• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.34-37
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• 2001

In this study, the capacitance-voltage properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.20)-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1480~150$0^{\circ}C$ and 4 hours, respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C<$\pm$10%. The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.ulating layers.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.189-193
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• 1997

(S $r_{0.85}$/C $a_{0.15}$)Ti $O_3$(SCT) thin films at various deposition temperature and rf power were grown by rf magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/ $SiO_2$/Si). The crystallinity of the films increases with increasing deposition temperature. SCT thin film is depend on the surface morphology and crystallinity of Pt films for bottom electrode. Dielectric constant of (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$ thin films deposited on Si wafer substrate are larger with the increase of deposition temperature and gain size.in size.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.816-822
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• 1995

본 고에서는 지구환경문제에 관련된 가스와 그들의 검지를 위한 가스센서에 관하여 살펴보고자 한다. 환경오염을 방지하려는 노력과 대책이 전세계적으로 추진되고 있는 시점에서 특히 대기오염의 주범인 환경가스에 대한 고성능 센서의 개발은 필수불가결하다. 그러나 현재에 사용되고 있는 환경가스센서는 차량의 배기계통에 사용되는 산소센서나 연소배출가스를 검지하는 소수의 가스센서외에는 아직 실용화되지 못하고 있다. 따라서 고온, 부식등의 과혹한 조건하에서 안정하고, 고성능의 센서의 개발은 물론 센서를 구동시키는데 필연적인 신호처리 등 주변기술 또한 병행해서 발달되어야 할 것이다.

• 한국전기전자재료학회논문지
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• 제29권1호
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• pp.58-61
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• 2016

Degradation in power cables used in distribution lines to the material of the wire, manufacturing method, but also the line of the environment, generates a variety of degradation depending upon the type of load. The local wire deterioration weighted wire breakage accident can occur frequently, causing significant proprietary damage can lead to accidents and precious. In this study, the signal detected by the eddy current aim to develop algorithms capable of determining the signals for the top part and at least part of the signal by using a signal processing technique called K-means algorithm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.451-455
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• 1997

The partial discharge has been blown as the chief breakdown of power equipments. The analysis and the recognition is much difficult because the partial discharge signal is very small and has complex aging pattern. Recently, insulation aging diagnosis based on pattern of phase(Ф), partial discharge magnitude(q), number(n) has been very important. Owing to depreciate the reappearance of aging progress at the electrical tree pattern and to be difficult to analyze visually, the study on partial discharge pattern is suggested to normalizing analysis method of partial discharge signals. This parer is purposed on prediction of life-time measurement of cv-cable, on decision of risk degree with normalization and real-time measurement of partial discharge signals for aging diagnosis of cv-cable. As normalizing the aging signals of electrical tree in cv-cable, it is able to confirm risk degree of insulation material with the distribution of Ф-q-n and recognize the process of aging pattern using neural network.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.444-445
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• 2007

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering system. An ultrathin layer of nickel oxide (NiO) was deposited on the AZO anode to enhance the hole injections in organic light-emitting diodes (OLED). The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.492-493
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• 2007

We have investigated Electrical Properties of Organic Light-Emitting Diode depending on Varied Temperature using 8-hydroxyquinoline aluminum($Alq_3$) as an electron transport and emissive material. We analyzed the electrical properties of organic light emitting diodes by impedance characteristics of ITO/$Alq_3$/Al. Impedance characteristics was measured complex impedance Z and phase e in the frequency range of 40 Hz to $10^7\;Hz$. From these analyses, we are able to interpret electrical Properties of OLED depending on temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.893-896
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• 2000

The SrBi$_2$Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite Phase was crystalized to 650[$^{\circ}C$] and Bi-layered perovskite phase was crystalized above 700[$^{\circ}C$]. The maximum remanent polarization is 11.73 ${\mu}$C/cm$^2$at 500[$^{\circ}C$] of substrate temperature and 750[$^{\circ}C$] annealing temperature for 30min.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.240-243
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• 1999

(Sr$\sub$0.85/Ca$\sub$0.15/)TiO$_3$thin films were deposited on Pt-coated TiO$_2$/SiO$_2$/Si wafer by the rf sputtering method. Experiments were conducted to investigate the electrical properties of SCT thin films with various top electrode. C-F and C-V measurements show that SCT thin films annnealed at 600$^{\circ}C$ have a larger capacitance than SCT thin films deposited at 400$^{\circ}C$ , and there is nearly no difference between top electrodes. I-V measurement show that Pt top electrode have a good leakage current density of < 10nA/$\textrm{cm}^2$,. making them suitable for DRAM application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.244-247
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• 1999

The(Sr$\sub$0.85/Ca$\sub$0.15/) TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at room temperature is close to stoichiometry(1.102 in A/B ratio). Also, SCT thin films deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$].The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$].