• Title/Summary/Keyword: 초고주파 스위치

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Suppression of Microwelding on RF MEMS Direct Contact Switches (직접접촉식 RF MEMS 스위치에서의 미소용접 현상 억제)

  • Lee, Tae-Won;Kim, Seong-Jun;Park, Sang-Hyun;Lee, Ho-Young;Kim, Yong-Hyup
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.4
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    • pp.41-46
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    • 2005
  • In this paper, a new method for suppressing microwelding on the RF MEMS (Radio Frequency Microelectromechanical System) direct contact switches is introduced. Two kinds of refractory metals, tungsten and molybdenum were coated onto the contact point of the switches and the effect of the coating was examined. The changes in insertion loss and isolation at the switch were measured by using network analyzer and power loss was evaluated by power measurement. The results revealed that while tungsten and molybdenum showed higher contact resistance than gold in low input power range, they enhanced the power handling capability and reliability of the switches in high input power region.

Design of MMIC SPST Switches Using GaAs MESFETs (GaAs MESFET을 이용한 MMIC SPST 스위치 설계)

  • 이명규;윤경식;형창희;김해천;박철순
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.27 no.4C
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    • pp.371-379
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    • 2002
  • In this paper, the MMIC SPST switches operating from DC to 3GHz were designed and implemented. Prior to the design of switches, the small and large-signal switch models were needed to predict switch performance accurately. The newly proposed small-signal switch model parameters were extracted from measured S-parameters using optimization technique with estimated initial values and boundary limits. In the extraction of large-signal switch model parameters, the current source was modeled by fitting empirical equations to measured DC data and the charge model was derived from extracted channel capacitances from measured S-parameters varying the drain-source voltage. To design basic series-shunt SPST switches and isolation-improved SPST switches, we applied this model to commercial microwave circuit simulator. The improved SPST switches exhibited 0.302dB insertion loss, 35.762dB isolation, 1.249 input VSWR, 1.254 output VSWR, and about 15.7dBm PldB with 0/-3V control voltages at 3GHz.

Design of Absorptive Type SPST MMIC Switch for MSM of Satellite Communication (위성통신용 MSM을 위한 흡수형 SPST MMIC 스위치의 설계 및 제작)

  • Yom In-Bok;Ryu Keun-Kwan;Shin Dong-Hwan;Lee Moon-Que;Oh Il-Duck;Oh Seung-Hyeub
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.10 s.101
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    • pp.989-994
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    • 2005
  • A MMIC(Monolithic Microwave Integrated Circuit) switch chip using InGaAs/GaAs p-HEMT process has been designed for MSM(Microwave Switch Matrix) of satellite communication system. An absorptive type MMIC switch is adopted for good reflection coefficients performances of input and output ports at both on and off states. And, a quarter wavelength impedance transformer is realized with lumped elements of MIM capacitor and spiral inductor for 3 GHz band to reduce the chip size. This MMIC switch covers the frequency range of $3.2\~3.6\;GHz$. According to the on-wafer measurement, the fabricated MMIC switch with miniature size of $1.6\;mm{\times}1.3\;mm$ demonstrates insertion loss below 2 dB and isolation above 56.8 dB, and the performance coincides with simulation results.

Receiver for Ku-band Compact Doppler Radar (Ku-대역 소형 도플러 레이다용 수신부)

  • Lee, Man-Hee;An, Se-Hwan;Kim, Youn-Jin;Kim, Hong-Rak;Jeong, Hae-Chang;Kim, Sun-Ho
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.20 no.1
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    • pp.89-93
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    • 2020
  • In this paper, Ku-band Receiver for compact doppler radar has been designed and fabricated. It composed of MWR(Microwave Receiver) and IFR(Intermediate Frequency Receiver) which have 5 receive path. We applied limiter circuit to protect MWR from Tx leakage power and maximum 2 W. IFR can change the Rx path to broad band or narrow band by MSC(Mode Selection Switch). It is observed that fabricated receiver performs 68 dB gain and 3.7 dB noise figure, 93 ns limiter recovery time. Proposed Ku-band receiver is expected to apply for Ku-band compact doppler radar.

