• Title/Summary/Keyword: 초고주파 센서

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초고주파 라디오미터 센서를 이용한 적조 관측 실험

  • 김용훈;김성현;박혁;최준호;이호진;최승운;최재연;서승원
    • Proceedings of the Korean Association of Geographic Inforamtion Studies Conference
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    • 2004.03a
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    • pp.449-454
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    • 2004
  • 심각한 환경문제인 적조 피해를 줄이기 위해서 효과적인 모니터링 기술이 절실히 요구되고 있다. 본 연구에서는 초고주파 라디오미터 센서를 이용한 효과적인 적조 모니터링에 대한 가능성을 조사하였다. 초고주파 라디오미터를 이용해 관측되는 밝기 온도의 차이로 적조 해수를 모니터링 할 수 있다는 아이디어에 기반하여 연구를 수행하였다. 본문에서는 이론적인 배경과 가능성 확인을 위한 실험과정, 결과가 서술되어 있다 실제 해양에서의 측정 실험에서 적조지역의 밝기 온도가 청정지역의 밝기 온도보다 높게 측정되었다. 결론으로, 본 연구를 통하여 초고주파 라디오미터를 이용한 적조 모니터링이 가능함을 확인하였다.

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A Study on the Optical Axis Alignment of Missile using the Dual-Mode Sensor (이중 센서를 이용한 유도탄 광축 정렬 연구)

  • Han, Seokchoo;Koh, Sanghoon;Yun, Kyungsub;Park, Donghyun
    • Journal of the Korea Institute of Military Science and Technology
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    • v.20 no.3
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    • pp.337-344
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    • 2017
  • In this paper, the optical axis alignment(OAA) of an infrared sensor(IRS) using a microwave sensor(MWS) was presented as a method of an axis alignment to minimize the problems that could be caused by the misalignment of the two sensors in the missile including the dual-mode sensor. The azimuth(AZ) and elevation(EL) angles of the two targets used for each sensor test were calculated by using the transformation equation and the test results of the MWS and IRS, and then the proposed OAA was verified by comparing the angles. Furthermore, the validity of the proposed OAA was demonstrated by confirming the abnormality of the OAA through the test results of the electro optical head(EOH) of the IRS which was equipped with a tilt on the missile fuselage.

A RF MEMS Transmitter Based on Flexible Printed Circuit Boards (연성 인쇄 회로 기판을 이용한 초고주파 MEMS 송신기 연구)

  • Myoung, Seong-Sik;Kim, Seon-Il;Jung, Joo-Yong;Yook, Jong-Gwan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.1
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    • pp.61-70
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    • 2008
  • This paper presents the flexible MEMS transmitter based on flexible printed circuit board or FPCB, which can be transformed to arbitrary shape. The FPCB is suitable to fabricate light weight and small size modules with the help of its thin thickness. Moreover a module based on FPCB can be attached on the arbitrary curved surface due to its flexible enough to be lolled up like paper. In this paper, the flexible MEMS transmitter integrated on FPCB for a short-distance sensor network which is based on orthogonal frequency division multiplexing(OFDM) communication system is proposed. The active device of the proposed flexible MEMS transmitter is fabricated on InGaP/GaAs HBT process which has been used for power amplifier design to take advantages of high linear and high efficient characteristics. Moreover, the passive devices such as the filter and signal lines are integrated and fabricated on the FPCB board. The performance of the fabricated flexible MEMS transmitter is analyzed with EVM characteristics of the output signal.

2DEG Calculation in InP HEMT (InP HEMT의 2DEG계산)

  • Hwang, K.C.;Ahn, H.K.;Han, D.Y.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.316-318
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    • 2003
  • 양자우물 구조를 사용한 HEMT(High Electron Mobility Transistor)는 고속 스위칭 소자와 초고주파 통신용 소자 및 센서에에 우수한 동작특성을 갖고 있다. 본 논문에서는 AlInAs/InP HEMT의 heterostructure를 파동방정식과 Poisson 방정식을 self-consistent 한 방법으로 해석하였다. 파동방정식으로 junction의 전자농도를 계산하고, Poisson 방정식을 해석하여 potential profile에 의한 전자 농도가 heterostructure에서 self-consistent가 되도록 연산하였다. 끝으로 AlInAs/InP 구조에서 positively ionized donor, valance band에서의 hole, conduction band의 free electron과 구조내의 2DEG를 AlGaAs/GaAs 및 AlGaAs/InGaAs/GaAs와 비교하였다.

