• 대한기계학회논문집A
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• 제34권11호
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• pp.1715-1720
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• 2010

본 연구에서는 장균열을 가지는 Si3N4 세라믹스의 균열 길이와 코팅 방법에 따르는 균열 치유 특성을 규명하였다. 약 $100{\sim}500\;{\mu}m$의 균열 길이는 24.5 ~ 98 N의 하중을 사용하여 비커스 압자를 이용하여 만들었다. 24.5 N의 하중으로 만든 단균열의 경우, $SiO_2$ 나노 콜로이드 코팅된 균열재는 모재보다 약 140 % 증가한 가장 높은 굽힘 강도를 보였지만, 장균열은 모재보다 낮은 굽힘 강도를 나타내었다. 그러나 대부분의 장균열 시험편의 굽힘 강도는 균열재보다 약간 증가하였다. 이러한 결과에 따라서, 복수 압입에 의한 $Si_3N_4$ 세라믹스의 균열 치유 특성을 코팅방법에 따라 연구하였다. 장균열 시험편의 가장 효과적인 코팅 방법은 정수압코팅방법이었다.

• 한국세라믹학회지
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• 제40권9호
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• pp.867-873
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• 2003

$Si_{3}N_{4}$-BN계 기계 가공서 세라믹스를 $1800^{\circ}C$에서 2시간동안 25MPa의 압력하에서 열간 가압소결하여 제조하였다. $Si_{3}N_{4}$ 매트릭스에 판상의 h-BN 첨가량을 5-30 vol%까지 증가함에 따라 굽힘강도는 $Si_{3}N_{4}$ 단미의 1000 MPa에서 720~400 MPa로 감소하였고, 파괴인성도 $Si_{3}N_{4}$ 단미의 7.6MPaㆍ$m^{1/2}$에서 6.5~4.1 MPaㆍ$m^{1/2}$로 감소하였다. $\beta$-$Si_{3}N_{4}$의 결정립 크기와 형상비는 h-BN 첨가에 의해 약간 감소하였다. $Si_{3}N_{4}$ 단미는 절삭시 취성 파괴를 나타내어 절삭이 불가능하였으나, $Si_{3}N_{4}$-BN계 기계 가공서 세라믹스는 파괴가 발생하지 않으면서 절삭이 가능하여, 우수한 기계 가공성을 나타내었다. h-BN 함량이 증가할수록 절삭과 마이크로 드릴링시의 절삭력은 감소하였다.

• 한국세라믹학회지
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• 제20권3호
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• pp.211-216
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• 1983

This work aims at characterizing silicon grains and its compacts. In order to remove iron silicon grains were washed with 5N hydrochloride at 60-7$0^{\circ}C$ for 170 hrs, and then followed the chemical analysis by atomic absorption spectrophotometer X-ray diffraction analysis SEM observation and specific surface area determination by B. E. T. Mixtures of graded silicon particles with two or three different sizes were made into packings by mechanical vibration. The mixtures were used to make compacts with 10 mm in diameter and 70mm in length by isostatically pressing at 1, 208 kg/$cm^2$ (20 kpsi) and 4, 255kg/$cm^2$ (60 kpsi) respectively. Bulk densities of packings and compacts were measured. A slip made of magnesium nitrate solution and fine silicon particles was spray-dried and then decomposed at 30$0^{\circ}C$ for the purpose of coating the uniform layer of magnesium oxide on the surface of particles. The results obtained are as follows: (1) About two thirds of iron content could be removed from silicon by washing silicon powders with hydrochloride. (2) Uniform layer of magnesium oxide on the surface of silicon could be prepared by spray-drying suspension and by decomposing it. (3) B. E. T. specific surface area of fine silicon particles was 2, 826.753$m^3$/kg. (4) In the binary system with two sizes of 40-53$\mu\textrm{m}$ particles and <10$\mu\textrm{m}$ particles the maximum bulk density of packing was 55% of theoretical value and that of compacts made at the pressure of 4, 255 kg./$cm^2$ (60 kpsi) was 73% of theoretical value. (5) In the ternary system with three sizes the maximum bulk density of packing was 1.43 g/$cm^3$and that of compacts was 1.80g/$cm^3$which is equivalent to 77.6% of theoretical value. The composition of the closest compact was consisted of 50% of 40-53$\mu\textrm{m}$ particles 20% of 10-30$\mu\textrm{m}$ particles and 30% of <10$\mu\textrm{m}$ parti-cles.

• Tribology and Lubricants
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• 제35권5호
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• pp.274-285
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• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.