• Composites Research
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• v.21 no.4
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• pp.15-21
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• 2008

Interfacial shear strength between epoxy and carbon fiber was analyzed utilizing a hemi-spherical microbond specimens adhered onto single carbon fiber. The hemi-spherical microbond specimen showed high regression coefficient and small standard deviation in the measurement of interfacial strength as compared with a droplet and an inverse hemi-spherical one. This seemed to be caused by the reduced meniscus effects and the reduced stress concentration In the region contacting with a pin-hole loading device. Finite element analysis showed that the stress distributions along the fiber/matrix interface in the hemi-spherical specimen had a stable shear stress distribution along the interface without any stress mode change. The experimental data was also different according to the kinds of loading device such as the microvise-tip and the pin-holed plate.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.241-247
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• 1992

The direct bonding of Cu to $Al_2O_3$, employing the $Cu-Cu_2$O eutectic skin melt, is investigated. The bonding force and interface structure of samples prepared by oxidation at $1015^{\circ}C$ in $1.5{\times}10^{-1}$torr followed by bonding at 107$5^{\circ}C$ under $10_{-3}$ torr vacuum have been studied using peeling test, SEM, EDS and XRD. It has been found that the optimal strength is obtained for 3 minutes of oxidation while the adhesion force is decreased with oxidation shorter or longer than 3 minutes. The rupture occured at alumina-eutectic interface. Fractured surface of $Al_2O_3$covered with $Cu_2$O nodules pulled out of the Cu indicates that bonding strength is governed by $Cu-Cu_2$O interface and not by $Cu_2$O-A$l_2O_3$interface. The bonding force is slightly increased with bonding time and the reaction phases of CuA$l_2O_4$and $CuAlO_2$are formed at interface during the bonding.

• Proceedings of the KWS Conference
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• 1991.11a
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• pp.89-93
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• 1991

• Proceedings of the KWS Conference
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• 2000.04a
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• pp.283-286
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• 2000

• Korean Journal of Materials Research
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• v.6 no.5
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• pp.532-539
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• 1996

동과 동을 저온에서 단시간내에 접합시키는 가능성을 검토하기 위해서 직류 자기 스퍼터링을 이용한 코팅한 주석 및 주석-잡 합금층을 중간층으로 사용하였다. 접합은 대기중 200-35$0^{\circ}C$의 온도에서 수행되었고 접합온도에 도달직후 바로 냉각하였다. 접합 계면에는 액상의 주석과 고상의 동간의 반응에 의해 n-상(Cu6Sn5) 및 $\varepsilon$-상(Cu3Sn)으로 구성된 금속간화함물 층이 형성되었다. 전단강도로 측정된 접합강도는 접합온도에 따라 비례적으로 증가하지만 30$0^{\circ}C$ 이상에서 감소하였다. 접합강도는 2.8-6.2MPa 범위로 나타났으며, 중간층합금 성분에 따른 접합계면에서의 금속간화합물의 생성거동과 관련지어 설명되었다. 실험결과 실용적인 접합법으로서 저온 단시간 접합의 가능성이 확인되었다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.7
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• pp.929-933
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• 2010

Four-point bending tests were performed to investigate the interfacial adhesion of Cu-Cu bonding fabricated by thermo-compression process for three dimensional packaging. A pair of Cu-coated Si wafers was bonded under a pressure of 15 kN at $350^{\circ}C$ for 1 h, followed by post annealing at $350^{\circ}C$ for 1 h. The bonded wafers were diced into $30\;mm\;{\times}\;3\;mm$ pieces for the test. Each specimen had a $400-{\mu}m$-deep notch along the center. An optical inspection module was installed in the testing apparatus to observe crack initiation at the notch and crack propagation over the weak interface. The tests were performed under a fixed loading speed, and the corresponding load was measured. The measured interfacial adhesion energy of the Cu-to-Cu bonding was $9.75\;J/m^2$, and the delaminated interfaces were analyzed after the test. The surface analysis shows that the delamination occurred in the interface between $SiO_2$ and Ti.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.29-37
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• 2021

The effect of Ar/N₂ two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N₂ 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N₂ 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m² and 2.33±0.67 J/m², respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.

• Journal of the Korean Society for Nondestructive Testing
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• v.15 no.4
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• pp.540-548
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• 1996

In general residual stress is measured by X-ray diffraction method but in case of bonding residual thermal stress it is inadequate technique to examine the stress singularity. Therefore Two-dimensional elastic boundary element analyses were carried out to investigate the residual thermal stress and stress singularity of bonding interface in Al/Epoxy. This boundary element results were compared with the strain gauge measurements. The effects of different interface models, sub-element and adherend thickness are presented and discussed. On the basis of the obtained results, interface delamination causing by normal stress is expected and stress singularity is observed more intensively increasing with adherend thickness. It is concluded that the bonding strength of Al/Epoxy interface can be estimated correctly by taking into account the stress singularity at the edge of the interface.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.994-1000
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• 2000

Mn-Ni-Co계 스피넬을 모재로 선택하여 상업용 페라이트 등 다양한 종류의 Fe-스피넬과 동시 소결 가능성을 검토할 목적으로 각 소재의 소결 거동, 서미스터와의 계면 반응이나, 2차상의 형성 등에 대해 알아보았다. 대부분의 페라이트 조성이 Mn 스피넬과 새로운 2차상을 형성하지는 않는 것을 알 수 있었다. 상업용 페라이트의 경우 115$0^{\circ}C$ 소결 온도에서 접합이 가능한 조성은 다량의 액상이 존재하며 접합계면의 폭이 상대적으로 넓으므로 서미스터 특성에도 좋지 않은 영향을 줄 수 있을 것으로 생각된다. 반면에 MFN1과 MFN2 조성은 접합계면에서 새로운 2차상이 형성되지 않고 원소의 상호확산도 작아 NTC 서미스터의 동시소결용 보호재로서의 가능성이 높은 것으로 확인되었다.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.5
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• pp.437-443
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• 2010

In recent years, as nano scale structured thin film technology has emerged in various fields such as the materials, biomedical and acoustic sciences, the quantitative nondestructive adhesion evaluation of thin film interfaces using ultra high frequency scanning acoustic microscopy(SAM) has become an important issue in terms of the longevity and durability of thin film devices. In this study, an effective technique for investigating the interfaces of nano scale structured thin film systems is described, based on the focusing of ultrasonic waves, the generation of leaky surface acoustic waves(LSAWs), V(z) curve simulation and ultra high frequency acoustical imaging_ Computer simulations of the V(z) curve were performed to estimate the sensitivity of detection of micro flaws(i.e., delamination) in a thin film system. Finally, experiments were conducted to confirm that a SAM system operating at a frequency of 1 GHz can be useful to visualize the micro flaws in nano structured thin film systems.