는 쉴딩기술이 매우 중요하다. 타이타늄의 용접은 일반적으로 아크용접, 전자빔 용접, 레이저 용접 및 확산접합 등이 적용되고 있으나 용접입열 조정이 용이하고 아크 안정성이 높고 용접부의 기계적 특성이 우수한 GTA 용접이 작업성을 고려하여 가장 많이 적용되고 있다. 본 연구에서는 미국용접학회(AWS)의 타이타늄 용접가이드를 분석 및 소개하였고, 1t 이하의 박판 CP Ti를 대상으로 GTAW 용접부 미세조직 및 기계적 특성을 분석하였다. 이때, 용접 비드폭 제어 및 펄스 용접기술을 통하여 박판 타이타늄의 최적 GTAW 공정변수 제어기술을 분석하였다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.6
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• pp.483-489
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• 2017

An ultrasonic technique was developed to characterize the resonance behavior of a microcantilever operating in a megahertz regime. A high-power ultrasonic pulser and a contact transducer were employed to excite the silicon microcantilever, and a Michelson interferometer was used to obtain the time domain waveform. The natural frequency of the microcantilever was evaluated through the fast Fourier transform of the signal, and a numerical analysis using the finite element method confirmed the measurement data. The present study proposes a novel and facile method to evaluate nanoscale materials and structures with high sensitivity compared to conventional approaches.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.184-184
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• 2011

반도체 전자 소자의 초고집적회로(VLSI, Very Large Scale Integrated Circuit)가 수년간 지속됨에 따라 실리콘 기반으로 하는 MOSFET 성능의 한계에 도달하게 되었다. 재료 물성, 축소, 소자 공정 등에 대한 원인으로 이를 극복하고자 하는 재료와 성능향상에 관한 연구가 진행되고 있다. 이에 기존 시스템의 전자의 전하 정보만을 응용하는 것이 아니라 전자의 스핀 정보까지 고려하는 스핀트로닉스 연구분야가 주목을 받고 있다. Spin-FET는 스핀 주입, 스핀 조절, 스핀측정 등으로 나뉘어 연구되고 있으며 이 중 스핀 주입의 효율 향상이 우선시 해결되어야 한다. 일반적으로 스핀 주입 과정에서 소스가 되는 강자성체와 스핀 확산 거리가 긴 반도체 물질과의 Conductance mismatch가 문제되고 있다. 이에 자성 반도체는 근본적인 문제를 해결하고 반도체와 자성체의 특성을 동시에 나타내는 물질로써, Si과 Ge (4족) 등의 반도체뿐만 아니라, GaAs, InP (3-5족), ZnO, ZnTe (2-6족) 등의 반도체 또한 많은 연구가 이루어지고 있다. 자성 반도체에서 해결해야 할 가장 큰 문제는 물질이 자성을 잃는 Curie 온도를 상온 이상으로 높이는 것이다. 이에 본 연구는 전이금속이 도핑된 4족 Si 반도체 박막을 성장하고 후처리 공정을 통하여 나타나는 구조적, 자기적 특성을 연구하였다. 펄스 레이저 증착 방법을 통하여 p-type Si 기판위에 전이금속 Fe이 도핑된 박막을 500 nm 로 성장하였다. 성장 온도는 $250^{\circ}C$로 하였고, 성장 분압은 $3 {\times}10^{-3}$Torr 로 유지하며 $N_2$ 가스를 사용하였다. 구조적 결과를 보기 위해 X선 회절 분석과 원자력 현미경 결과를 확인하였고, 자기적 특성을 확인하기 위해 저온에서 초전도 양자 간섭계로 조사하였다. XRD를 통해 (002)면, (004)면의 Si 기판 결정을 보았으며, Fe 관련된 이차상이 형성됨을 예측해 보았다. ($Fe_3Si$, $Fe_2Si$ 등) 초전도 양자 간섭계에서 20 K에서 측정한 이력 현상을 관찰하고, 온도변화에 따른 전체 자기모멘트를 관찰하였으며 이는 상온에서도 강자성 특성이 나타남을 확인하였다.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.118-123
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• 2002

$ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition technique on $Al_2O_3$(0001) substrates at a substrate temperature of $550^{\circ}C$ with various oxygen pressures 100, 200 and 300 mTorr. The films grown under different growth oxygen pressures have been characterized using microstructural and luminescent measurements. The different photoluminescence (PL) characteristics with the increase in oxygen pressures may result from the change of the crystallinity and the composition ratio of Zn and Ga in the films. The luminescent spectra show a broad band extending from 300 to 600 nm peaking at 460 nm. The PL brightness data obtained from the $ZnGa_2O_4$ films grown under optimized conditions have indicated that the sapphire is a promising substrate for the growth of high quality $ZnGa_2O_4$ thin film phosphor.