MEMS Probes for Permittivity Measurement (유전율 측정을 위한 MEMS 프로브)

  • Jeong Geun-Seok;Jeong Eum-Min;Kim Jung-Mu;Park Jae-Hyoung;Cho Jei-Won;Cheon Chan-Yul;Kim Yong-Kweon;Kwon Young-Woo
    • 한국정보통신설비학회:학술대회논문집
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    • 2004.08a
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    • pp.226-229
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    • 2004
  • 본 논문은 초고주파 영역에서 개방 단말 동축선을 대신해서 복소 유전율을 측정할 수 있는 MEMS 프로브와 그 응용예로 MEMS 프로브 어레이를 제안한다. MEMS 프로브는 기존의 동축선 프로브와 달리 커넥터와의 연결이 간단하여 일회용으로 프로브를 사용할 수 있다는 점에서 의료용으로 사용할 수 있는 가능성이 있다. 샘플의 유전율 분포를 구하기 위해서 기존의 센서는 반복 접촉을 요구하고 이로 인한 번거로움과 측정 오차를 줄일 목적으로 MEMS 프로브 어레이를 개발 하였다. MEMS 프로브 어레이는 RF 스위치를 사용하여 다수의 측정 포인트를 한번의 센서 접촉으로 측정할 수 있는 새로운 개념의 프로브이다. 1GHz부터 40GHz까지의 광대역에서 0.9% 식염수의 유전율을 측정하여 MEMS 프로브의 성능을 검증하였다.

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RF Technology for Satellite Payload (위성탑재체 RF 기술동향)

  • Jeong, J.C.;Yum, I.B.
    • Electronics and Telecommunications Trends
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    • v.21 no.4 s.100
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    • pp.107-117
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    • 2006
  • 위성 탑재체 제조 산업은 기초 과학이 뒷받침된 초정밀 기계 공학, 첨단 전자 기술, 극한 환경 기술 및 신소재 공학 등과 같은 첨단 산업의 집합체라 할 수 있다. 현재 미국을 비롯한 서구 선진국에서 진행중인 탑재체 기술동향을 보면, 폭발적으로 증가하는 위성수에 따라 위성 궤도가 부족하고 주파수 자원이 고갈되고 있는 상황에서 통신 위성의 효율성과 성능을 향상시킬 수 있는 신호처리 탑재(OBP) 위성과 통신기능을 포함한 다양한 기능을 가진 복합위성 개발이 진행되고 있으며 주파수 대역의 포화와 광대역 멀티미디어 서비스 제공 등을 위해 보다 높은 주파수의 준 밀리미터파 대역(Ka 대역) 위성 개발이 활발히 이루어지고 있다. 국내에서는 현재, 2008년 발사를 목표로 마이크로스위치 매트릭스(MSM)가 탑재되어 빔간 스위칭이 가능하도록 설계된 통신해양기상위성(COMS)용 통신 탑재체(SACOM) 개발이 진행중이다. 국내의 위성탑재용 RF 부품분야는 1990년부터 위성 중계기 시스템의 기본적인 설계, 조립, 종합화, 시험기술을 바탕으로 통신위성 탑재체용 초고주파 부품을 개발하여 왔으며, 2000년대에는 Ku 대역(12/14GHz) 및 Ka 대역(20/30GHz) 기술인증모델(EQM) RF 부품을 성공적으로 개발하였다. 이를 바탕으로 통신해양기상위성 통신탑재체용 Ka 대역 RF 부품이 현재 우주인증 모델(QM)의 개발이 완료되었으며 비행 모델(FM) 개발이 진행중이다.

A Reconfigurable Active Array Antenna System with Reconfigurable Power Amplifiers Based on MEMS Switches (MEMS 스위치 기반 재구성 고출력 증폭기를 갖는 재구성 능동 배열 안테나 시스템)

  • Myoung, Seong-Sik;Eom, Soon-Young;Jeon, Soon-Ik;Yook, Jong-Gwan;Wu, Terence;Lim, Kyu-Tae;Laskar, Joy
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.4
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    • pp.381-391
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    • 2010
  • In this paper, a novel frequency reconfigurable active array antenna(RAA) system, which can be reconfigurable for three reconfigurable frequency bands, is proposed by using commercial RF MEMS switches. The MEMS switch shows excellent insertion loss, linearity, as well as isolation. So, the system performance degradation of the reconfigurable system by using MEMS switches can be minimized. The proposed frequency reconfigurable active antenna system is consisted with the noble frequency reconfigurable front-end amplifiers(RFA) with the simple reconfigurable impedance matching circuits(RMC), reconfigurable antenna elements(RAE), as well as a reconfiguration control board(RCB) for MEMS switch control. The proposed RAA system can be reconfigurable for three frequency bands, 850 MHz, 1.9 GHz, and 3.4 GHz, with $2{\times}2$ array of the RAE having broadband printed dipole antenna topology. The validity of the proposed RFA as well as RAA is also presented with the experimental results of the fabricated systems.