• Korean Journal of Materials Research
• /
• v.11 no.4
• /
• pp.329-334
• /
• 2001

Microstructures of barrier-type oxide layers on aluminum was studied by XRD, TEM and RBS. Fer formation of oxide layer. aluminum was anodized in a boric acid solution. The thickness of the oxide film subjected to applied voltage increased linearly at ratio of 1.54nm/V. For oxide layer anodized at 300V, amorphous structure of oxide layer was not transformed after heat treatment at 50$0^{\circ}C$ , while for oxide layers anodized at higher voltages the amorphous structure crystallized into a ${\gamma}$-alumina without any heat treatment. It was also found that the amorphous structure of oxide layer formed at 100V transformed into crystalline structure by electron irradiation. The structure was identified as ${\gamma}$-alumina.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2017.10a
• /
• pp.510-511
• /
• 2017

In this paper, we have studied to minimize the lifetime and fault occurrence of LED fixtures, which have a short lifetime and frequent faults. In the current LED chip, the lifetime is semi-permanent, but compared to the lifetime of the LED chip, Drivers do not last long. In recent years, low-priced LED illuminators such as those from China have entered the market, and many consumers are perceiving LED illuminators. In order to solve these problems, we designed an LED illuminator of 25W class by using AC Direct IC, which has a longer lifetime than the conventional driver, by removing the electrolytic capacitor in the LED driving driver which is the cause of the failure.