• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.98-103
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• 2001

A new application of dirchroic mirror for the improvement of luminance and luminous efficacy in an AC-Plasma Display Panel (PDP) is suggested. Only about half of the Vacuum Ultraviolet (VUV) generated in the reflective PDP cell is used for the excitation of the phosphor. We are suggesting an idea of adopting a dichroic mirror which can reflect the VUV toward the phosphor which otherwise is absorbed by the front panel. The optical constants of the thin films of dirhroic mirror were determined from the photometric measurements through an iteration process of matching calculated and measured values of the reflectance and transmittance in the VUV wavelength region. From these results, we could design such a filter whose high reflection zone is centered at 147nm by a computer simulation accurately. The 147nm VUV is radiated from Xenon 3Pl state which is dominantly used to activate the phosphor in the PDP cell. The dichroic mirror was made with an electronbeam evaporator and its reflectance was measured by a reflectometer. We confirmed the usefulness of the dichroic mirror for the improvement of efficiency with experiments done by test panels. The panel with mirror shows improved luminance and luminous efficacy by 20∼30％.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.715-722
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• 1994

Thermochromic $Vo_{2}$ thin films for "smart windows" were prepared by electron beam evaporationmethod on a glass substrate and spectral transmittances were examined by spectrophotometer. Substratetemperature of $300^{\circ}C$ and annealing temperature of $400^{\circ}C$ were found to be effective to give athermochromism on $Vo_{2}$ thin film due to the crystallization of the thin film. Furthermore, annealing of$Vo_{2}$ thin film affected the spectral transmittance and reduced the transmittance significantly at wavelengthbelow 500nm.$V_{0.95}W_{0.05}O_{2}$ thin film doped by 5 atomic percent of W showed semiconductor-metal transition around 0$0^{\circ}V_{0.995}W_{0.005}O_{2}$thin film which contains 0.5 atomic percent Sn showed therrnochrornisrn when it was depositedat substrate temperature of $300^{\circ}C$ and annealed at $450^{\circ}C$ for 5 hours in argon gas. The transitiontemperature of the $V_{0.995}W_{0.005}O_{2}$ thin film was found to be about $25^{\circ}C$ and showed some hysterisis. and showed some hysterisis.

• Korean Journal of Materials Research
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• v.10 no.5
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• pp.375-381
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• 2000

Aluminium foil for electrolytic capacitors was anodized at the voltage of 100V and 140V for 10 minutes in ammonium adipate solution to form aluminum oxide layer on aluminum substrate as an dielectric film. The thickness, the stoichiometry and the crystal structure of the layer were investigated by using RBS and TEM . In addition EIS technique was employed to study the effects of addition of sulfuric acid on the increment of the foil surface area. It was found that the thickness values of the layers anodized at 100V and 140V were about 130 nm and 190 nm respectively and the stoichiometry of the elements of aluminum and oxygen was 2:3. The anodic oxide layer was shown to be amorphous. but the structure irradiated with electron beam resulted in the transformation into crystalline structure of $${\gamma}$-Al_2$$O_3$ . From a comparison of the impedance results and the capacitance variation to investigate the ef- fects of sulfuric acid addition to the etching bath of hydrochloric acid, the EIS techinque could be useful to analyze the capacitance variation.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.81-89
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• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.416-417
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• 2013

