• Title/Summary/Keyword: 카드뮴 텔루라이드

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Manufacture of Inorganic Materials Thin Film Solar Cell using Titanium Dioxide (이산화티타니움을 사용한 무기질 박막형 태앙전지의 제작)

  • Lee, Kyung-Ho
    • The Journal of the Korea Contents Association
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    • v.9 no.10
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    • pp.451-463
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    • 2009
  • The purpose of this research is to develop thin film materials and fabrication process for efficient $TiO_2$/CdTe solar cells. In this work photocatalyst titanium dioxide was prepared by sol-gel procedure according to reaction condition, the mole ratio of $H_2O$/TTIP, pH of solution and aging condition of powder. The prepared titanium dioxide was thermally treated from 300 to $750^{\circ}C$. Maximum intensity of anatase phase of titanium dioxide was achieved by calcination at $600^{\circ}C$ for 2 hr. And it was mixture of anatase and rutile phase when temperature of calcination was $750^{\circ}C$. It has been known that the properties of synthesized titanium dioxide according to aging time and calcination temperature was converted to anatase phase crystal on increasing of aging time. Also the current density has been increased with aging time and temperature, the efficiency has been increased with because of reason on above results. The formation of chemical bonding on oxygen and cadmium telluride under oxygen circumstances had been observed, and oxygen of thin film surface on cadmium telluride had been decreased with the treatment of chromate and hydrazine. As results had been shown that the energy conversion efficiency of cadmium telluride use by rapidly treatmented heat at the condition of $550^{\circ}C$ under air circumstance got 12.0%, 6.0% values according to $0.07cm^2$, $1.0cm^2$ surface area, respectively.

A study on the capacitance-voltage characteristics of the CdZnS/CdTe heterojunction (CdZnS/CdTe 이종접합의 커패시턴스-전압 특성에 관한 연구)

  • Lee, Jae-Hyeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.6
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    • pp.1349-1354
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    • 2011
  • In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

A study on the electrical characteristics of CdZnS/CdTe heterojunction (CdZnS/CdTe 이종접합의 전기적 특성에 관한 연구)

  • Lee, Jae-Hyeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.7
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    • pp.1647-1652
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    • 2010
  • A CdS film has been used as a window layer in CdTe and Cu(In,Ga)$Se_2$ thin films solar cell. Partial substitution of Zn for Cd increases the photocurrent and the open-circuit voltage by providing a match in the electron affinities of the two materials and the higher band gap. In this paper, CdZnS/CdTe and CdS/CdTe heterojunctions were fabricated and the electrical characteristics were investigated. Current-voltage-temperature measurements showed that the current transport for CdS/CdTe heterojunction was controlled by both tunneling and interface recombination. However, CdZnS/CdTe heterojunction displayed different current transport mechanism with the operating temperature. For above room temperature, the current transport of device was generation/recombination in the depletion region and was the leakage current and/or tunneling in the range below room temperature.

Diagnostic X-ray Spectra Detection by Monte Carlo Simulation (진단용 X-선 스펙트럼의 몬테칼로 전산모사 측정)

  • Baek, Cheol-Ha;Lee, Seung-Jae;Kim, Daehong
    • Journal of the Korean Society of Radiology
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    • v.12 no.3
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    • pp.289-295
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    • 2018
  • Most diagnostic devices in the medical field use X-ray sources, which emit energy spectra. In radiological diagnosis, the quantitative and qualitative analyses of X-rays are essential for maintaining the image quality and minimizing the radiation dose to patients. This work aims to obtain the X-ray energy spectra used in diagnostic imaging by Monte Carlo simulation. Various X-ray spectra are simulated using a Monte Carlo simulation tool. These spectra are then compared to the reference data obtained with a tungsten anode spectral model using the interpolating polynomial (TASMIP) code. The X-ray tube voltages used are 50, 60, 80, 100, and 110 kV, respectively. CdTe and a-Se detector are used as the detectors for obtaining the X-ray spectra. Simulation results demonstrate that the various X-ray spectra are well matched with the reference data. Based on the simulation results, an appropriate X-ray spectrum, in accordance with the tube voltage, can be selected when generating an image for diagnostic imaging. The dose to be delivered to the patient can be predicted prior to examination in the diagnostic field.