• Title/Summary/Keyword: 투과광

Search Result 1,175, Processing Time 2.61 seconds

A Study of Gamma-ray Irradiation Effects on Commercially Available Single-mode Optical Fiber (국내외 상용 단일모드 광섬유의 감마선 영향 분석 연구)

  • Kim, Jong-Yeol;Lee, Nam-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2012.05a
    • /
    • pp.564-567
    • /
    • 2012
  • Optical fibers are going to be used for telecommunication, image fibers, sensors under irradiation in nuclear power plants and various irradiation facilities. Especially, Temperature detection sensors using Raman light scattering, temperature or strain sensors using fiber gratings, magnet-optical sensors using photo-magnetic effect, are already commercialized. However, When fibers are exposed to ionizing radiation, color centers are formed in fibers which reduces their light transmission, and it is limited in applying under radiation environments. In this study, $Co^{60}$ gamma-ray induced optical attenuation on Ge-doped single mode(SM) fiber has been measured. Gamma-ray is irradiated for 4hours at the dose rate of 0.5kGy/hr, 2kGy/hr, 8kGy/hr. Consequently, gamma-ray induced loss based on radiation effects in Ge-doped SM fiber occur precisely. Furthermore, dose rate effect that the higher dose rate in the same total dose, the more increase loss of optical fiber and annealing effect that the higher the loss after irradiation, the more increase the recovery rate of the loss are observed in the fiber. This results plan to make use of bases in the study of the radiation-hardened optical fiber.

  • PDF

Fabrication of Hydrogel and Gas Permeable Membranes for FET Type Dissolved $CO_{2}$ Sensor by Photolithographic Method (사진식각법을 이용한 FET형 용존 $CO_{2}$ 센서의 수화젤막 및 가스 투과막 제작)

  • Park, Lee-Soon;Kim, Sang-Tae;Koh, Kwang-Nak
    • Journal of Sensor Science and Technology
    • /
    • v.6 no.3
    • /
    • pp.207-213
    • /
    • 1997
  • A field effect transistor(FET) type dissolved carbon dioxide($pCO_{2}$) sensor with a double layer structure of hydrogel membrane and $CO_{2}$ gas permeable membrane was fabricated by utilizing a $H^{+}$ ion selective field effect transistor(pH-ISFET) with Ag/AgCl reference electrode as a base chip. Formation of hydrogel membrane with photo-crosslinkable PVA-SbQ or PVP-PVAc/photosensitizer system was not suitable with the photolithographic process. Furthermore, hydrogel membrane on pH-ISFET base chip could be fabricated by photolithographic method with the aid of N,N,N',N'-tetramethyl othylenediarnine(TED) as $O_{2}$ quencher without using polyester film as a $O_{2}$ blanket during UV irradiation process. Photosensitive urethane acrylate type oligomer was used as gas permeable membrane on top of hydrogel layer. The FET type $pCO_{2}$ sensor fabricated by photolithographic method showed good linearity (linear calibration curve) in the range of $10^{-3}{\sim}10^{0}\;mol/{\ell}$ of dissolved $CO_{2}$ in aqueous solution with high sensitivity.

  • PDF

A study on the application of dichroic mirror for the improvement of luminance and luminous efficacy in an AC Plasma Display Panel (AC-PDP의 휘도와 효율 향상을 위한 Dichroic Mirror의 응용에 관한 연구)

  • 송병무;김중균;황만수;황기웅
    • Journal of the Korean Vacuum Society
    • /
    • v.10 no.1
    • /
    • pp.98-103
    • /
    • 2001
  • A new application of dirchroic mirror for the improvement of luminance and luminous efficacy in an AC-Plasma Display Panel (PDP) is suggested. Only about half of the Vacuum Ultraviolet (VUV) generated in the reflective PDP cell is used for the excitation of the phosphor. We are suggesting an idea of adopting a dichroic mirror which can reflect the VUV toward the phosphor which otherwise is absorbed by the front panel. The optical constants of the thin films of dirhroic mirror were determined from the photometric measurements through an iteration process of matching calculated and measured values of the reflectance and transmittance in the VUV wavelength region. From these results, we could design such a filter whose high reflection zone is centered at 147nm by a computer simulation accurately. The 147nm VUV is radiated from Xenon 3Pl state which is dominantly used to activate the phosphor in the PDP cell. The dichroic mirror was made with an electronbeam evaporator and its reflectance was measured by a reflectometer. We confirmed the usefulness of the dichroic mirror for the improvement of efficiency with experiments done by test panels. The panel with mirror shows improved luminance and luminous efficacy by 20∼30%.

