• Journal of the Korean Solar Energy Society
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• v.30 no.6
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• pp.73-80
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• 2010

This study was conducted to estimate the relative performance of modules with changed characteristics due to long term exposure to the outdoor environment, with a specially made test device for simultaneous measurement of real time power output from the photovoltaic array, taking into account the inclined panel, direct irradiation, power being generated, temperature as well as the optimal analysis timing. In terminology description, M is an abbreviation of module and Group A, Group B are 10 modules series connection (1~10 of M), (11~20 of M) for each of them respectively. The overall mean voltage difference of M-18 with the lowest power output and M-14 with the highest output is-2.13V and it was identifiable that voltage difference was more concentrated to Group B. In addition, in case of M-2 and M-7, M-8, when compared with M-14, the overall mean voltage difference was -0.92V, -1.56 and -0.91V respectively showing the more concentration to Group A. When the temperature of module went up by $1^{\circ}C$, the mean voltage was reduced by 0.35V. For current, Group A was lower than Group B by-0.022A and the ratio of each group was 49.68% and 50.32% respectively, presumably the module with deteriorated properties were more concentrated to Group A relatively. From the comparison of relations with the comprehensive accumulation, M-2, M-7, M-8, M-16 and M-18 were those with deterioration of performance to the worst, thereby requiring precision examination. In comparative efficiency, M-14 was the most excellent one as 12.19% while M-18 as 10.53% was identified that its efficiency was comparatively rapidly reduced.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.42 no.4 s.304
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• pp.167-176
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• 2005

This paper proposes a new power minimization technique for the frame-based multimedia signal processing. The derivation of the technique is based on the newly proposed microscopic DVS(Dynamic Voltage Scaling) method, where, the operating frequency and the supply voltage levels are dynamically controlled according to the processing requirement for each frame of multimedia data. The multimedia signal processing algorithms are also redesigned and optimized to maximize the power saving efficiency of the microscopic DVS technology. The characterization of the mean/variance distribution of the processing load in the frame-based multimedia signal processing provides the major basis not only for the optimized application of the microscopic DVS technology but also for the optimization of the multimedia algorithms. The power saying efficiency of the proposed DVS approach is experimentally tested with the algorithms of MPEG-2 video decoder and MPEG-2 AAC audio encoder on the ARM9 RISC processor. The experimental results with the diverse MPEG-2 video and audio files show The average power saving efficiencies of 50$\%$ and 30$\%$, respectively. The results also agree very well with those of the analytic derivations.

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.216-220
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• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.219-224
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• 2012

We study for long-term performance of amorphous silicon solar cells under light exposure. The performance is predicted with a kinetic model in which the carrier lifetimes are determined by the defect density. In particular, the kinetic model is described by the stretched-exponential relaxation of defects to reach equilibrium. In this report, we simulate the light-induced degradation of the amorphous silicon solar cells with the kinetic model and AMPS-1D computer program. And data measured for outdoor performances of various solar cells are compared with the simulated results. This study focuses on examining the light-induced degradation for the following amorphous silicon pin solar cells: thickness${\approx}$300 nm, built-in potential${\approx}$1.05 V, defect density (at t=0)${\approx}5{\times}10^{15}cm^{-3}$, short-circuit current density (at t=0)${\approx}15.8mA/cm^2$, fill factor (at t=0)${\approx}0.691$, open-circuit voltage (at t=0)${\approx}0.865V$, conversion efficiency (at t=0)${\approx}9.50%$.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.423-429
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• 1997

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.6
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• pp.66-73
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• 2002

This paper presents ZVZCS(Zero-Voltage and Zero-Current Switching) Three Level DC/DC Converter without primary freewheeling diodes. The new converter presented in this paper used a phase shirt control with a flying capacitor in the primary side to achieve ZVS for the outer switches. A secondary anxiliary circuit which consists of one small capacitor, two small diodes and one coupled inductor, is added in the secondary to provide ZVZCS conditions to primary switches, ZVS for outer switches and ZCS for inner switches. Many advantages include simple secondary auxiliary circuit topology, high efficiency, and low cost make the new converter attractive for high power applications. Also the circulating current flows through the circuit so that it causes the needless coduction loss to be occurred in the devices and the transformer of the circuit The new converter has no primary auxiliary diodes for freewheeling current. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 1[㎾］ 50[KHz］IGBT based experimental circuit.

• Resources Recycling
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• v.13 no.2
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• pp.39-46
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• 2004

The amount of electric furnace dust has been steadily increasing due to the increase of iron scraps which are usually recycled by electric furnace melting process. To date, this electric furnace dust has usually been treated by landfilling, however, because of shortage of landfill sites and heavy metal leaching more desirable treatment schemes are urgently needed. Among several possible schemes for the proper treatment of electric furnace dust, its recycling can be said to be most desirable. In present study, the triboelectrostatic separation of zinc and zinc-containing components from electric furnace dust was attempted based on its physicochemical properties such as particle shape, size distribution, and chemical assay. The dust was found to be mixed with spherical and non-spherical shaped particles and its major component materials were $ZnFe_2$$O_4$, ZnO, Fe, Zn, and FeO. The content of zinc-containing components in the entire dust was observed to be in the range of 15～30 wt%, which reasonably justified that zinc is recyclable. The triboelectrostatic characteristic of each component material was found to be different each other since their work functions were different, and based on this characteristic zinc and zinc-containing component could be flirty separated from the dust. After selecting a proper tribo-elec-trification material, the separation features of zinc and zinc-containing component were examined by taking the distance of electrodes, electric field strength, and scavenging as the experimental variables. The highest zinc-content obtained under the optimal separating condition was found to be up to 50wt%.

• Journal of Soil and Groundwater Environment
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• v.10 no.4
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• pp.18-25
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• 2005

Characteristics of phenanthrene removal in an electrokinetic (EK)-Fenton process were investigated in a viewpoint of concentration and ionic strength of electrolytes. When three kinds of electrolytes (NaCl, $KH_2PO_4,\;and\;MgSO_4$) were used, the increase in electrolyte concentration caused the decrease of electrical potential gradient. The increase of electrical conductivity was due to the increase of ionic concentration in soil. The decrease of accumulated electroosmotic flow (EOF) with increase in electrolyte concentration was due to the decrease of zeta potential. The removal efficiency was in proportion to accumulated EOF which depended on ionic strength. Total energy expenditure without electrolyte was 10-30 times higher than its with 0.5 M electrolyte. The lower removal efficiency was caused by the lower energy expenditure with 0.5 M one. An effective EK-Fenton process was determined from considering the removal efficiency and the energy expenditure, simultaneously.