• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.20-21
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• 2002

최근 자성 박막의 연구에 있어서 이웃한 두 자성체 층 간의 교환 상호 결합 작용(interlayer exchange coupling)은 매우 중요한 연구 분야중 하나이다. 80년대 말 처음 강한 층간 교환 상호 결합 작용이 발견된 이래로, 비자성 사이 층의 두께에 따라서 층간 교환 상호 작용이 요동하는 현상과 더불어서 소위 거대 자기 저항(giant magnetoresistance)이라고 불리는 현상의 발견은 자성 박막의 나노 시대를 열었다고 해도 과언이 아니었다. (중략)

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.194-194
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• 2010

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.258-264
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• 1997

Exchange and interlayer couplings between a NiFe ferromagnetic layer and an antiferromagnetic NiO layer in NiO/NiFe/Cu/NiFe spin-valve films prepared by rf/dc magnetron sputtering were investigated. The interlayer coupling field ($H_{int}$ decreased with the Cu layer thickness, and the exchange coupling field $(H_{ex}$ saturated to 90 Oe. the magnetitudes of $H_{ex}$ and $H_{int}$ decreased with increasing thickness of the pinned NiFe layer. The increase of $H_{int}$ with the free NiFe layer may be due to the increased magnetization.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.130-131
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.147-147
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• 2015

• Proceedings of the Korean Magnestics Society Conference
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• 2014.05a
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• pp.112-112
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• 2014

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.130-135
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• 2006

We theoretically demonstrate that the interlayer exchange coupling (IEC) energy can be manipulated by means of an external bias voltage in a $F_1/NM/F_2/S$$(F_1:ferromagnetic,\;NM:nonmagnetic\;metallic,\;F_2:ferromagnetic,\;S:semiconductor\;layers)$ four-layer system. It is well known that the IEC energy between two ferromagnetic layers separated by nanometer thick nonmagnetic layer depends on the spin-dependence of reflectivity to the $F_1/NM/F_2/S$ four-layer system, where the reflectivities at the interface in $NM/F_2$ interface also depends on $F_2/S$ interface due to the multiple reflection of an electron-like optics. Finally, the IEC energy depends on the spin-dependent electron reflectivity not only at the interfaces of $F_1/NM/F_2$, but also at the interface of $F_2/S$. Naturally the Schottky barrier is formed at the interface between metallic ferromagnetic layer and semiconductor, the Schottky barrier height and thickness can be tailored by an external bias voltage, which causes the change of the spin-dependent reflectivity at $F_2/S$ interface. We show that the IEC energy between two ferromagnetic layers can be controlled by an external bias voltage due ti the electron-optics nature using a simple free-electron-like one-dimensional model.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.203-209
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.146-148
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• 2012

미크론 자성비드 검출용 바이오센서에 활용하는 GMR-SV 박막을 이온빔 스퍼터링 증착법으로 glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm)의 구조를 갖도록 증착하였다. 비자성체 Cu의 두께가 3.0 nm에서 2.2 nm까지 얇아질수록 교환결합력은 증가하였으며 자기저항비는 다소 낮았다. 비자성체의 두께가 얇으면 반강자성체의 층간 교환작용이 강자성체의 고정층 뿐만 아니라 자유층의 스핀배열에도 영향을 주고 있음을 확인할 수 있었다. 또한 리소그래피 공정 과정을 거쳐 GMR-SV 소자를 제작하여 미트론 자기비드를 검출하였다. 여기서 자기비드를 떨어뜨리기 전과 후의 자기저항비, 교환결합력, 보자력은 각각 0.9%, 3 Oe, 2 Oe의 값을 나타내었다. 이것으로 미크론단위의 바이오센서로서 활용할 수 있는 가능성을 보여주었다.

• The Journal of Engineering Research
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• v.7 no.1
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• pp.79-87
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• 2005

[TEACOOH]-Montmorillonite intercalations complex obtained from Na-Montmorillonite and 10-Carboxy-n-decyldimethylethylammonium bromide(organic cation) was reacted with the monomer($\varepsilon$-caprolactone) to achieve the [TEACOOH]-$\varepsilon$-caprolactone-Montmorillonite intercalations complex. From intercalations complex Montmorillonite/Polycaprolactone Nanocomposite in which montmorillonite(inorganic material) is chemically linked with the polycaprolactone(organic polymer) was formed at $220^{\circ}C$ for 48 h. The basal spacing for the sample obtained after polymerization, extraction with methanol and dried at $65^{\circ}C$ in high vacuum for 24 h was 50.7 $\AA$.