  • PDF

박막태양전지용 투명전도성 ZnO(Al), ZnO(AlGa) 박막제조 및 특성 연구

  • Son, Yeong-Ho;Park, Jung-Jin;Choe, Seung-Hun;Kim, Jin-Ha;Lee, Dong-Min;Choe, Jeong-Gyu;Lee, Jang-Hui;Jeong, Ui-Cheon;Chae, Jin-Gyeong;Lee, Jong-Geun;Jeong, Myeong-Hyo;Heo, Yeong-Jun;Kim, In-Su
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.364-364
    • /
    • 2013
  • 현재 투명전극은 주로 ITO를 사용하고 있으며, ITO는 인듐산화물(In2O3)과 주석산화물(SnO2)이 9대 1의 비율로 혼합된 화합물로 인듐이 주성분이다. 따라서 ITO 사용량의 증가는 인듐의 수요 증가를 이끌어 2003년 이후 인듐 잉곳의 가격이 급등하였다. LCD에 응용되는 금속재료의 가격추이를 비교해보면, 인듐이 가장 큰 변화를 보이고 있으며, 2005년 인듐 가격은 2002년 대비 1,000% 이상 상승하였다가 2007년 이후 500%p 하락하여 2008년 2월 22일 기준으로 톤당 49만 달러에 거래되고 있다. 같은 기간 동안 알루미늄의 가격은 76.6% 상승하였으며 구리는 394%, 주석은 331% 상승하였다. 이러한 인듐의 가격 상승폭은 동일한 기간 동안 다른 금속 재료와 비해 매우 크며, 단위 질량당 가격도 20배 이상 높은 수준이다. ITO의 주성분인 인듐의 이러한 가격의 급등 및 향후 인듐의 Shortage 예상으로 인해 ITO 대체재 확보의 필요성이 증가되고 있다. 태양광 발전산업에서 현재 주류인 결정질 실리콘 태양전지의 변환효율은 꾸준히 향상되고 있으나, 태양전지의 가격이 매년 서서히 하강되고 있는 실정에서 결정질 실리콘 가격의 상승 등으로 고부가 가치 산업유지에 어려움이 있으며, 생산 원가를 낮출 수 있는 태양전지 제조기술로는 2세대 태양전지로 불리는 박막형이 현재의 대안으로 자리매김하고 있으며, 박막태양전지 산업분야가 현재의 정부정책 지원 없이 자생력을 갖추고 또한 시장 경쟁력을 확보하기 위해서는 박막태양전지 개발과 더불어 저가의 재료개발도 시급한 상황이다. 본 연구에서는 In-line magnetron sputtering system을 사용하여 소다라임 유리기판 위에 박막태양전지용 투명전도성 ZnO(Al) 박막 및 ZnO(AlGa) 박막을 각각 제작하였다. 각각 박막의 표면특성 및 성장구조, 결정성을 조사하였고, 또한 전기적 특성, 홀이동도와 개리어농도, 박막의 두께, 광투과율 특성을 연구하였다. ZnO(Al)박막, ZnO(AlGa)박막 대한 각각 특성을 평가하고 그 결과들을 논하고자 한다.

  • PDF

Frequency Doubling in LiIO3 Crystals by the Ring Enhancement Cavity (고리형 증폭 공진기에 의한 LiIO3결정에서 제2조화파 발생)

  • Kim, Sang-Gee
    • Journal of Korean Ophthalmic Optics Society
    • /
    • v.4 no.2
    • /
    • pp.45-49
    • /
    • 1999
  • The second harmonic, wavelength is 397nm, of the continuous wave diode laser, whose maximum power is 35mW, was generated in $LiIO_3$ crystals in a ring enhancement cavity. 5mm- and 10mm-long crystals cut $43.21^{\circ}$ for optic axis were used in this experiment. Both surfaces of those were anti-reflection coated for 794nm. In case the crystal was inserted into the cavity, the condition of separation between two concave mirrors for the optimum mode matching was found. The conversion efficiency of second harmonic generation was increased by the resonant enhancement of pumping power in the ring enhancement cavity, and the frequency of diode laser was locked to that of the counter-propagation mode generated from the surface of crystal. When the pumping power was 28 mW, the infrared buildup factor was about 45 without the crystal, and 14 with the crystal due to the transmission loss of crystal. The maximum second harmonic powers of $1.5{\mu}W$ and $6.6{\mu}W$ were obtained, and corresponding conversion efficiencies were $(6.584{\pm}0.56){\times}10^{-3}$%, $2.6{\pm}0.21){\times}10%{-2}$% in 5mm- and 10mm-long $LiIO_3$, respectively.