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A development of intelligent spacer built in the Internal type UHF partial discharge sensor (초고주파 광대역 부분방전 센서를 내장한 지능형 스페이서 개발)

  • Kim, Dong-Suk;Hwang, Chul-Min;Kim, Young-Noh;Choi, Jae-Ok;Seo, Wang-Byuk;Han, Bong-Soo;Choi, Soo-Hyun
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.163-164
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    • 2007
  • In this study, we developed intelligent spacer built in the internal type UHF PD sensors. 3-Dimensional electro-magnetic simulations were performed to analyze electric-field distribution of the single-phase GIS and three-phase GIS. After considering the spacer's specification, Sensor structures were designed and analyzed using the 3-D EM Simulator. As a result of the simulation the internal type UHF PD sensors were built in. Performance of the sensor built into real scale GIS spacer was measured in terms of return loss and detected Max voltage. And we identified a character of the intelligent spacer by using 5pC partial discharge ceil.

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MEMS Probes for Permittivity Measurement (유전율 측정을 위한 MEMS 프로브)

  • Jeong Geun-Seok;Jeong Eum-Min;Kim Jung-Mu;Park Jae-Hyoung;Cho Jei-Won;Cheon Chan-Yul;Kim Yong-Kweon;Kwon Young-Woo
    • 한국정보통신설비학회:학술대회논문집
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    • 2004.08a
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    • pp.226-229
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    • 2004
  • 본 논문은 초고주파 영역에서 개방 단말 동축선을 대신해서 복소 유전율을 측정할 수 있는 MEMS 프로브와 그 응용예로 MEMS 프로브 어레이를 제안한다. MEMS 프로브는 기존의 동축선 프로브와 달리 커넥터와의 연결이 간단하여 일회용으로 프로브를 사용할 수 있다는 점에서 의료용으로 사용할 수 있는 가능성이 있다. 샘플의 유전율 분포를 구하기 위해서 기존의 센서는 반복 접촉을 요구하고 이로 인한 번거로움과 측정 오차를 줄일 목적으로 MEMS 프로브 어레이를 개발 하였다. MEMS 프로브 어레이는 RF 스위치를 사용하여 다수의 측정 포인트를 한번의 센서 접촉으로 측정할 수 있는 새로운 개념의 프로브이다. 1GHz부터 40GHz까지의 광대역에서 0.9% 식염수의 유전율을 측정하여 MEMS 프로브의 성능을 검증하였다.

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Development of an Intelligent Spacer Built in the Internal type UHF Partial Discharge Sensor (초고주파 광대역 부분방전 센서를 내장한 지능형 스페이서 개발)

  • Kim, Dong-Suk;Hwang, Chul-Min;Kim, Young-Noh;Choi, Jae-Ok;Seo, Wang-Byuk;Han, Bong-Soo;Choi, Soo-Hyun;Jang, Yong-Mu
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1378-1379
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    • 2008
  • In this study, we developed intelligent spacer built in the internal type UHF PD sensors. 3-Dimensional electro-magnetic simulations were performed to analyze electric-field distribution of the single-phase GIS and three-phase GIS. After considering the spacer's specification, Sensor structures were designed and analyzed using the 3-D EM Simulator. As a result of the simulation the internal type UHF PD sensors were built in. Performance of the sensor built into real scale GIS spacer was measured in terms of return loss and detected Max voltage. And we identified a character of the intelligent spacer by using 5pC partial discharge cell.

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Fabrication of Thick Silicon Dioxide Air-Bridge and Coplanar Waveguide for RF Application Using Complex Oxidation Process and MEMS Technology (복합 산화법과 MEMS 기술을 이용한 RF용 두꺼운 산화막 에어 브리지 및 공면 전송선의 제조)

  • Kim, Kook-Jin;Park, Jeong-Yong;Lee, Dong-In;Lee, Bong-Hee;Bae, Yong-Hok;Lee, Jong-Hyun;Park, Se-Il
    • Journal of Sensor Science and Technology
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    • v.11 no.3
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    • pp.163-170
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    • 2002
  • This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

High Sensitive Strain Detection of FeCoSiB Amorphous Films (아몰퍼스 FeCoSiB 박막의 고감도 스트레인 검출특성)

  • Shin, Kwang-Ho;Arai, Ken-Ichi;SaGong, Geon
    • Journal of Sensor Science and Technology
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    • v.9 no.1
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    • pp.22-27
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    • 2000
  • Amorphous FeCoSiB films with high saturation magnetostriction and excellent soft magnetic properties have been studied to evaluate their strain sensitivity. Films were subjected to a strain by bending of their substrates, which caused a change in the magnetic anisotropy of films via magnetoelastic coupling. Films were exhibited a figure of merit $F=({\Delta}{\mu}/{\mu})/{\varepsilon}$ (change in film permeability $\mu$ per unit strain $\varepsilon$) of $1.2{\times}10^5$, which is comparable with that of amorphous ribbons. To make a study of application of magnetostrictive films as strain sensor elements, we have prepared a micro-patterned film by means of the photolithography and ion milling processes. Impedance change in the patterned films, when strain was applied, was measured over the frequency range from 1 MHz to 1 GHz. Reflecting a large value of figure of merit F, a variation of 46% impedance of films was shown at 100 MHz frequency when a strain of $300{\times}10^{-6}$ was applied.

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