• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.16-22
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• 2024

Along with the high interest in electric vehicles and new renewable energy, there is a growing demand to apply lithium-ion batteries in the construction equipment industry. The capacity of heavy construction equipment that performs various tasks at construction sites is rapidly decreasing. Therefore, it is essential to accurately predict the state of batteries such as SOC (State of Charge) and SOH (State of Health). In this paper, the errors between actual electrochemical measurement data and estimated data were compared using the Dual Extended Kalman Filter (DEKF) algorithm that can estimate SOC and SOH at the same time. The prediction of battery charge state was analyzed by measuring OCV at SOC 5% intervals under 0.2C-rate conditions after the battery cell was fully charged, and the degradation state of the battery was predicted after 50 cycles of aging tests under various C-rate (0.2, 0.3, 0.5, 1.0, 1.5C rate) conditions. It was confirmed that the SOC and SOH estimation errors using DEKF tended to increase as the C-rate increased. It was confirmed that the SOC estimation using DEKF showed less than 6% at 0.2, 0.5, and 1C-rate. In addition, it was confirmed that the SOH estimation results showed good performance within the maximum error of 1.0% and 1.3% at 0.2 and 0.3C-rate, respectively. Also, it was confirmed that the estimation error also increased from 1.5% to 2% as the C-rate increased from 0.5 to 1.5C-rate. However, this result shows that all SOH estimation results using DEKF were excellent within about 2%.