• Journal of the Institute of Convergence Signal Processing
• /
• v.9 no.1
• /
• pp.10-17
• /
• 2008

The purpose of this thesis is to reduce of error for source location through acoustic emission(AE) signal, generated elastic wave from crack growth to leak for facility diagnosis. Especially, in order to overcome noise from original signal, this paper proposed enhancement of source location by using noise reduction based on wavelet transform. To evaluate actual performance in experiments, Pencil Lead Break is used crack signal source on the aluminum plate and drain valve of air compressor is used as substitute pressure vessel to generate leak signal. In signal processing, wavelet shrinkage and soft threshold are used to discriminate signal source and then source location techniques have been effectively used with group velocity using material property and time difference between sensor using cross correlation. Source location for crack and leak test have some difference, but the result show that improved 30% with a average length within 10.46mm in crack test and improved 2% compare with average filter in leak test when we applied wavelet transform.

• Elastomers and Composites
• /
• v.37 no.2
• /
• pp.86-98
• /
• 2002

The application of silica/carbon black dual phase fillers to natural rubber(NR) compound was investigated. When the amounts of filler content were restricted to 60phr, the optimum ratio of dual phase fillers were 25phr/35phr of silica/carbon black. It was found that these new fillers give better overall performance in comparison with carbon black in tear strength, crack resistance, and cutting resistance. Also the thermal degradation resistance of NR vulcanizates which were filled with dual phase fillers was better than that of the carbon black. Dual phase fillers filled NR vulcanizates showed better viscoelastic properties, like tan${\delta}$, for the wet skid resistance and rolling resistance of motor vehicle tires.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
• /
• 2002.10a
• /
• pp.341-346
• /
• 2002

In this study, an effect that compressive residual stress formed by shot-peening the surface of spring steel(JISG SUP-9) at each shot velocity(1800, 2200, 2600, 3000rpm) on the fatigue crack growth property and threshold stress intensity factor, ${\Delta}K_{th}$, was examined. Followings are the result (1) Compressive residual stress on surface of specimen was determined at each -601 MPa(1800rpm), -638 MPa(2200rpm), -587 MPa (2600rpm), -550 MPa(3000rpm) by shot velocity of shot peening and threshold stress intensity factor, ${\Delta}K_{th}$, fatigue crack growth rate, da/dN, on fatigue crack growth is obstructed by the compressive residual stress was determined at each $5.619\;MPa\sqrt{m}$(Un-peening), $8.319\;MPa\sqrt{m}$(1800rpm), $8.797\;MPa\sqrt{m}$(2200rpm), $7.835\;MPa\sqrt{m}$(2600rpm), $7.352\;MPa\sqrt{m}$(3000rpm) (2) Existing compressive residual stress by effect of shot velocity of shot-peening on relation of crack length. a, and number of cycle, N, was 2 times progressed in case of 2200rpm than specimen of Un-peening on fatigue life. And fatigue life was 1.6 times progressed incase of 3000rpm by Over peening. (3) Fatigue life of Material on Paris' law, $da/dN=C({\Delta}K)^m$, that effect of material constant, C, and fatigue crack growth exponent, m, was influenced by effect of. C and m.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.32 no.1
• /
• pp.1-6
• /
• 2022

In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical Vapor Transport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindrical graphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiC single crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasma etching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring, indicating better plasma resistance of PVT-SiC focus ring.

• Korean Journal of Materials Research
• /
• v.8 no.6
• /
• pp.538-544
• /
• 1998

The spallation of a thermal barrier coating layer depends on the formation of brittle spinels. thermal expansion mismatch between ceramic and metal. the phase transformation of a ceramic layer and residual stress of coating layer. In this work. the formation mechanism of oxide scale formed by oxidation treatment at 90$0^{\circ}C$ was investigated in order to verify oxidation behavior at the interface between E-beam coated $Zr0_2$-7wt.% $Y_20_3$ and plasma sprayed CoNiCrAIY. Some elements distributed in the bond coating layer were selectively oxidized after oxidation. At the initial time of oxidation. AI-depletion zone and $\alpha$-$Al_O_3$,O, were formed at the bond coating layer by the AI-outward diffusion. After layer grew until critical thickness. spinels. $Cr_20$, and $C0_2CrO_4$ by outward diffusion of Co. Cr, Ni were formed. It was found that the formation of spinels may be related to the spallation of $Zr0_2$-7wt.% $Y_20_3$ during isothermal oxidation.