• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1753-1755
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• 1996

This paper presents an analysis of the 3D microwave oven considering its forming. The results were compared with experimental data. Finite Element Method(FEM) using edge clement is employed for the analysis. For solving the large sparse system matrix equation was solved using the parallelized QMR method. Analysis of the 3d cavity has troublesome difficulties such as spurious solutions, too many memory and long computation time. We overcome this difficulties by using edge clement for spurious solutions and the parallelized QMR method by the aid of Paralle Virtual Machine(PVM) for the memory and computation time.

• Journal of the East Asian Society of Dietary Life
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• v.4 no.2
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• pp.45-49
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• 1994

The rapid preparaton method of soybean curd with ultra fine soy powder at home was investigated. The microwave oven of this study used common microwave attached sensor for the volume and temperature control, The temperature of the microwave oven was maintained at 98, not boiling over. It took 9 minutes to make 300g of soybean curd, 10 minutes to make 600g, 14 minutes to make 900g, and 17 minutes to make 1200g. Beany flavor and trypsin inhibitor could be removed by this conditon. It took only 5 min to make coaguation of the curd by glucono-$\delta$-lactone.

• Journal of Ginseng Research
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• v.17 no.1
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• pp.35-38
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• 1993

A new and rapid method for the hydrolysis of ginsenosides to panaxadiol or panaxatriol was developed. It is based on the microwave oven reaction, which is high temperature and high-pressure reaction. The optimal hydrolysis time using 5% $H_2SO_4$ solution was found at 10 min PTFE reaction vessel in microwave oven, which is more than 30 times faster than the conventional hydrolysis method.

• Korean Journal of Food Science and Technology
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• v.34 no.6
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• pp.969-976
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• 2002

The migrating level of di-(2-ethylhexyl) adipate (DEHA) in PVC wrap to various foodstuffs dishes was determined using acetone/n-hexane as an extracting solvent. The recovery ratio of DEHA from various foodstuffs ranged from 81.3 to 91.2%. During storage at $10\;or\;20^{\circ}C$ for up to 3 days, highest migration of 22.9 mg/kg occurred with pork belly, an indication that increases in fat content, storage temperature, and storage time result in increasing DEHA migration. DEHA concentrations of various delivered dishes ranged between 6.9 and 29.8 mg/kg, and highest migration was observed in Chambbong, which had the highest fat content among samples. After microwave-reheating, which resulted in a tight contact between film and food samples, DEHA was not detected in rice and potato, whereas up to 158.8 mg/kg was detected in pizza. When the wrap film was not contacted with the surface of food, the migration was lowered. Migration levels of DEHA from PVC wrap film into samples under various exposure conditions often exceeded the limit value of $3\;mg/dm^2\;and/or\;18\;mg/kg$ set by the European Union.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.

• Laser Solutions
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• v.16 no.2
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• pp.16-18
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• 2013

In this paper, we fabricated breathable films on the use of microwave oven by using UV nanosecond laser micromachining, and the number of micro-grooves on the film is controlled for different oxygen transfer rate(OTR). As different number of micro-groove, the breath films of 100,000cc, 120,000cc, and 150,000cc can be fabricated. The breath film package of 120,000cc is used for the experiment of steaming a sweet potato. At the result, the sweet potato is well-cooked with enough moisture in the package not bursted.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1994.10a
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• pp.144-149
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• 1994

반도체 산업계에 있어서 IC 등을 주류로 하는 마이크로칩의 생산성 및 성능이 현저히 성장하여 많은 경제효과를 가져오고 있다. 이와함께 전자부품에 사용되어지는 취성재료의 종류 및 그양도 점점 증가하는 추세이다. 이러한 취성재료의 절단에는 초극박의 다이야몬드 브레이드가 널리 사용되어지고 있다. 실리콘웨이퍼와 같은 취성재료의 다이싱가공에서 문제가 되고있는것은 칩핑과 사행현상의 발생이다. 사행현상의 원인으로서는 브레이드축면의 비대칭성,절삭날의 둔화,숫돌축과 이송방향의 위치결정오차,후렌지 단면의 흔들림등을 들수 있다. 그러나, 사행의 발생영역과 사행이 계속되는 이유에 대해서는 전혀 검토되어진바 없는것이 현실이다. 본 연구에서는 다이싱가공시의 사행현상에 주목해서 사행현상의 발생영역을 명확하게 함과 동시에 AE 센서를 이용하여 인프로세서로 사행현상의 검출방법을 개발하는 것을 목적으로 한다.

• The Korean Journal of Food And Nutrition
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• v.7 no.1
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• pp.64-82
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• 1994

1. 포장재료에서는 기능성필름, 전자레인지, 조리식품의 포장쪽으로 다층복합필름, 중공성형용기, 완전분해성 플라스틱필름과 같은 새로운 무공해 신소재가 개발될 것이다. 2. 포장제품의 차별화로 인하여 다양성 추구가 이루어질 것이다. 노인층의 증가, 젊은층의 유행 등으로 포장재료의 형태, 디자인의 패션화 등 목적에 따라 다양화 될 전망이다. 3. 환경보호를 위한 자원절약과 감량화 등이 규제에 따라 적정포장이 적극적으로 이루어질 것이다. UR개방과 GR에 대비해 포장설계로부터 폐기물에 이르기까지 자원절약형, 감량화, 대체품 개발, 가급적 포장재 단일화 성향으로 갈 것이다. 4. 생산기계에서부터 포장기계 및 물류 등의 고속화 및 전 자동화 시스템으로 개발될 것이다. 인건비 절감, 생산성 향상, 합리적 유통 구조개선이 이루어질 것이다. 5. 포장기술의 다양한 연구개발과 응용이 이루어져야겠다. 국내의 식품포장 연구는 매우 미미한 수준이며 기초연구에서부터 응용에 이르기까지 확산되어야 할 것이다. 식품의 무균화 및 무균포장기술, CA/MA포장기술, 전자렌지식품의 포장기술, 물류관리를 위한 포장 표준화, 포장식품의 보관 수명 연구, 식품과 포장재료의 유해성 연구 등 다양한 연구가 이루어져야 할 것이다. 6. 국내 포장교육의 전문기관으로 학과설립의 확대가 이루어져 업체의 요구에 부응하여야 될 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.248-249
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• 2008

ZnO (Zinc Oxide) thin film can be applied to various devices. Recently, ZnO film has been promoted in transparent TFTs (thin film transistors) because of high transparency and low temperature process. In this paper, ZnO thin films were grown on glass with the three conditions of RF sputtering power, which are 50W, 75W, 100W. Their structural, electrical and optical properties were investigated by using XRD, UV-Visible spectrometer and 4-point probes. In the ZnO film with 50W process, good crystallinity, high transmittance, and high sheet resistance were shown. In conclusion, the ZnO film with 50W can be an optimal channel layer of TFTs.