• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.6
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• pp.185-190
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• 2023

Recently, tracking radar requires the development of millimeter wave tracking radar to acquire target information with high resolution in various environments. The development of millimeter wave tracking radar requires the development of transmission and receiving components that can be applied to the millimeter wave tracking radar, as well as verification of the applicability of the tracking radar. In order to verify the applicability of the developed transmitting and receiving components, it is necessary to develop a signal acquisition device that can control the transmitting and receiving components using the operating concept of a tracking radar and check the status of the received signal. In this paper, we implemented a signal acquisition device that can confirm the applicability of components developed for millimeter wave tracking radar. The signal acquisition device was designed to process in real time the OOOMHz center frequency and OOMHz bandwidth signals input from 4 channels to verify the received signal. In addition, component control applying the tracking radar operation concept was designed to be controlled by communication such as RS422, RS232, and SPI and generation of control signals for the transmission and receiving time. Lastly, the implemented signal acquisition device was verified through a signal acquisition device performance test.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.157-167
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• 2003

In this paper, to reduce the resonant length of patch, microstrip patch antenna of linear polarization which is suppressed at two radiation edges is designed and fabricated at the frequency of 1.575 GHz. The result is like that the resonant length of patch is 45 mm and the length reduction effect is 43.8 % when it is compared with that(80 mm) of plane type. The gain is 4.4 dBd and -3 dB beamwidths are 112$^{\circ}$ and 66$^{\circ}$ in the E-plane and H-plane, respectively. Also, to reduce the size of patch, microstrip patch antennas those are suppressed at four radiating comers are designed and fabricated at the same frequency in the linear and circular polarization, respectively. For linear polarization, at the 1.2 of width/length(W/L) ratio, the patch area is 53 mm $\times$ 63.6 mm and the size reduction effect is 56.1 % when compared with that(80 mm $\times$ 96 mm) of plane type. The gain is 4.3 dBd and the -3 dB beamwidths are 120$^{\circ}$ and 78$^{\circ}$ in the E-plane and H-plane, respectively. For circular polarization, the patch size(54.2 mm $\times$ 61.5 mm) is reduced by 47.2 % than that(76 mm $\times$ 83 mm) of plane type. -3 dB beamwidth of horizontal polarization in the z-x plane and vortical polarization in the y-z plane are 108$^{\circ}$ and 93$^{\circ}$, respectively and this means the increasement in both planes by 52$^{\circ}$ and 27$^{\circ}$ than those of plane type. The maximum gain is 2.5 dBd in the horizontal polarization in the z-x plane. Axial ratio is 1.5 dB at 1.575 GHz and the 2 dB axial ratio bandwidth(ARBW) is 20 MHz(1.3 %).

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.122-130
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• 2013

This work proposes a 12b 100MS/s 45nm CMOS four-step pipeline ADC for high-speed digital communication systems requiring high resolution, low power, and small size. The input SHA employs a gate-bootstrapping circuit to sample wide-band input signals with an accuracy of 12 bits or more. The input SHA and MDACs adopt two-stage op-amps with a gain-boosting technique to achieve the required DC gain and high signal swing range. In addition, cascode and Miller frequency-compensation techniques are selectively used for wide bandwidth and stable signal settling. The cascode current mirror minimizes current mismatch by channel length modulation and supply variation. The finger width of current mirrors and amplifiers is laid out in the same size to reduce device mismatch. The proposed supply- and temperature-insensitive current and voltage references are implemented on chip with optional off-chip reference voltages for various system applications. The prototype ADC in a 45nm CMOS demonstrates the measured DNL and INL within 0.88LSB and 1.46LSB, respectively. The ADC shows a maximum SNDR of 61.0dB and a maximum SFDR of 74.9dB at 100MS/s, respectively. The ADC with an active die area of $0.43mm^2$ consumes 29.8mW at 100MS/s and a 1.1V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.711-719
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• 2011

A study of miniaturization of an L-band orthomode transducer(OMT) for field experiments of radar backscatter is presented in this paper. The proposed OMT is not required the additional waveguide taper structures to connect with a standard adaptor by the newly designed junction structure which bases on a waveguide taper. Total length of the OMT for L-band is about 1.2 ${\lambda}_o$(310 mm) and it's a size of 60 % of the existing OMTs. And, to increase the matching and isolation performances of each polarization, two conducting posts are inserted. The bandwidth of 420 MHz and the isolation level of about 40 dB are measured in the operating frequency. The L-band scatterometer consisting of the manufactured OMT, a horn-antenna and network analyzer(Agilent 8753E) was used STCT and 2DTST to analysis the measurement accuracy of radar backscatter. The full-polarimetric RCSs of test-target, 55 cm trihedral corner reflector, measured by the calibrated scatterometer have errors of -0.2 dB and 0.25 dB for vv-/hh-polarization, respectively. The effective isolation level is about 35.8 dB in the operating frequency. Then, the horn-antenna used to measure has the length of 300 mm, the aperture size of $450{\times}450\;mm^2$, and HPBWs of $29.5^{\circ}$ and $36.5^{\circ}$ on the principle E-/H-planes.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.1
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• pp.77-88
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• 2000

In this paper, the 3-mode variable gain high power amplifier for a transmitter of INMARSAT-B operating at L-band(1626.5-1646.5 MHz) was developed. This SSPA can amplify 42 dBm in high power mode, 38 dBm in medium power mode and 36 dBm in low power mode for INMARSAT-B. The allowable errol sets +1 dBm as the upper limit and -2 dBm as the lower limit, respectively. To simplify the fabrication process, the whole system is designed by two parts composed of a driving amplifier and a high power amplifier. The HP's MGA-64135 and Motorola's MRF-6401 were used for driving amplifier, and the ERICSSON's PTE-10114 and PTF-10021 for the high power amplifier. The SSPA was fabricated by the RP circuits, the temperature compensation circuits and 3-mode variable gain control circuits and 20 dB parallel coupled-line directional coupler in aluminum housing. In addition, the gain control method was proposed by digital attenuator for 3-mode amplifier. Then il has been experimentally verified that the gain is controlled for single tone signal as well as two tone signals. In this case, the SSPA detects the output power by 20 dB parallel coupled-line directional coupler and phase non-splitter amplifier. The realized SSPA has 41.6 dB, 37.6 dB and 33.2 dB for small signal gain within 20 MHz bandwidth, and the VSWR of input and output port is less than 1.3:1. The minimum value of the 1 dB compression point gets more than 12 dBm for 3-mode variable gain high power amplifier. A typical two tone intermodulation point has 36.5 dBc maximum which is single carrier backed off 3 dB from 1 dB compression point. The maximum output power of 43 dBm was achieved at the 1636.5 MHz. These results reveal a high power of 20 Watt, which was the design target.