• Title/Summary/Keyword: 접합온도

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이종접합 태양전지용 p a-Si:H 에미터 층 최적화 및 태양전지 특성 거동 연구

  • Kim, Kyung Min;Jeong, Dae Young;Song, Jun Yong;Park, Joo Hyung;Oh, Byung Sung;Song, Jinsoo;Lee, Jeong Chul
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.129.2-129.2
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    • 2011

  • 본 연구에서는 a-Si:H/c-si 구조의 이종접합 태양전지의 p a-Si:H 에미터 층의 박막 조건에 따라 태양전지 특성을 연구하였다. p, n-layer는 PECVD (Plasma-enhanced chemical vapor deposition) i-layer는 HWCVD(Hot wire chemical vapor deposition), ITO는 RF 마그네트론 스퍼터링법으로 제작하였다. p-layer의 도핑 농도, 기판 증착 온도, 증착 높낮이에 따라 특성을 비교 분석 하였다. QSSPC로 minority carrier life time, 자외 가시선 분광분석 장치로 투과 반사도를, Ellipsometer로 흡수 계수, 두께, FTIR로 막의 구성요소 등의 변화를 조사하여 개선된 p a-Si:H의 특성이 이종접합 태양전지에서 효율향상에 영향을 주는지 Photo IV와 EQE를 통하여 조사하였다.

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Improvement the Junction Temperature Measurement System Considering the Parasitic Capacitance in LED (LED 기생 커패시턴스를 고려한 접합온도 측정 시스템의 개선)

  • Park, Chong-Yun;Yoo, Jin-Wan
    • Journal of Industrial Technology
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    • v.29 no.B
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    • pp.187-191
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    • 2009

  • Recently, we have used LEDs to illumination because it has a high luminous efficiency and prolong lifespan. However the light power and lifetime is reduced by junction temperature increment of LED. So it is important to measure the junction temperature accurately. In case of using a electrical method measuring junction temperature of LED. Temperature measurement errors are spontaneously generated because of a parasitic capacitances in LED. In this paper, we proposed a method that reducing LED's parasitic capacitance effects for electrical measurement. It was demonstrated by the experimental result that is more correct than established method.

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Design and Implementation of High Power LED Junction Temperature Measurement Circuit (고출력 LED의 접합온도 측정회로 설계 및 구현)

  • Park, Chong-Yun;Yoo, Jin-Wan
    • Journal of Industrial Technology
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    • v.30 no.A
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    • pp.83-88
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    • 2010

  • Recently, the LED lighting is widely used to illumination purpose due to its high luminous efficiency and the long life time. However, the light power and lifetime is reduced by junction temperature increment of LED. So it is important to measure the junction temperature accurately. In this paper, we proposed a new design and implementation method of high power LED junction temperature measurement circuit. The proposed circuit has two current sources which are a driving current source and a measurement is verified by experiment, and the result shows that the proposed circuit is appropriate to practical use.

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