• Journal of Radiation Protection and Research
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• v.21 no.2
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• pp.139-143
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• 1996

A multi-wire proportional counter with large sensitive area was designed and constructed considering diameter of anode wire. its material and space. A preamplifier connecting detector to main amplifier or counter was also designed and constructed for measurement output pulse from multi-wire proportional counter. The preamplifier was composed of charge-sensitive differential circuit. clipping circuit and amplification circuit. To test the performance of this equipment, terminal output pulse from the preamplifier was measured and compared with noise For these tests $^{239}Pu(360 Bq)\;and\; ^{90}Sr/^{90}Y(250 Bq)$ were used as radiation sources. The noise ingredient contributing to the maximum amplitude(180mV from $^{239}Pu$ and 200 mV from $^{90}Sr/^{90}Y$) was found to be very small(8 mV) Piled up pulse occurring at the output pulse of charge-sensitive differential circuit was measured as an independent pulse since this affected the amplification in the clipping circuit and amplification circuit. This information can be used to improve the loss of measurement due to piled up pulse.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.107-107
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• 2000

최근 반도체 소자의 고집적화 및 대용량화의 경향에 다라 MOSFET 소자 제작에 이동되는 게이트 산화막의 두께가 수 nm 정도까지 점점 얇아지는 추세이고 Giga-DRAM급 차세대 UNSI소자를 제작하기 위해 5nm이하의 게이트 절연막이 요구된다. 이런 절연막의 두께감소는 게이트 정전용량을 증가시켜 트랜지스터의 속도를 빠르게 하며, 동시에 저전압동작을 가능하게 하기 때문에 게이트 산화막의 두께는 MOS공정세대가 진행되어감에 따라 계속 감소할 것이다. 따라서 절연막 두께는 소자의 동작 특성을 결정하는 중요한 요소이므로 이에 대한 정확한 평가 방법의 확보는 공정 control 측면에서 필수적이다. 그러나, 절연막의 두께가 작아지면서 게이트 산화막과 crystalline siliconrksm이 계면효과가 박막의 두께에 심각한 영향을 주기 때문에 정확한 두께 계측이 어렵고 계측방법에 따라서 두께 계측의 차이가 난다. 따라서 차세대 반도체 소자의 개발 및 양산 체계를 확립하기 위해서는 산화막의 두께가 10nm보다 작은 1nm-5nm 수준의 박막 시료에 대한 두께 계측 방법이 확립이 되어야 한다. 따라서, 본 연구에서는 습식 산화 공정으로 제작된 3nm-7nm 의 게이트 절연막을 현재까지 알려진 다양한 두께 평가방법을 비교 연구하였다. 절연막을 MEIS (Medim Energy Ion Scattering), 0.015nm의 고감도를 가지는 SE (Spectroscopic Ellipsometry), XPS, 고분해능 전자현미경 (TEM)을 이용하여 측정 비교하였다. 또한 polysilicon gate를 가지는 MOS capacitor를 제작하여 소자의 Capacitance-Voltage 및 Current-Voltage를 측정하여 절연막 두께를 계산하여 가장 좋은 두께 계측 방법을 찾고자 한다.다. 마이크로스트립 링 공진기는 링의 원주길이가 전자기파 파장길이의 정수배가 되면 공진이 일어나는 구조이다. Fused quartz를 기판으로 하여 증착압력을 변수로 하여 TiO2 박막을 증착하였다. 그리고 그 위에 은 (silver)을 사용하여 링 패턴을 형성하였다. 이와 같이 공진기를 제작하여 network analyzer (HP 8510C)로 마이크로파 대역에서의 공진특서을 측정하였다. 공진특성으로부터 전체 품질계수와 유효유전율, 그리고 TiO2 박막의 품질계수를 얻어내었다. 측정결과 rutile에서 anatase로 박막의 상이 변할수록 유전율은 감소하고 유전손실은 증가하는 결과를 나타내었다.의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.71.2-71.2
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• 2010