최근 질화물계 발광다이오드(light emitting diode, LED) 소자는 핸드폰, 스마트 TV 등의 디스플레이 분야와 실내외조명, 감성조명, 특수조명 등의 조명분야에 그 응용분야가 급속히 확대되고 있다. 이러한 LED 소자는 에너지 절감과 친환경에 장점을 가지고, 가까운 미래에 조명시장을 대체할 것으로 예상된다. 이를 만족하기 위해서는 현재보다 더 높은 효율을 갖는 LED 개발이 요구되어지고 있는 상황이다. 일반적으로 질화물계 LED 소자의 효율은 내부양자 효율, 광추출 효율 등으로 나타낼 수 있다. 내부 양자효율은 성장된 결정의 질의 개선 및 다층의 이종접합 또는 다중양자우물 구조와 같이 활성층의 캐리어 농도를 높이는 접합구조로 설계되어 80% 이상의 효율을 나타낸다. 그러나 광추출 효율은 이에 미치지 못하고 있다. 이는 반도체 재료의 높은 굴절률로 인하여 빛이 외부로 탈출하지 못하고 내부로 반사되거나 물질 안에서 흡수가 일어나기 때문이다. 따라서 이러한 문제를 해결하기 위해 많은 연구 그룹들은, 표면에 패턴 형성하여 빛의 전반사를 줄여 그 효율을 올리는 연구결과를 보고하고 있다. 대표적인 방법으로는 wet etching, 전자빔 리소그라피, 나노임프린트 리소그라피, 레이저 홀로 리그라피, 나노스피어 리소그라피 등이 사용되고 있다. 이 중, 나노스피어 리소그라피는 폴리스틸렌 혹은 실리카 등과 같은 나노 크기의 bead를 사용하여 반도체 기판 표면에 단일층으로 고르게 코팅한 마스크로 사용하여 패턴을 주는 방법이다. 이 방법의 장점으로는 대면적에 균일한 패턴을 형성할 수 있고, 공정비용이 저렴하여 양산하기에 적합하다는 특징이 있다. 나노스피어 리소그라피를 통해서 표면에 생성된 패턴 모양의 각도에 따라서, 식각되는 깊이에 변화에 따라 실험한 결과들은 있지만, 아직까지 크기가 다른 나노입자들의 마스크 이용하여 형성된 패턴 밀도에 따른 광 추출 효과에 대한 연구가 많이 미흡하다. 따라서 본 연구에서는 다양한 크기의 실리카로 패턴을 형성시켜 패턴 밀도에 대한 광추출 효율의 효과에 대해서 조사하였다. 실험 방법으론, DI, 에탄올, TEOS, 암모니아의 순서대로 그 혼합 비율을 조정하여 100, 250, 500 nm 크기의 나노입자를 합성하였고 이것을 질화물계 LED의 표면 위에 단일층으로 스핀코팅 방법을 통해 코팅을 하였다. 그 후 ICP-RIE 방법으로 필라 패턴을 형성하였는데, 그 결과 100 nm SiO2 입자를 이용한 경우 $4.5{\times}10^9$/$cm^2$, 250 nm의 경우 $1.4{\times}10^9$/$cm^2$, 500 nm의 경우 $0.4{\times}10^9$/$cm^2$의 패턴의 밀도를 보여주었다(Fig. 1). 패턴의 밀도에 따라 전계광학적 특성을 확인하여 보았는데, 그 결과는 평평한 표면과 비교하였을 때 100 nm에서 383%, 250 nm에서는 320%, 500 nm에서는 244% 상승하는 결과를 보여주었다(Fig. 2). 이번 실험을 통해서 LED의 광추출 효율은 표면 모양과 깊이 뿐 아니라 밀도가 커질수록 그 효율이 올라간다는 사실을 알 수 있었다.

• Journal of Conservation Science
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• v.35 no.5
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• pp.440-452
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• 2019

This research has analyzed SI, the traditional steel, and SIHS(SI + HS), SICS(SI + CS), and SINiS(SI + NiS), the materials that were produced through welding and reprocessing three modern steel- HS, CS, and NiS- that have different carbon content. The purpose of the analyzation was to improve the definition of the multi-layered pattern that appears in the forging process. In observing modified structures on the commissures of three modern steel that have different carbon component to the SI, SINiS produced the most significant multi-layered pattern as well as the excellent welding quality. The excellent welding quality was due to the content of nickel which helped the forge welding process with other materials. There was no significant difference in crystal grain per materials, and SICS showed the highest hardness. At the measurement of EPMA for commissures of the materials, SINiS showed the highest definition of the multi-layered pattern due to the nickel and carbon content. The results above showed that the carbon steel with nickel content is the best material for the most definite multi-layered pattern, expressed from the multi-layered structure which is a characteristic of traditional forge welding technology. It is expected that the result of this research can be utilized as the technical data in further researches regarding the relics excavated from ancient welding process and their multi-layered structure and patterns.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.2 no.2
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• pp.125-133
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• 2004

