• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.55-61
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• 2022

In this study, properties of Pb-free solder joints which were combined using Sn-3.0Ag-0.5Cu (SAC305) Pb-free solder with a mid-temperature type of melting temperature and Sn-57Bi-1Ag Pb-free solder with a low-temperature type of melting temperature were reported. Combined Pb-free solder joints were formed by reflow soldering processes with ball grid array (BGA) packages which have SAC305 solder balls and flame retardant-4 (FR-4) printed circuit boards (PCBs) which printed Sn-57Bi-1Ag solder paste. The reflow soldering processes were performed with two types of temperature profiles and interfacial properties of combined Pb-free solder joints such as interfacial reactions, formations of intermetallic compounds (IMCs), diffusion mechanisms of Bi, and so on were analyzed with the reflow process conditions. In order to compare reliability characteristics of combined Pb-free solder joints, we also conducted thermal shock test and analyzed changes of mechanical properties for joints from a shear test during the thermal shock test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.500-504
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• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.187-192
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• 2023

This paper deposited CdTe thin films on ITO glass substrates using sputtering equipment while changing RF power. As a result of measuring the thickness of the thin film, 1481Å at 100W, 2985Å at 150W, and 4684Å at 200W. And the mobility was measured as 8.43 cm2/Vs for 100W, 7.91 cm2/Vs for 150W, and 6.57 cm2/Vs for 200W. It can be seen that the thickness and mobility of the thin film are inversely proportional. As a result of confirming the transmittance, the transmittance was 84% at 905nm for 100W, the transmittance was 71% at 825nm for 150W, and 77% at 874nm for 200W. At 100 W, the thickness of the thin film was thin, so the transmittance was measured to be high. In other words, the correlation between transmittance and thickness can be seen. As a result of measuring the FHWM and particle size by changing the RF Power, 100W was calculated as 0.18, 150W was calculated as 0.19, and 200W was calculated as 0.73. The size of the particles was formed at 8.47Å at 100W, 7.98Å at 150W, and 8.7Å, which is the largest at 200W. In conclusion, it was found that the FHWM and particle size were inversely proportional.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.128-133
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• 1995

Yttrium Iron Garnet($Y_{3}Fe_{5)O_{12}$) films have been succsssfully grown on(111)GGG wafer by KrF excimer laser ablation of stoichiometric garnet target at the oxygen partial pressure, $P(O_{2}$, ranging 20 to 500 mTorr. During the deposition of the films the substrate temperature was maintained at $700^{\circ}C$ and the laser beam energy density at $7.75\;J/cm_{2}$. Microstructure, composition and magnetic properties of the films obtained were investigated as a function of oxygen pressure and thickness of the films. Epitaxial films with a dense and a smooth surface were reproducible at a low oxygen pressure. The films of $2.75\;{\mu}$ min thickness deposited at 20 mTorr of $P(O_{2})$ showed $4{\pi}M_{s}$ of 1500 Gauss and $H_{c}$ of 3 Oe after annealing at $800\;^{\circ}C$ for 20 minutes. As-deposited films of $0.8\;\mu\textrm{m}$ in thickness exhibited the $4{\pi}M_{s}$ of 1730 Gauss and $H_{c}$ of 7 Oe. The magnetic properties of the films obtained were almost identical to those of a single crystal YIG.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.40-50
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• 2023

Recently, the number of components of smartphones increases rapidly, while the PCB size continuously decreases. Therefore, 3D technology with a stacked PCB has been developed to improve component density in smartphone. For the s tacked PCB, it i s very important to obtain solder bonding quality between PCBs. We investigated the effects of the properties, thickness, and number of layers of interposer PCB and sub PCB on warpage of PCB through experimental and numerical analysis to improve the reliability of the stacked PCB. The warpage of the interposer PCB decreased as the thermal expansion coefficient (CTE) of the prepreg decreased, and decreased as the glass transition temperature (Tg) increased. However, if temperature is 240℃ or higher, the reduction of warpage is not large. As FR-5 was applied, the warpage decreased more compared to FR-4, and the higher the number and thickness of the prepreg, the lower the warpage. For sub PCB, the CTE was more important for warpage than Tg of the prepreg, and increase in prepreg thickness was more effective in reducing the warpage. The shear tests indicated that the dummy pad design increased bonding strength. The tumble tests indicated that crack occurrence rate was greatly reduced with the dummy pad.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.8-16
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• 2023

