• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.49 no.4
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• pp.301-309
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• 2021

Pulse count method is the classical reaction wheel speed detection method. In this study, we represent the pulse count method as mathematical equations. Instead of rotation speed, we model the reaction wheel rotation through rotation angle during sampling periods. We verified the effectiveness of the proposed model by comparing the pulse counts variation and averaging method effects from the model and previous research results. Then, we add tacho pulse non-uniformity to this verified model, and examine the errors of pulse count method. We express the measurement error increasement due to non-uniformity as mathematical equations, and also shows the requirement of moving average numbers to offset the measurement errors.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.