Fission products of DUPIC (Direct Use of Spent PWR Fuel in CANDU Reactors) fuel, irradiated in HANARO research reactor with 61 ㎾/m of maximum linear power and 1,770 ㎿d/tU of average burn-up, was characterized by EPMA(Electron Probe Micro Analyzer). In order to find accurate characterization, the analysis results by EPMA of fresh simulated DUPIC fuel containing fission products as chemicals were compared with that of wet chemical analysis. The metallic precipitates observed at the center of the fresh simulated DUPIC fuel were about 1 $\mu\textrm{m}$ in size and their major components by EPMA were Mo-53.89 at.%, Ru-37.40 at.%, and Pd+Rh-8.71 at.%. Established procedure through the fresh simulated DUPIC fuel was applied to the irradiated DUPIC fuel. Observed size of metallic precipitates were 2∼2.5 $\mu\textrm{m}$ and their compositions were Mo-47.34 at.%, Ru-46 at.%, and Pd+Rh-6.65 at.%. What are uncommon things for this experiment, special treatment for improving the conductivity was attempted to the specimen and the conditions of exact irradiation of electron beam to small metallic precipitate were suggested.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.3
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• pp.578-584
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• 2017

$SiO_2$ buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on $SiO_2$/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was $4.53{\times}10^{-3}{\Omega}^{-1}$, resistivity, $4.42{\times}10^{-4}{\Omega}-cm$, sheet resistance, $27.63{\Omega}/sq.$, average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on $SiO_2$/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.35 no.1
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• pp.38-50
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• 2013

Purpose: The aim of this study is to evaluate the effect and potential of electron beam (E-beam) irradiation treatment to the synthetic bony mixtures composed of hydroxyapatite (HA; Bongros$^{(R)}$, Bio@ Co., Korea) and tricalcium phosphate (${\beta}$-TCP, Sigma-Aldrich Co., USA), mixed at various ratios and of type I collagen (Rat tail, BD Biosciences Co., Sweden) as an organic matrix. Methods: We used 1.0~2.0 MeV linear accelerator and 2.0 MeV superconductive linear accelerator (power 100 KW, pressure 115 kPa, temperature $-30{\sim}120^{\circ}C$, sensor sensitivity 0.1~1.2 mV/kPa, generating power sensitivity 44.75 mV/kPa, supply voltage $5{\pm}0.25$ V) with different irradiation dose, such as 1, 30 and 60 kGy. Structural changes in this synthetic bone material were studied in vitro, by scanning electron microscopy (SEM), elementary analysis and field emission scanning electron microscope (FE-SEM), attenuated total reflection (ATR), and electron spectroscopy for chemical analysis (ESCA). Results: The large particular size of HA was changed after E-beam irradiation, to which small particle of TCP was engaged with organic collagen components in SEM findings. Conclusion: The important new in vitro data to be applicable as the substitutes of artificial bone materials in dental and medical fields will be able to be summarized.

• Applied Chemistry for Engineering
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• v.28 no.6
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• pp.607-618
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• 2017

Harmful air pollutants are exhausted from the various industrial facilities including the coal-fired thermal power plants and these substances affects on the human health as well as the nature environment. In particular, nitrogen oxides ($NO_x$) and sulfur dioxide ($SO_2$) are known to be causative substances to form fine particles ($PM_{2.5}$), which are also deleterious to human health. The integrated system composed of selective catalytic reduction (SCR) and wet flue gas desulfurization (WFGD) have been widely applied in order to control $NO_x$ and $SO_2$ emissions, resulting in high investment and operational costs, maintenance problems, and technical limitations. Recently, new technologies for the simultaneous removal of $NO_x$ and $SO_2$ from the flue gas, such as absorption, advanced oxidation processes (AOPs), non-thermal plasma (NTP), and electron beam (EB), are investigated in order to replace current integrated systems. The proposed technologies are based on the oxidation of $NO_x$ and $SO_2$ to $HNO_3$ and $H_2SO_4$ by using strong aqueous oxidants or oxidative radicals, the absorption of $HNO_3$ and $H_2SO_4$ into water at the gas-liquid interface, and the neutralization with additive reagents. In this paper, we summarize the technical improvements of each simultaneous abatement processes and the future prospect of technologies for demonstrating large-scaled applications.