• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.74-75
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.951-954
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• 2004

본 논문에서는 DLC(Diamond-like Carbon) 박막과 기판 사이에 금속층을 포함하는 DLC 박막의 기계적 특성을 분석하였다. 금속층은 sputtering법을 사용하고, DLC 박막은 PECVD법을 사용하여 각각 중착하였다. 티타늄(Ti), 니켄(Ni), 크롬(Cr)을 각 중간 금속층으로 사용한 후 DLC 박막과 실리콘(Si) 기판 간의 기계적 특성을 분석하였다. 각 막의 두께는 FE-SEM으로 확인하였고, DLC 박막의 구조 평가는 Raman spectrometer를 사용하여 분석하였으며, 각 금속층과 DLC 박막의 표면 상태는 AFM을 이용하여 확인하였다. XRD 분석을 통하여 박막의 격자분석을 하였고, SIMS(secondary ion mass spectrometry) 분석을 통하여 DLC 박막의 depth Profile을 확인하였다.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2002.05a
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• pp.13-22
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• 2002

This paper presents characteristics of CrOx thin-film Strain gauge pressure sensors, which were deposited on SUS630 diaphragm by DC reactive magnetron sputtering in an argon-Oxide atmosphere(Ar-(10%)$O_2$). The optimized condition of CrOx thin-film strain gauges were thicknessrange of 2500$\AA$ and annealing condition ($350^{\circ}C$, 3 hr) in Ar-10 %$O_2$deposition atmosphere. Under optimum conditions, the CrOx thin-films for strain gauge is obtained a high resistivity, $\rho$=156.7$\mu$$\Omega$cm, a low temperature coefficiect of resistance, TCR=-86 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 15. The output sensitivity of pressure sensor obtained is 2.46㎷/V and the maximum non-linearity is 0.3%FS and hysteresis is less than 0.2%FS. The output characteristics of pressure transmitter obtained is 4~20㎃ and total accuracy is less than $\pm$0.5%FS. In those conclusions, CrOx thin film pressure sensors is quite satisfactory for many applications in industrial electronics.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.620-623
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• 2003

The material processing by using ultrashort pulse laser, in recently, is actively applying into the micro machining and nano-machining technology since ultrashort pulse has so faster than the time which the electrons energy absorbing photon energy is transmitted to surrounding lattice-phonon that it has many advantages in point of machining. The micro machining of metallic thin film on the plain glass is widely used in the fields such as mask repairing for semiconductor, fabrication of photonic crystal, MEMS devices and data storage devices. Therefore, it is important to secure the machining technology of the sub-micron size. In this research, we set up the machining system by using ultrashort pulse laser and conduct on the Cr 200nm thin film ablation experiments of spot and line with the variables such as energy, pulse number, speed, and so on. And we observed the characteristics of surrounding heat-affected zone and by-products appeared in critical energy density and higher energy density through SEM, and also examined the machining features between in He gas atmosphere which make pulse change minimized by nonlinear effect and in the air. Finally, the pit size of 0.8${\mu}{\textrm}{m}$ diameter and the line width of 1${\mu}{\textrm}{m}$ could be obtained.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.534-540
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• 2006

Thin films of $V_2O_3$, $VO_2$, and $V_2O_5$ were obtained from a single precursor solution through post-annealing processes under different annealing conditions. As annealed in air, the deposited films became $V_2O_5$ with orthorhombic crystal structure, while they were $V_2O_3$ and $VO_2$ with rhombohedral and monoclinic crystal structure as annealed in vacuums with base pressure of $1{\times}10^{-6}$ Torr and with 10 mTorr $O_2$ pressure, respectively. Electrical and optical measurements indicated that the $V_2O_5$ and $VO_2$ films are semiconducting, while the $V_2O_3$ films are metallic at room temperature. Chromium doping in $VO_2$ resulted in a decrease of the resistivity and changed the conduction type from n-type to p-type. 10% Cr-doped $VO_2$ films were found to have orthorhombic crystal structure, which is different from that of the undoped $VO_2$. Spectral features in the optical absorption spectra of all the films were interpreted as the transitions involving O 2p and V 3d bands. The crystal-field splittings between $t_{2g}$ and $e_g$ states of the V 3d bands are estimated to be about 1.5 and 1.0 eV for $V_2O_5$ and $VO_2$, respectively.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.653-656
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• 2004

We report the magnetic properties, microstructures, and crystal orientations of the CrO$_2$ thin films on TiO$_2$ single crystals. CrO$_2$ thin films were deposited by thermal decompositions with CrO$_3$ source materials. The microstructure of (110) oriented CrO$_2$ thin films deposited on (110) TiO$_2$ single crystals were uniform. As the oxygen flow rates increased, the resistivity, coercive field, and remnant magnetization of the CrO$_2$ thin films on TiO$_2$ single crystals decreased.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.98-105
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• 2003

반도체 집적회로 제조 장치의 부품으로 사용되는 전도성 발열체를 박막형태로 제조하는 기술을 얻기 위하여 반도체와 금속을 혼합한 물질을 스퍼터 증착 기술 및 전자빔 증착기술을 이용하여 제작하고, 전기적, 재료적 특성을 분석하였다. 발열재료로는 몰리부덴과 실리콘 및 크롬 및 실리콘의 합금을 이용하였으며, 기판 물질은 알루미나와 실리콘질화막. 시리콘 산화막을 사용하였다. 발열물질은 온도의 상승파 하강에도 안정된 재료적 성질을 가져야 제품으로써 신뢰도를 유지할 수 있으므로 금속 (몰리부텐 또는 크롬) 실리사이드 (silicide)의 최종 phase 를 갖도록 하였는데, 실리사이드는 실리콘과 금속의 합금물질로 안정된 재료로 알려져 있다. 또한 발열재료의 온도저항계수를 최소화하도록 하였으며 온도저한계수 값의 범위가 20% 이내인 발열재료의 제조기술을 얻었다. 이러한 온도저항계수 최소화는 열교환 부품의 온도 정밀제어를 가능하게 한다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.126-126
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.343-346
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• 1997

This paper presents the basic characteristics of Cr thin-film, which were deposited on glass by DC magnetron sputtering. The optimized deposition condition of Cr thin-film strain gauges were input power 7w/cm$^2$and the Ar working pressure was 9mtorr. GF(Gauge Factor), TCR(Temperature Coefficient of Resistance) and TCS(Temperature Coefficient of Sensitivity) of Cr thin-film strain gauges were 5.86, 400 ppm/$^{\circ}C$ and 0 ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1053-1057
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• 1997

Laser thin film process with a Q-switch pulsed YAG laser was performed for micro machining. In this research, we performed basic Cr thin film on glass substrates removal machining experiments. Form experiments, it happens not only evaporration of thin film but also spatter and cohesion of melting substance in working region, when machining a Cr thin film by Q-switch YAG laser beam irradiation. Critical energy of surface irradiation type by irradiation direction of laser in a face composing thin film on the glass is higher than that of back irradiation type, but the latter is favorable because of spatter appearance. In case of image formation position when laser beam is irradiated, the defocus is permitted to a certain extent within forcus depth. Ifexceeds focus depth, formation of pattern is vanishing step by step.