• Korean Journal of Ichthyology
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• v.7 no.1
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• pp.25-32
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• 1995

The larval fish, which had been previously identified or classified as Enedrias (Pholis) nebulosus, Enedrias spp., Pholis taczanowskii, and unidentified species belonging to Protosalanginae, were revealed as that of a gunnel, Enedrias fangi. This species has been known as a cold water species mainly caught in the Yellow Sea. Larval E. fangi showed peak abundances in the coastal waters off Chonlla Province in March, Chungnam Province in April, and Kyunggi Province in May and June. The primary spawning season of E. fangi seemed to be winter (November to January), and the eggs hatched after 60 days from spawning. The average growth rate of larval fish was about 0.33mm/day. The larval fish of 40mm in body length began to move to the bottom, and stayed in the bottom cold water mass when their body length was greater than 60-70mm. The average annual catches of larval E. fangi from 1985 to 1991 were 5,000M/T in the Yellow Sea, which were more than 99 % of the total gunnel catches around Korean waters. The peak season of catches was from March or April to July in Chungnam Province, and from May to July in Kyunggi Province.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.973-979
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• 2001

Tin-doped indium oxide (ITO) thin films were deposited using r.f. magnetron reactive sputtering and the electrical properties, such as the resistivity, carrier concentration and mobility, were investigated as a function of the sample position under a given magnetron sputtering condition. The nonhomogeneity of the electrical properties with the sample position was observed under a given magnetron sputtering condition. The resistivity of ITO thin film on the substrate which corresponded to the center of the target had a minimum value, 2∼4$\times$10$\^$-4/$\Omega$$.$cm, and it increased symmetrically when the substrate deviated from the center. The density measurement result also showed that ITO thin film deposited at the center has a maximum density of 7.0g/cm$^3$, which was a relative density of about 97%, and the density decreased symmetrically as the substrate deviated from the center. The nonhomogeneity of electrical properties with the deposition position could be explained with the incidence angle of the source beam alpha, which is related with an atomic self-shadowing effect. It was confirmed experimentally that the density in film affect both the carrier mobility and the conductivity. In the case where the density of ITO thin film is 7.0g/cm$^3$, the magnitude of the mean free path was identical with that of the grain size(the diameter of column). However, in the other cases, the mean free path was smaller than the grain size. These results showed that the scattering of the free electrons at the grain boundary is the major factor for the electrical conduction in ITO thin films having a high density, and there exists other scattering sources such as vacancies, holes, or pores in ITO thin films having a low density.ing a low density.

• Journal of radiological science and technology
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• v.29 no.1
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• pp.13-19
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• 2006

The PET scanner can detect the photon pair arriving from the source in phantom. The number of light photons released by the crystal(scintillator-BGO or LSO). In recent scintillation crystals in block structures were incorporated into full ring systems, and their resulted marked improvement in spatial resolution and increase in a sensitivity to annihilations. The uniformity of the crystal sensitivity is very important to makes correct information of abnormal states in organs. These factors influenced by the dection efficiency of the scintillators. We have study about the uniformity of crystals to the annihilation, And study about the standard deviation to average counts. The relative standard deviation in central detector groups more uniformed than circumferenced detector groups. It is caused detected quanta of gamma ray by the geometrical factors of PET detector. PET cameras are available with different geometric arrangement and several parallel rings oriented in the axial direction. The center groups from 7th to 40th groups are comparatively uniform and sensitive. But at the circumferenced detectors decreased the sensitivity and uniformity.

• Applied Microscopy
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• v.39 no.4
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• pp.341-348
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• 2009

The crystal structure of nano-crystalline, $BaTiO_3$, with the average particle size of 100 nm was investigated using electron diffraction techniques. We characterized the precession electron diffraction system and then carried out the structure determination using precession electron diffraction and conventional selected area electron diffraction. As a result, it was revealed that $BaTiO_3$ nano-crystalline exist as a mixture of tetragonal structure and cubic structure by precession electron diffraction technique. In addition, it could be turned out that $BaTiO_3$ nano-crystalline is a core-shell structure consisted of a tetragonal phased core and a cubic phased surface layer by theoretical calculation. The thickness of the cubic surface layer was approximately 8.5 nm and the lattice parameters of cubic and tetragonal phases were a=3.999${\AA}$ and a=3.999${\AA}$, c=4.022${\AA}$, respectively. Finally, it is expected that precession electron diffraction is more useful technique for structure determination of complicated nano-crystalline materials because of its higher spatial resolution and minimization of dynamical scattering effect.

