• Proceedings of the Safety Management and Science Conference
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• 2012.04a
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• pp.447-460
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• 2012

현재 위험물 운송 사고는 점차 감소하는 추세이지만 위험물 운송 사고는 특성상 한번의 사고로 인해 주변의 인명 및 환경에 막대한 피해를 입히게 된다. 이러한 위험물 운송 사고의 대응을 위해 각 기관들이 있지만 기관별로 메뉴얼 및 방침이 다르게 적용되어 있어 운송 사고에 대한 정확한 정보전달이 미비한 실정이다. 결과적으로 운송사고에 대한 정보가 부족하여 잘못된 대응계획으로 사고처리가 늦어질 수도 있다. 사고시 적절한 대응을 위해서는 위험물질의 종류와 양, 사고위치, 주변상황 등에 대한 정보가 전달되어야 사고대응에 대한 장비, 인력 편성 등 정확한 대응이 이루어질 수 있다. 현재 국내의 정부 유관기관별로 위험물질 사고대응메뉴얼을 구축하여 제공하고 있으나, 운송 및 수송 사고에 대한 사고대응메뉴얼의 부재로 2차적인 피해가 발생되고 있다. 따라서 본 논문에서는 위험물질의 표준화하고 이에 대한 사고대응매뉴얼을 개발하여 위험물 운송 사고시 사고에 대한 정보를 유관기관에게 신속 정확하게 전파하여 통합적인 초동대응이 이루어질 수 있도록 하였다.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.403-410
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• 1997

본 연구는기존의 보고에서 보다 감광화효율을 더욱 향상시키기 위하여 결정형이 다른 전하발생물질 (CGM:Charge Generation Material)과 전하수송물질(CTM:Charge Transport Material)을 사용하여 감광체를 만들었고, 이들의 정전특성을 비교검토하였다. 전하발생물질로서 결정형이 다른 $\alpha$-, $\beta$-, x-형 무금속 프탈로시아닌 (H$_{2}$Pc)을 사용한 결과, x-H$_{2}$Pc를 사용한 감광체의 감도는 E$_{1}$2/의 값이 2.62 $\mu$J/$\textrm{cm}^2$로 가장 두수하게 나타났다. 전하발생층(CGL:Charge Generation Layer)에 첨가되는 CGM-CTM, CGM-CTM-ZnO로 구성된 감광체보다 전하발생층에 전하발생계만으로 구성된 감광체의 경우의 전하유지율 (80%) 및 감도(E$_{1}$2/=2.83$\mu$J/$\textrm{cm}^2$)면에서 우수함을 보여주었다. 한편 binder로서 PVB-co-PVA-co-PVA$_{c}$[poly(viny1 butyral-co-viny1 alcohol-co-viny1 acetate)]를 사용했을 때는, CGM-CTM으로 구성된 감광체보다 CGL에 CGM-CTM으로 구성된 감광체의 경우의 전하유지율(71%) 및 감도(E$_{1}$2/=2.62$\mu$J/$\textrm{cm}^2$)면에서 우수함을 보여주었다.

• Applied Microscopy
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• v.26 no.1
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• pp.47-57
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• 1996

This study analysed the transport properties of bladder mucosa known as the typical system of 'tight epithelia' by using TEM observation with both rapid freeze-fracture electron microscopy and thin-section method and mainly analysed the cellular characteristics of turtle bladder epithelial cells. The bladder epithelium, like other tight epithelia, consists of a heterogenous population of cells. The majority of the mucosal cells are the granular cells and may function primarily in the process of active $Na^+$ reabsorption in turtle bladder. The remaining two types of cells are rich in mitochondria and is believed to be res-ponsible for a single major transport system, namely, $H^+$ transport by A-type of cell and urinary $HCO_{3}^-$ secretion by B-type of cell. As viewed in freeze-fracture electron micrograph, the tight junctions form a continuous tight seal around the epithelial cells, thus restricting diffusion in tight epithelia. In addition, the apical surface membranes have a population of rod-shaped intramembranous particles (IMPs). It is believed that these IMPs probably represent the components of the proton pump. However, it is likely that these characteristics of the apical transporter remain to be clarified in tight epithelial cells.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.455-461
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• 2023

We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.10
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• pp.1-7
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• 2018

Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.39-42
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• 1999

Nitrogen-doped SiC(3C) (N-SiC(3C)) epliayers were grown on Si(111) substrate at $1250^{\circ}C$ using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane(TMS) in $H_{2}$ carrier gas. SiC(3C) layer was doped using $NH_{3}$ during the CVD growth to be n-type conduction. Physical properties of N-SiC(3C) were investigated by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) patterns, Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Hall measurement, and current-voltage(I-V) characteristcs of the N-SiC(3C)/Si(p) diode. N-SiC(3C) layers exhibited n-type conductivity. The n-type doping of SiC(3C) could be controlled by nitrogen dopant using $NH_{3}$ at low temperature.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.59-64
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• 2008

