• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.130-131
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• 2001

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.175-177
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• 1999

Hg-1223 박막에서의 비저항(${\rho}$)을 임계온도 근처에서 은도와 자기장의 세기의 변화에 따라 측정하였다. 전도도(${\sigma}$)의 임계요동 부분은 3차원-XY 모델과 일치하는 임계현상을 보였다. 동적임계지수 z값은 1.5${\pm}$0.1로써 YBCO에서와 같았다. 정적임계지수 v값은 1.19${\pm}$0.3으로 YBCO에서보다 더 컸으며, 이것은 Hg-1223의 c축을 따라 층간의 약한결합 정도가 z값에는 영향을 미치지 않고, v값을 크게 증가시키는 것을 보여준다.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.186-193
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• 2006

In this study, we analyzed the electrical and optical properties of metalorganic chemical vapor deposition grown InGaAs/InGaAsP/InP quantum dot(QD) molecules by using photoluminescence and deep-level transient spectroscopy. From these resulte, the energy levels of the large QDs are located at deeper region from the conduction band edge of the barrier than that of the small QDs, The large QDs seem to have the energy states more than two, and these energy levels of the QD molecules are located at 0.35, 0.42, and 0.45 eV from conduction band edge under -4 V reverse bias conditions. The energy levels are closely coupled under low reverse bias, and then decoupled as the bias voltage is increased.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.265-273
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• 1997

The MR ratios and the exchange biasing field and interlayer coupling field were investigated in $Ni_{91}Fe_{19}/Co_{90}Fe_{10}/Cu/Co_{90}Fe_{10}/NiO$ spin-valve sandwiches grown on antiferromagnetic NiO films as a function of the NiO thickness, the thickness of Cu and pinning layer $Co_{90}Fe_{10}$. The spin-valve sandwiches were deposited on the Corning glass 7059 by means of the 3-gun dc and 1-gun rf magnetron sputtering at a 5 mtorrpartial Ar pressure and room temperature. The deposition field was 50 Oe. The MR curve was measured by the four-terminal method with applied magnetic soft bilayer [NiFe/CoFe] (90$\AA$) decreased dramatically to less than 10 Oe when the NiFe/CoFe bilayer used an NiFe bilayer thicker that 20$\AA$. So NiFe layer improved the softmagnetic properties in the NiFe/CoFe bilayer. The GMR ratio and the magnetic field sensitivity of the spin-valve film $Ni_{91}Fe_{19}(40{\AA})/Co_{90}Fe_{10}(50{\AA}) /Cu(30{\AA})/Co_{90}Fe_{10}(35{\AA})/NiO(800{\AA})$ was 6.3% and about 0.5 (%/Oe), respectively. The MR ratio had 5.3% below an annealing temperature of 20$0^{\circ}C$ which slowly decreased to 3% above 30$0^{\circ}C$. The large blocking temperature of the spin-valve film was taken (as being) due to the good stability of the NiO films. Thus, the spin-valve films with a free NiFe/CoFe layer clearly had a high large GMR output and showed a effective magnetic field sensitivity for a suitable spin-valve head material.

• Journal of the Mineralogical Society of Korea
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• v.29 no.4
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• pp.209-220
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• 2016

Clay minerals are a major player to determine geochemical cycles of trace metals and carbon in the critical zone which covers the atmosphere down to groundwater aquifers. Molecular dynamics (MD) simulations can examine the Earth materials at an atomic level and, therefore, provide detailed fundamental-level insights related to physicochemical properties of clay minerals. In the current study, we have applied classical MD simulations with clayFF force field to dioctahedral clay minerals (i.e., gibbsite, kaolinite, and pyrophyllite) to analyze and compare structural parameters (lattice parameter, atomic pair distance) with experiments. We further calculated vibrational power spectra for the hydroxyls of the minerals by using the MD simulations results. The MD simulations predicted lattice parameters and interatomic distances respectively deviated less than 0.1~3.7% and 5% from the experimental results. The stretching vibrational wavenumber of the hydroxyl groups were calculated $200-300cm^{-1}$ higher than experiment. However, the trends in the frequencies among different surface hydroxyl groups of each mineral was consistent with experimental results. The angle formed by the surface hydroxyl group with the (001) plane and hydrogen bond distances of the surface hydroxyls were consistent with experimental result trends. The inner hydroxyls, however, showed results somewhat deviated from reported data in the literature. These results indicate that molecular dynamics simulations with clayFF can be a useful method in elucidating the roles of surface hydroxyl groups in the adsorption of metal ions to clay minerals.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.120-123
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• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.