• Progress in Medical Physics
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• v.11 no.2
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• pp.117-122
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• 2000

The IP(imaging plate) has been widely used to measure the two-dimensional distribution of incident radiation since it has a high sensitivity, reusability, a wide dynamic range, a high position resolution. Particularly, the easiness of acquiring digitized image using IP poses a strong merit because recent trend of data handling prefers image digitization. In order to test its usefulness in photon beam dosimetry, we measured the off-axis ratio(OAR) on portal planes and percent depth dose(PDD) within a phantom using IP, and compared the results with the data based on EGS4 Monte Carlo particle transport code, ion-chambers, conventional films. For the measurement, we used 6 MV X-rays, various field sizes. As a result, IP showed significant deviation from ion-chamber measurement: a significant overresponse, 100% greater than that of ion-chamber measurement at deep part of the phantom. Filtration of low-energy scattered photons at deep part of the phantom using 0.5 mm thick lead sheets did improve the result, only to the unacceptable extent. However, portal dose measurement showed possibilities of If as a dosimeter by showing errors less than 5%, as compared with film measurement.

• Applied Microscopy
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• v.35 no.2
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• pp.89-96
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• 2005

The ultrastructures of the fertilized egg envelope from Hyphessobrycon serpae belonging to Characidae was studied using scanning and transmission electron microscopes to get systematic fundamental data for classification of species and to confirm whether micropyle is a common trait of Characidae or not. The fertilized egg was of colorless, transparent, spherical, adhesive and demersal type. There were not oil droplets in vitelline membrane and attached structures in the outside of fertilize egg envelope. The egg envelope had a single micropyle resembling the pathway of sperm in the area of the animal pole. The micropyle was surrounded by 13 to 15 protruded lines of the egg envelope in a radiated form. The outer surface of fertilized egg envelope was covered by reticular adhesive fibrous structures and irregularly arranged by pore canals. The fertilized egg envelope consisted of three distinct layers an outer adhesive fibrous layer with high electron density, a middle layer with pore canals, and an inner layer consisting of 6 to 7 lamellae alternating layers with interlamellae of lower electron density. These ultrastructural characters of fertilized egg envelope form Hyphessobrycon serpae can be utilized in taxonomy of teleost, and as fundamental data for study on early development of fertilized egg. It seems that the morphology of micropyle is a common trait of Characidae

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.77-85
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• 2011

The silicon-germanium (SiGe) alloy, which is compatible with silicon semiconductor technology and has a smaller band gap and a lower thermal conductivity than silicon, has been used to fabricate electronic devices such as transistors, photodetectors, solar cells, and thermoelectric devices. This paper reviews the application of SiGe alloys to electronic devices and related technical issues. Since the SiGe alloy comprises germanium whose band gap is smaller than silicon, its band gap is also smaller than that of silicon irrespective of the ratio of silicon to germanium. This narrow band gap of SiGe enables the base thickness of bipolar transistors to decrease without a loss in current gain so that it is possible to improve the speed of bipolar transistors by adopting the SiGe-base. In addition, the conversion efficiency of solar cells is enhanced by the absorption of long-wavelength light in the SiGe absorption layer. Phonon scattering caused by the irregular distribution of alloying elements induces the lower thermal conductivity of SiGe than those of pure silicon and germanium. Because a thin film layer with a low thermal conductivity suppresses thermal conduction through a thermal sink, the SiGe alloy is considered to be a promising material for silicon-based thermoelectric systems.

• Journal of Broadcast Engineering
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• v.26 no.2
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• pp.155-166
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• 2021

Most object detection algorithms are studied based on RGB images. Because the RGB cameras are capturing images based on light, however, the object detection performance is poor when the light condition is not good, e.g., at night or foggy days. On the other hand, high-quality infrared(IR) images regardless of weather condition and light can be acquired because IR images are captured by an IR sensor that makes images with heat information. In this paper, we performed the object detection algorithm based on the compression ratio in RGB and IR images to show the detection capabilities. We selected RGB and IR images that were taken at night from the Free FLIR Thermal dataset for the ADAS(Advanced Driver Assistance Systems) research. We used the pre-trained object detection network for RGB images and a fine-tuned network that is tuned based on night RGB and IR images. Experimental results show that higher object detection performance can be acquired using IR images than using RGB images in both networks.

• Korean Journal of Optics and Photonics
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• v.33 no.6
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• pp.331-337
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• 2022

Raman spectroscopy is an optical technique that can identify molecules in a label-free manner, and is therefore heavily investigated in various areas ranging from biomedical engineering to materials science. Probe-based Raman spectroscopy can perform minimally invasive chemical analysis, and thus has potential as a real-time diagnostic tool during surgery. In this study, Raman experimentation was calibrated by examining the Raman shifts with respect to the concentrations of chemical substances. Raman signal characteristics, targeted for normal mice and cerebral tissues of the 5xFAD dementia mutant model with accumulated amyloid beta plaques, were measured and analyzed to explore the possibility of diagnosis of Alzheimer's disease. The application to the diagnosis of dementia was cross-validated by measuring Raman signals of amyloid beta. The results suggest the potential of Raman spectroscopy as a diagnostic tool that may be useful in various areas of application.