In this paper, white polymer light emitting diodes(WPLEDs) were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as anode and hole injection materials, PFO [poly(9,9-dioctylfluorene)] and MEH-PPV [poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. The LiF(lithium flouride) and Al(aluminum) were used electron injection materials and cathode materials. Finally, the WPLED with structure of ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al was fabricated. The prepared WPLED showed white emission with CIE coordinates of (x=0.36, y=0.35) at the applied voltage of 9V. The maximum current density and luminance were about $740mA/cm^2\;and\;900cd/m^2$ at 13V, respectively. And the maximum current efficiency was 0.37 cd/A at $200cd/m^2$ in luminance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.264-265
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• 2010

최근, nanorod나 nanowire와 같은 1차원의 나노구조가 나노디바이스로 각광을 받고 있다. [1] 특히 InN는 3족 질화물 반도체 중 가장 작은 밴드갭 에너지와 뛰어난 수송 특성을 가지고 있어 나노디바이스로의 응용에 적합한 물질이다. [2] 그러나 InN는 큰 평형증기압을 가지므로 쉽게 인듐과 질소로 분해되는 특성이 있어 나노구조로의 성장이 쉽지 않음이 알려져 있다. [3] 최근 연구결과에 따르면, InN 나노구조는 금속 catalyst를 사용한 방법이나, 기판 위 패턴을 이용하여 성장하는 방법, 염소를 사용한 방법이 널리 쓰이고 있다. [4,5,6] 그러나 이 방법들은 의도치 않은 불순물의 원인이 되거나 다른 추가적인 과정을 필요로 한다는 문제점도 일부 가지고 있다. 본 연구에서는 catalyst-free 유기 금속 화학 증착법 (MOCVD)를 이용하여 $Al_2O_3$ (0001)면 위에 InN nanostructure를 성장하였다. InN nanostructure 성장 시 트리메틸인듐(TMIn)과 암모니아($NH_3$) 를 전구체로 사용하였으며, 캐리어 가스로는 질소를 사용하였다. 또한 모든 샘플의 성장시간은 60분으로 고정하였으나, 성장 시 온도의 의존성을 보기 위해 $680-710^{\circ}C$ 의 온도범위에서 성장을 진행하였다. 그 결과 InN는 본 실험에서 적용된 성장온도범위 내에서 온도가 증가함에 따라 초기에는 columnar구조로 성장된 박막의 형태에서 wall이 배열된 형태로 변화하며 결국 $710^{\circ}C$ 의 온도에서 nanorod로 성장하게 된다. 성장된 InN의 나노구조는 X-선 회절 측정법, 주사 전자 현미경 그리고 투과 전자 현미경을 이용하여 각각의 구조적 특성을 분석하였다. X-선 회절 측정법과 주사 전자 현미경을 통한 분석결과에서는 이들 nanorods가 대부분 c 방향으로 수직하게 정렬되어 있음을 확인 할 수 있었다. 또한, $690^{\circ}C$ 에서 60분간 성장된 InN의 wall 구조의 두께는 200 nm, 길이는 $2-2.5\;{\mu}m$로 관찰되었으며, $710^{\circ}C$에서 60분간 성장된 InN nanorod의 지름은 150 nm, 길이는 $3\;{\mu}m$ 정도로 관찰되었다. 이를 통하여 볼 때 성장 온도가 InN의 나노구조 형성 시 표면의 모폴로지변화에 중요한 변수로 작용함을 알 수 있다. 본 발표에서는 이러한 표면 형상 및 구조 변화가 성장온도에 따른 관계성을 가짐을 InN의 분해와 성장의 경쟁적인 관계에 의해 논의할 것이다.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.91-96
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• 2021

The enhancement of thermoelectric figure of merit was achieved by the simple processes of sieving and high energy ball milling, respectively, which are enable to reduce the grain size of n-type Bi₂Te₃ thermoelectric materials. By optimizing the grain size, the electrical conductivities and thermal conductivities were controlled. In this study, spark plasma sintering was employed for hindering the grain growth during the sintering process. The thermoelectric figure of merit was measured to be 0.78 in the samples with 30 min high energy ball milling process. Notably, this value was 40 % higher than that of pristine Bi₂Te₃ sample. This result shows the properties of thermoelectric materials can be readily controlled by optimization of grain size via simple ball milling process.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.23-28
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• 2008

To improve the external quantum efficiency by means of the optimization of the polymer light emitting diodes(PLEDs) structure, the PLED with ITO/PEDOT:PSS/(PFO)/PFO:MEH-PPV/LiF/Al structure were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly (3,4-ethylenedioxythiophene): poly(styrene sulfolnate)] were used as transparent anode film and hole transport materials, respectively. PFO[poly(9,9-dioctylfluorene)] and MEHPPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and dopant materials. The doping concentration of MEH-PPV was 9wt% with thickness of about $400{\AA}$. We investigated the dependence of the PFO thickness ranging from $200{\AA}$ to $300{\AA}$ on the electrical, optical properties of PLEDs. Among prepared PLED devices with different PFO thicknesses, the highest value of the luminance was obtained for the PLED device with $250{\AA}$ in thickness. As a result, the current density and luminance ware found to be about $400mA/cm^2$ and $1500cd/m^2$ at 13V, respectively. In addition, the luminance and current efficiency of PLED device with double emitting layer (PFO/PFO:MEH-PPV) were improved about 3 times compared with the one with single emitting layer (PFO:MEH-PPV).