  • PDF

Electrical and Optical Properties of the GZO Transparent Conducting Layer Prepared by Magnetron Sputtering Technique (마그네트론 스퍼터링법으로 제작된 GZO 투명전도막의 전기적 및 광학적 특성)

  • No, Im-Jun;Kim, Sung-Hyun;Shin, Paik-Kyun;Lee, Kyung-Il;Kim, Sun-Min;Cho, Jin-Woo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.24 no.4
    • /
    • pp.110-115
    • /
    • 2010
  • Transparent conducting gallium-doped zinc oxide (GZO) thin films which were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The GZO thin films were fabricated with an GZO ceramic target (Zn : 97[wt%], $Ga_2O_3$ : 3[wt%]). The GZO thin films were deposited by varying the growth conditions such as the substrate temperature, oxygen pressure. Among the GZO thin films fabricated in this study, the one formed at conditions of the substrate temperature of 200[$^{\circ}C$], Ar flow rate of 50[sccm], $O_2$ flow rate of 5[sccm], rf power of 80[W] and working pressure of 5[mtorr] showed the best properties of an electrical resistivity of $2.536{\times}10^{-4}[{\Omega}{\cdot}cm]$, a carrier concentration of $7.746{\times}10^{20}[cm^{-3}]$, and a carrier mobility of 31.77[$cm^2/V{\cdot}S$], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

Numerical Analysis of Magneto-Optic Performance of One-Dimensional Magneto-Photonic Crystal (1차원 자성 포토닉 결정의 자기 광학 특성 수치해석)

  • 박재혁;조재경
    • Journal of the Korean Magnetics Society
    • /
    • v.10 no.3
    • /
    • pp.99-105
    • /
    • 2000
  • One dimensional magneto-photonic crystal having structure of (A/B)$^{k/W}$(B/A)$^{k}$ , where M is a magnetic layer of highly Bi-substituted iron garnet, A and B are dielectric layers of $SiO_2$ and T $a_2$O$_{5/}$, and k is the stacking number of the dielectric layers, has been numerically analyzed as a function of the thickness (d$_{M}$) of M (1∼535 nm) and the stacking numer of k (5∼15). The transmittance, Faraday rotation, and figure of merit of the magneto-photonic crystal have been investigated both in the visible and infrared wavelengths. A factor of several and several tens greater Faraday rotation and figure of merit have been obtained compared to the single layer of M, at many localized modes. In the visible the maximum figure of merit of 0.15 was obtained ( = 720 nm) when k = 11 and d$_{M}$ = 375 nm with T : 0.54, $\theta$$_{F}$ = 8.13$^{\circ}$, which was a factor of 30 greater than that of single garnet layer. Much greater maximum figure of merit, 0.285, was obtained in the infrared ( = 1114 nm) when k = 11 and d$_{M}$ = 800 nm with T = 0.66, $\theta$$_{F}$ = 18$^{\circ}$, which was a factor of 100 greater than that of single garnet layer.

  • PDF

Photodynamic effect of Photofrin and Radachlorin against Staphylococcus aureus and Staphylococcus epidermidis (황색포도알균과 표피포도알균에 대한 포토프린과 라다클로린의 광역학 효과)

  • Seo, Choong-Won;Ryu, Jae-Gi;Kwon, Pil-Seung
    • Journal of Digital Convergence
    • /
    • v.12 no.6
    • /
    • pp.407-414
    • /
    • 2014
  • The aim of this study was to evaluate the photodynamic therapy effects against staphylococci using Photofrin and Radachlorin with Light emitting diode(LED). Experimental methods, The bacterial suspensions containing Staphylococcus aureus and Staphylococcus epidermidis at $1{\times}10^5$ were prepared and diluted to different concentrations of photosensitizer, Photofrin or Radachlorin, on 1.25, 2. 5,5 and $10{\mu}g/ml$. The bacterial suspensions were exposed to 630 and 670 nm LED light at the energy density of 14.4 and $19.8J/cm^2$, respectively. The CFU results of S. aureus and S. epidermidis were showed 33 and 50 colony forming at $5{\mu}g/ml$ of Photofrin, respectively and both of them perfectely were dead at $5{\mu}g/ml$ of Radachlorin. The fluorescent intensity by flow cytometry was showed the increase in the dead cells than the normal cells. In the TEM photograph, the damage of bacterial membrane and the distortion of cell morphology were observed. These results suggest that photodynamic therapy combine with Photofrin and Radachlorin can be applied a new modality for antibacterial therapy.