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO₂ structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO₂ structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO₂. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.61-68
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• 2023

In this study, Sn-3.5Ag-15.0Fe composite solder was manufactured and applied to TLP bonding to change the entire joint into a Sn-Fe IMC(intermetallic compound), thereby applying it as a high-temperature solder. The FeSn₂ IMC formed during the bonding process has a high melting point of 513℃, so it can be stably applied to power modules for power semiconductors where the temperature rises up to 280℃ during use. As a result of applying ENIG surface treatment to both the chip and substrate, a multi-layer IMC structure of Ni₃Sn₄/FeSn₂/Ni₃Sn₄ was formed at the joint. During the shear test, the fracture path showed that cracks developed at the Ni₃Sn₄/FeSn₂ interface and then propagated into FeSn₂. After 2hours of the TLP joining process, a shear strength of over 30 MPa was obtained, and in particular, there was no decrease in strength at all even in a shear test at 200℃. The results of this study can be expected to lead to materials and processes that can be applied to power modules for electric vehicles, which are being actively researched recently.

• Journal of Advanced Navigation Technology
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• v.25 no.6
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• pp.536-542
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• 2021

In this paper, we proposed a triple band printed monopole antenna with a bent branch strips for WiFi / 5G. An antenna structure in which bent strips for generating multiple resonance are attached in the form of branches was newly proposed based on a typical monopole strip vertically erected as a triple band antenna structure. The proposed antenna is designed on a FR-4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of 28×40 mm². The measured impedance bandwidth is 430 MHz (2.22~2.65 GHz) in the 2.4 GHz WLAN, 450 MHz (3.38~3.83 GHz) in the 3.5 GHz and 2390 MHz (4.95~7.34 GHz), In particular, it has been observed that antenna has a stable omnidirectional radiation patterns as well as gain of 1.537 dBi, 1.878 dBi and 2.337 dBi in the entire frequency band of interest.

• Industry Promotion Research
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• v.9 no.1
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• pp.21-29
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• 2024

In the rapidly advancing information society, electronic devices, including smartphones and tablets, are increasingly digitized and equipped with high-performance features such as flexible displays. This study focused on optimizing the manufacturing process for Transparent Conductive Films (TCF) by using the cost-effective conductive polymer PEDOT and transparent substrate PET as alternatives to expensive materials in flexible display technology. The variables considered are production speed (m/min), coating maximum temperature (℃), and PEDOT supply speed (rpm), with surface resistivity (Ω/□) as the response parameter, using Response Surface Methodology (RSM). Optimization results indicate the ideal conditions for production: a speed of 22.16 m/min, coating temperature of 125.28℃, and PEDOT supply at 522.79 rpm. Statistical analysis validates the reliability of the results (F value: 18.37, P-value: < 0.0001, R²: 0.9430). Under optimal conditions, the predicted surface resistivity is 145.75 Ω/□, closely aligned with the experimental value of 142.97 Ω/□. Applying these findings to mass production processes is expected to enhance production yields and decrease defect rates compared to current practices. This research provides valuable insights for the advancement of flexible display manufacturing.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.72-79
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• 2024

To realize high speed and high bandwidth in the 2.xD package structure, methods requiring high technology are being studied for processes such as interposer or bridge die bonding, as well as heterogeneous chip bonding. Particularly, the grinding process of bonding surfaces is considered a key technology. The method of bonding an interposer or bridge die including Cu layers to a substrate and then exposing metallic materials such as Cu, which can be electrically connected, through a grinding process to connect heterogeneous chips is an approach that utilizes conventional packaging techniques. However, to meet the yield and quality standards required for mass production in processes involving the large-scale bonding of micro-bumps, as seen in 2.xD packages, it is essential to develop techniques based on high precision. This paper investigates the multi-material grinding process for heterogeneous chip bonding in a 2.xD package structure, using the grit size of the grinding wheel as a variable. The study examines the surface patterns and bonding characteristics of the exposed materials achieved through the grinding process. Through this study, we aim to optimize the grinding process for high-quality bonding, thereby contributing to the development of advanced packaging technologies.