고체산화물연료전지는 청정에너지원으로써 기존의 발전방식을 대신할 차세대 에너지원으로 각광 받고 있다. 고체산화물 연료전지는 고온에서 작동하는 특성상 실험을 통하여 전극미세구조 및 구동조건을 최적화하는 것은 매우 어렵다. 본 연구는 전기화학식을 이용한 전산모사를 통해서 고체산화물 연료전지의 구동조건에 따른 성능 평가 및 전극의 미세구조 최적화 과정을 수행하였다. 전극 내 전달현상을 무시하고 오직 전기화학반응만을 고려한 전산모사는 단전지의 전극미세구조 및 구동조건에 따른 전지성능을 빠르게 예측할 수 있으며, 이를 기반으로 다양한 조건에서 얻은 전지 성능 데이터를 통해 전극미세구조를 최적화하였다. 개회로전압, 활성화분극, 저항분극, 물질수송손실을 표현하기 위하여 Nernst 식, Butler-Voler 식, 옴의 법칙, dusty-gas 모델을 각각 사용하였으며, 전극미세구조 및 구동조건의 변화는 물질확산계수 및 교환전류밀도를 통하여 그 영향이 전지성능에 반영된다. 온도, 압력, 주입 연료의 조성에 대한 성능평가가 수행되었으며, 1023K, 1 bar의 조건하에서 최적의 단전지 성능을 위한 기공도와 기공크기를 조사하였다. 더 향상된 단전지 성능 확보를 위해서 실험에서 쓰이는 기능층(functional layer)과 유사하게 넓은 반응 면적과 원활한 반응물 및 생성물의 이동을 보장하도록 기공도 및 기공크기를 그레이딩한 전극구조(graded-electrode)를 디자인하고 성능을 평가하였다. 그 결과 기존의 전지구조 대신에 그레이딩된 전극을 사용할 경우 50%이상 향상된 전지성능을 예측할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.464-470
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• 2004

The electrical stability of ZPCCY-based varistors composing of ZnO-Pr$_{6}$O$_{11}$-CoO-C $r_2$ $O_3$- $Y_2$ $O_3$ ceramics were investigated in various DC accelerated aging stress with sintering times. Sintering time greatly affected electrical properties and stability. Sintering time decreased nonlinear exponent in the range of 51.2∼23.8 and increased leakage current in the range of 1.3∼5.6 ${\mu}$A. The varistor sintered for 1 h exhibited high nonlinearity, whereas relatively low stability. On the contrary, the varistor sintered for 3 h exhibited low nonlinearity, whereas relatively high stability. But the varistor sintered for 2 h exhibited not only good nonlinearity, with nonlinear exponent of 38.6 and leakage current of 3.6 ${\mu}$A but also high stability, in which the variation rates of varistor voltage, nonlinear exponent, leakage current, and dissipation factor are -0.80%, -1.81 %, +74.4%, and +0.88%, respectively.

• Journal of the Korean Society of Propulsion Engineers
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• v.16 no.1
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• pp.25-35
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• 2012

An endwall boundary layer fence technique was adapted to improve the aerothermal environment of a gas turbine passage. The shape optimization of the fence was performed to maximize the improvement. The turbine passage was simulated by a $90^{\circ}$ turning duct (ReD=360,000). The main purpose of the present investigation was to focus on finding a endwall boundary layer fence with minimum total pressure loss in the passage and heat transfer coefficient on the endwall of the duct. Anothor objective function was to minimize the area on the endwall of the duct. An approximate optimization method was used for the investigation to secure the computational efficiency. Results indicated that a significant improvement in aerodynamic environment can be achieved through the application of the fence. Improvement of the thermal environment was smaller than that of the aerodynamic enviroment.

• Journal of Sensor Science and Technology
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• v.11 no.4
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• pp.247-253
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• 2002

For fabrication of the pyroelectric IR sensor $(Pb,La)TiO_3(PLT)$/$LiTaO_3$/(LTO)/PLT ferroelectric thin films was deposited by rf magnetron sputtering followed by rapid thermal annealing and the crystallinity as a function of annealing temperature and time was investigated. Permittivity and dielectric loss factor of ferroelectric thin films as a function of c-axis preffered orientation was measured. Also pyroelectric coefficient of ferroelectric thin films with largest c-axis preffered orientation was measured and obtain figure of merit of voltage response($F_V$) and detectivity($F_D$). In this case $F_V$, $F_D$ was $5.63{\times}10^{-10}\;C{\cdot}cm/J$, $1.98{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• Journal of the Institute of Convergence Signal Processing
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• v.7 no.4
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• pp.195-200
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• 2006