Photochromic lens for patients with photophobia and estimation of clinical trial efficacy (광시증 환자를 위해 개발된 광변색렌즈와 임상 효과 평가)

  • Ha, Jin-Wook;Yu, Dong-Sik
    • Journal of Korean Ophthalmic Optics Society
    • /
    • v.10 no.1
    • /
    • pp.27-34
    • /
    • 2005
  • Photochromic lens is the color changing lens from colorlessness to colorness when exposed to UV light. It can protect eyes from UV-B light which cause the cataract and can be used as sunglass in the summer since it can cut off 70~80% of sun light. Surface coating technique was used to develop lens which has 70% light transmittance and of which fading time of color change is within 5 min. Various color lenses were developed so that these had various color such as blue, green, brown, violet, yellow and red etc. Lens has an excellent physical properties, 100% adhesion and 4~5H hardness. The chemical and the scratch resistance of this lens were the greatest and the thermal stability was also higher. The clinical trial of developed lens were applied to 65 patients who had photophobia by various reasons at ophthalmology of Soonchunhyang University Hospital. Results showed that glaring was significantly reduced and the visual health were remarkably improved. Especially, anti-glaring effect in the night was great for the patient who had the LASIK operation. Protection of UV-B and blue light also can prevent the patient from cataract and the yellowish crystalline lens at old ages. Through the result of clinical. trial, we know that photochromic lens could be a new technique for both cure and precaution of photophobia.

  • PDF

이중구조 투명전극을 이용한 실리콘 박막 태양전지 효율향상 기법

  • Kim, Hyeon-Yeop;Kim, Min-Geon;Choe, Jae-U;Lee, Jun-Sin;Kim, Jun-Dong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.591-591
    • /
    • 2012
  • 본 연구는 Transparent conducting oxide (TCO, 산화물투명전극)를 이용한 박막태양전지 효율향상에 관한 것으로, 이중의 TCO층(Double-stacked TCO layer)의 효과적인 광학 및 전기적 설계에 관한 것이다. 기존 박막 태양전지에서는 투명전극 TCO layer로서, ITO (Indium-Tin-Oxide), FTO (Fluorine- Tin-Oxide), 및 AZO(Aluminum-doped Zinc Oxide) 등을 사용해 왔다. 각 TCO layer마다 장점이 있지만 단점 또한 존재한다. ITO의 경우 높은 전기적 특성을 가지는 반면 수소 플라즈마에 취약하고 기계적 강도에 취약해 ITO 단일층만으로 박막 태양전지에 적용하는 것에 제한을 받는다. 한편, AZO의 경우 전기적 특성도 우수할 뿐만 아니라 수소 플라즈마에도 내구성이 강한 장점이 있지만, 일함수가 p형 반도체보다 낮아 Schottky junction이 되어, 높은 전위장벽이 형성된다. 이는 정공의 이동을 방해하고, 정공의 축적이 일어나서 순방향 전압을 인가할 때 많은 전류의 감소를 가져온다. 또한, AZO와 p형 반도체 사이의 높은 직렬저항으로 인해 광전압(Voc, Open circuit voltage)와 충실률 (FF, Fill factor)가 떨어진다는 단점이 있다. 본 실험에서는 ITO/AZO 2중구조의 TCO층을 적용하여 상기의 문제점을 해결하고자 한다. 이중 구조 TCO층은 Magnetron sputter system을 이용하여, 단계적으로 증착되었다. 빛이 입사하는 유리에 ITO를 제1전도층으로 증착하였는데, ITO는 입사광의 투과도와 전기전도성이 우수하다. 제2전도층으로는 AZO층을 이용하였으며, 실리콘 반도체층과 접하게 된다. AZO는 실리콘 증착시 발생하는 수소 플라즈마에 안정적이고, 물리적 강도 또한 우수한 장점이 있다. 이중 구조층위에 실리콘 광흡수층(Si absorber)을 증착하였으며, pin 구조를 가진다. 기존, 단일막 TCO층과 2중구조 TCO층을 이용하여, 실리콘 박막 태양전지를 구성하였다. 이때, ITO/AZO의 2중구조를 적용하였을 때 태양 전지 특성이 크게 향상된 결과를 얻을 수가 있었다. 특히, 전류밀도의 경우 ITO, FTO, AZO 각각 14.5 mA/cm2, 11.2 mA/cm2, 8.18 mA/cm2를 나타낸 반면 ITO/AZO 2중구조의 경우 약 17mA/cm2 로 크게 향상 되었고, 태양전지 변환 효율도 각각 7.5%, 6.9%, 4%에서 ITO/AZO 2중 구조의 경우 8.05%로 크게 향상되었다. 본 발표에서는 2중구조 TCO를 이용한 현공정에 적용 가능한 박막태양전지 효율향상 기법에 대해 논의하고자 한다.

  • PDF