• Proceedings of the Korean Fiber Society Conference
• /
• 1998.10a
• /
• pp.481-484
• /
• 1998

전자산업의 급속한 발전과 정보사회로 변화해 감에 따라 각종 전자장비의 사용이 증가하게 되었다. 그러나 전자장비에서 발생하는 전자파에 의한 기기 상호간의 장해현상과 인체에 대한 유해성 등이 새로운 문제로 대두되게 되었다. 이러한 전자파를 효과적으로 차폐하기 위한 하우징 재료를 만들기 위한 여러 가지 노력이 진행되고 있는데 가장 널리 쓰이는 방법은 기존의 재료에 코팅 또는 페인팅 등을 이용하여 전도성 막을 형성시키는 것이나 이는 부가공정에 의한 추가비용, 내구성 등의 문제가 있다. (중략)

• Korean Journal of Materials Research
• /
• v.34 no.2
• /
• pp.111-115
• /
• 2024

Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.282-285
• /
• 1999

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0,0.1) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from 130$0^{\circ}C$ to 1$600^{\circ}C$, second phase was decreased and grain size was increased. In the case of 0.9 MgTiO$_3$-0.1SrTiO$_3$ ceramics sintered at 130$0^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 22.61, 10,928(at 1GHz), +50.26ppm/$^{\circ}C$ , respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1990.10a
• /
• pp.86-87
• /
• 1990

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.3-3
• /
• 2004

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.206-208
• /
• 1997

광부품, 광섬유 상호접속을 위한 각 재료의 V-groove가공방법과 그 응용에 대하여 조사하고 직접 V-groove를 제작하였다 각 재료의 V-groove가공에는 장단점이 있다. 따라서 광부품 또는 광섬유 접속시 각 재료의 사용환경에 의하여 가공방법을 결정해야한다. 본 논문은 광부품 상호접속을 위한 현존하는 여러 재료에 따른 V-groove 가공 방법과 그 응용에 대하여 고찰하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.244-244
• /
• 2011

핵융합장치 내부의 플라즈마 대면재료는 고온의 플라즈마와 직접 대면하므로 수 십 MW/$m^2$에 이르는 큰 열부하에 따른 재료의 물성변화, 즉 고온환경에 따른 재료의 팽윤, 크리프(creep) 변형 그리고 금속이 가역성이나 연성을 잃는 취화현상 등이 중요한 연구주제이다. 고열부하의 인가를 통한 핵융합대면재료의 물성실험은 현재 국내에서는 탄소히터, 열플라즈마 등을 이용하여 이루어지고 있으며 국외에서는 짧은 시간에 큰 열부하를 인가할 수 있는 고출력 전자빔장치가 주요한 열부하실험장치로 활용되고 있다. 본 연구에서는 기초적인 실험이 가능한 고열부하용 전자빔조사장치를 제작하여 대표적인 플라즈마 대면재료인 텅스텐에 60 keV, 30 mA의 전자빔을 조사한 후 고열부하에 따른 텅스텐의 물성변화를 측정하였다.

• Journal of Powder Materials
• /
• v.30 no.6
• /
• pp.516-520
• /
• 2023

Highly safe lithium-ion batteries (LIBs) are required for large-scale applications such as electrical vehicles and energy storage systems. A highly stable cathode is essential for the development of safe LIBs. LiFePO₄ is one of the most stable cathodes because of its stable structure and strong bonding between P and O. However, it has a lower energy density than lithium transition metal oxides. To investigate the high energy density of phosphate materials, vanadium phosphates were investigated. Vanadium enables multiple redox reactions as well as high redox potentials. LiVPO₄O has two redox reactions (V⁵⁺/V⁴⁺/V³⁺) but low electrochemical activity. In this study, LiVPO₄O is doped with fluorine to improve its electrochemical activity and increase its operational redox potential. With increasing fluorine content in LiVPO₄O_1-xF_x, the local vanadium structure changed as the vanadium oxidation state changed. In addition, the operating potential increased with increasing fluorine content. Thus, it was confirmed that fluorine doping leads to a strong inductive effect and high operating voltage, which helps improve the energy density of the cathode materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.5
• /
• pp.314-320
• /
• 2021

Controlling ambient humid condition through high performance humidity sensors has become important for various fields, including industrial process, food storage, and the preservation of historic remains. Although aerosol deposited humidity sensors using ceramic BaTiO₃ (BT) material have been widely studied because of their longtime stability, there remain critical disadvantages, such as low sensitivity, low linearity, and slow response/recovery time in case of the sensors fabricated at room temperature. To achieve superior humidity sensing properties even at room temperature condition, BT-Cu composite films utilizing aerosol deposition (AD) process have been proposed based on the percolation theory. The BT-Cu composite films showed gradually improved sensing properties until the Cu concentration reached 15 wt% in the composite film. However, the excessive Cu (above 30 wt%) containing BT-Cu composite films showed a rapid decrease of the sensing properties. The results of observed surface morphology of the AD fabricated composite films, to figure out the metal filler effect, showed correlation between surface topography as well as size and the amount of open pores according to the metal filler content. Overall, it is very important not only dielectric constant of the humidity sensing films but also microstructures, because they affect either the variation range of capacitance by ambient humidity or adsorption/desorption of ambient humidity onto/from the humidity sensing films.

• Electrical & Electronic Materials
• /
• v.21 no.9
• /
• pp.33-41
• /
• 2008