The conventional discrete circuit for ABS/TCS system was examined and the problems of the system were analyzed by computer simulation. In order to improve the performance of ABS/TCS system, interface IC which has error compensation, comparator and under voltage lock-out circuit was designed and their electrical characteristics were investigated. The voltage regulator was included to compensate the temperature variation in the temperature range from $-20^{\circ}C$ to $120^{\circ}C$ for automobile environment. ABS and brake signal were separated using the duty factor of same frequency or different frequencies. UVLO(Under Voltage Lock-Out) circuit and constant current circuit were applied for the elimination of noise, and protection circuit was applied to cut the excess current off. Layout for IC fabrication was designed to enhance the electrical performance of ABS/TCS system. Layout was consisted of 11 masks, arrayed effectively 8 pads to reduce the current loss. We can see that the result of layout simulation was better than the result of bread board.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.04a
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• pp.406-413
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• 2011

This paper presents the shape optimization of a nonaxisymmetric endwall and endwall boundary layer fence which improve the aerothermal environment of a gas turbine passage. The endwall and fence methods were used simultaneously. The turbine passage was simulated by a $90^{\circ}$ turning duct ($Re_D$=360,000). The main purpose of the present investigation was to focus on finding a nonaxisymmetric endwall and boundary layer fence with minimum total pressure loss in the passage and heat transfer coefficient on the endwall of the duct. An approximate optimization method was used for the investigation to secure the computational efficiency. Results indicated that a significant improvement in aerothermal environment can be achieved through the application of a nonaxisymmetric endwall and boundary layer fence.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1067-1072
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• 2003

The electrical stability of the varistor ceramics composed of Zn-Pr-Co-Cr-Dy oxides-based varistors was investigated at 0.0∼2.0 mol% Dy$_2$O$_3$ content under DC accelerated aging stress. The ceramic density was increased up to 0.5 mol% Dy$_2$O$_3$ whereas further addition of Dy$_2$O$_3$ decreased sintered ceramic density. The density sailently affected the stability due to the variation of conduction path. The nonlinearity of varistor ceramics was greatly improved above 45 in the nonlinear exponent and below nearly 1.0 ${\mu}$A by incorporating Dy$_2$O$_3$. Under 0.95 V$\_$1mA/150$^{\circ}C$/24 h stress state, the varistor ceramics doped with 0.5 mol% Dy$_2$O$_3$ exhibited the highest electrical stability, in which the variation rates of varistor voltage, nonlinear exponent, and leakage current were -0.9%, -14.4%, and +483.3%, respectively. The variation rates of relative permittivity and dissipation factor were +7.1% and +315.4%, respectively. The varistors with further addition of Dy$_2$O$_3$ exhibited very unstable state resulting in the thermal runaway due to low density.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.411-418
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• 2000

$Al_2O_3$ thin films of 300 nm thickness were deposited at room temperature using DC reactive sputtering with variation of the $O_2$ content in the sputtering gas from 30% to 70%. Regardless of the $O_2$ content in the sputtering gas, the sputtered $Al_2O_3$ films were amorphous and exhibited the refractive index of 1.58. When the $O_2$ content in the sputtering gas was higher than 50%, the $Al_2O_3$ films exhibited excellent transmittance of about 98% at 550 nm wavelength. However, the transmittance decreased to about 94% for the $Al_2O_3$ films deposited with the sputtering gas of the 30% and 40% $O_2$contents. The optimum dielectric properties (dielectric constant of 10.9 and loss tangent of 0.01) was obtained for the $Al_2O_3$ film deposited with the sputtering gas of the 50% $O_2$ content. When the $O_2$ content in the sputtering gas was within 40% to 60%, the $Al_2O_3$ films exhibited no shift of flatband voltage $V_{FB}$ in C-V curves and exhibited leakage current density lower than $10^{-5}\textrm{A/cm}^2$ at 150 kV/cm.