• Title/Summary/Keyword: 촉매습식과산화

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1,4-Dioxane Decomposition by Catalytic Wet Peroxide Oxidation using Cu Wire Catalysts (Cu wire 촉매를 이용한 촉매습식과산화공정에 의한 1,4-다이옥산의 분해)

  • Lee, Dong-Keun;Kim, Dul Sun
    • Clean Technology
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    • v.22 no.4
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    • pp.281-285
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    • 2016
  • Cu wire catalyst was highly reactive toward catalytic wet peroxide oxidation of the highly refractory 1,4-dioxane. While complete removal of 1,4-dioxane could be achieved with the catalyst, the removed 1,4-dioxane could not totally mineralized into $CO_2$ and $H_2O$. In accordance with the disappearance of 1,4-dioxane, formaldehyde and oxalic acid were formed gradually with reaction time and they went through maxima. At around the time of maximum concentrations of these two intermediates acetaldehyde concentration was increased drastically and showed maximum value. With the disappearance of these three intermediates, formic acid together with ethylene glycol diformate began to increase gradually. The Cu wire catalyst was proved also to be highly stable against deactivation during the reaction.

Decomposition of Sulfamethoxazole by Catalytic Wet Peroxide Oxidation (촉매습식과산화(CWPO)를 이용한 설파메톡사졸의 분해)

  • Kim, Dul Sun;Lee, Dong-Keun;Kim, Jin Sol
    • Clean Technology
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    • v.24 no.4
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    • pp.293-300
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    • 2018
  • Sulfamethoxazole (SMX) is sulfaamide-based synthetic antibiotics, which are widely prescribed pharmaceutical compound to treat bacterial infections in both human and animals. Most of them are not completely decomposed as refractory substances. The environmental impact of pharmaceuticals as emerging contaminants has generated severe concerns. In this study, catalytic wet peroxide oxidation (CWPO) of SMX was carried out with $Cu/Al_2O_3$ catalyst and investigated the optimum reaction conditions of temperature, dosage of catalyst and concentration of $H_2O_2$ to completely decompose the SMX. It was observed that SMX was completely decomposed within 20 min using 0.79 mM $H_2O_2$ and 6 g $Cu/Al_2O_3$ catalyst at 1 atm and $40^{\circ}C$, but SMX was not fully mineralized and converted to intermediates as hydroylated-SMX, sulfanilic acid, 4-aminobenzenesulfinic acid and nitrobenzene. After that these are completely mineralized through organic acid. We proposed the decomposition reaction path ways of SMX by analyzing the behavior of these intermediates. To investigate the durability of heterogeneous catalyst, decomposition of SMX was observed by continuously recycling catalysts. When the heterogeneous catalyst of 10 wt% $Cu/Al_2O_3$ was continuously reused 5 times, decomposition of SMX was a little lowered, but the activity of catalyst was overall very stable.

증발증착법에 의해 형성된 금속 입자를 이용한 단결정 실리콘의 습식식각

  • Go, Yeong-Hwan;Ju, Dong-Hyeok;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.438-438
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    • 2012
  • 은(Ag) 또는 금(Au) 입자를 촉매로 이용하여 습식식각을 통해 선택적으로 짧은 시간동안 단결정 실리콘 웨이퍼의 표면을 텍스쳐링하여 반사방지막 특성을 효과적으로 얻을 수 있다. 일반적으로 금속입자는 주로 금속 이온이 포함된 용액이나, 전기증착법을 통해서 실리콘 웨이퍼 표면에 형성시켰지만, 금속입자의 크기와 분포를 조절하기 어려웠다. 하지만, 최근 진공장비를 이용하여 열증발증착법(thermal evaporation)과 급속열처리법(rapid thermal annealing)을 통해서 금속입자를 대면적으로 크기와 분포를 균일하게 조절할 수 있다. 이러한 현상은 열적 비젖음(thermal dewetting) 현상에 의해 실리콘 표면위에 증착된 금속 박막으로부터 나노입자로 형성할 수 있다. 본 연구에서는 실리콘 (100)기판위에 다양한 크기의 은 또는 금 나노입자를 형성시켜 식각용액에 짧은 시간동안 담그어 식각하여, 텍스쳐링 효과와 반사방지(antireflection) 특성을 분석하였다. 실험을 위해 각각 은 또는 금 박막을 열증발증착법을 이용하여 ~3-8 nm의 두께로 형성시켰으며, 급속가열장치를 이용하여 $500^{\circ}C$에서 5분 동안 열처리하였다. 그리고 탈이온수(de-ionized water)에 불화수소와 과산화수소가 혼합된 식각용액에 1-5분 동안 습식식각을 하였다. 각각의 텍스쳐링 된 샘플의 식각의 상태와 깊이를 관찰하기 위해 field emission scanning electron microscopy (FE-SEM)을 이용하여 측정하였으며, UV-vis-NIR spectrophotometer를 이용하여 300 nm에서 1,200 nm의 반사특성을 분석하였다. 또한 RCWA (rigorous coupled wave analysis) 시뮬레이션을 이용하여 텍스쳐링 된 기하학적구조에 대하여 반사방지막 특성을 이론적으로 분석하였다.

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Improved Antireflection Property of Si by Au Nanoparticle-Assisted Electrochemical Etching (금 나노입자 촉매를 이용한 단결정 실리콘의 전기화학적 식각을 통한 무반사 특성 개선)

  • Ko, Yeong-Hwan;Joo, Dong-Hyuk;Yu, Jae-Su
    • Journal of the Korean Vacuum Society
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    • v.21 no.2
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    • pp.99-105
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    • 2012
  • We fabricated the textured silicon (Si) surface on Si substrates by the electrochemical etching using gold (Au) nanoparticle catalysts. The antireflective property of the fabricated Si nanostructures was improved. The Au nanoparticles of ~20-150 nm were formed by the rapid thermal annealing using thermally evaporated Au films on Si. In the chemical etching, the aqueous solution containing $H_2O_2$ and HF was used. In order to investigate the effect of electrochemical etching on the etching depth and reflectance characteristics, the sample was immersed in the aqueous etching solution for 1 min with and without applied cathodic voltages of -1 V and -2 V. As a result, the solar weighted reflectance, i.e., the averaged reflectance with considering solar spectrum (air mass 1.5), could be efficiently reduced for the electrochemically etched Si by applying the cathodic voltage of -2 V, which is expected to be useful for Si solar cell applications.