• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.54-62
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• 2024

SICM (Scanning Ion Conductivity Microscopy) is a technique for measuring surface topography in an environment where electrochemical reactions occur, by detecting changes in ion conductivity as a nanopipette tip approaches the sample. This study includes an investigation of the current response curve, known as the approach curve, according to the distance between the tip and the sample. First, a simulation analysis was conducted on the approach curves. Based on the simulation results, then, several measuring experiments were conducted concurrently to analyze the difference between the simulated and measured approach curves. The simulation analysis confirms that the current squeezing effect occurs as the distance between the tip and the sample approaches half the inner radius of the tip. However, through the calculations, the decrease in current density due to the simple reduction in ion channels was found to be much smaller compared to the current squeezing effect measured through actual experiments. This suggests that ion conductivity in nano-scale narrow channels does not simply follow the Nernst-Einstein relationship based on the diffusion coefficients, but also takes into account the fluidic hydrodynamic resistance at the interface created by the tip and the sample. It is expected that SICM can be combined with SECM (Scanning Electrochemical Microscopy) to overcome the limitations of SECM through consecutive measurement of the two techniques, thereby to strengthen the analysis of electrochemical surface reactivity. This could potentially provide groundbreaking help in understanding the local catalytic reactions in electroless plating and the behaviors of organic additives in electroplating for various kinds of patterns used in semiconductor damascene processes and packaging processes.

• Journal of dental hygiene science
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• v.6 no.4
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• pp.303-307
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• 2006

The objective of this study was to evaluate the effects of the topical application of fluoride by iontophoresis on the fluoride concentration in the dental enamel. Eighty-eight healthy teeth were extracted from orthodontic patients and divided into three experimental groups at 0.2 mA and 0.5 mA current and a control group. Each experimental group was further divided into three subgroups according to the application time (1, 3, and 5 min). Five to six teeth were assigned to each subgroup. Inotophoresis was performed using a 2% sodium fluoride solution and each tooth was sliced into a $3{\times}3mm$ specimen on enamel. The fluoride concentration in the enamel was measured using X-ray photoelectron spectroscopy. It was used to estimate the atomic ratio of fluoride on the enamel surface on selected samples. The specimen was observed via scanning electron microscopy as well. This finding was confirmed by the result that the fluoride ratios estimated by x-ray photoelectron spectroscopy was 2.71%, 2.87% and 3.80% after fluoride iontophoresis had been performed using a 2% sodium fluoride solution at 0.5 mA for 1, 3 and 5 min, respectively. In comparison, the fluoride ratio was 0.49% in the control group. As the current became higher and the time lapsed, the formation of irregular particles was strengthened on the enamel surface. Afterwards, the enamel surface was dissolved and new matrix was formed on the enamel. Fluorapatite was observed on the enamel after fluoride iontophoresis was performed at 0.5 mA for 5 min. The fluoride concentration tended to increase with increasing duration of iontophoresis. The study findings indicated that under proper conditions, fluoride iontophoresis has a positive effect in increasing the fluoride concentration in dental enamel.

• Journal of the Korean Electrochemical Society
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• v.18 no.1
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• pp.7-16
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• 2015

Effects of chemical composition ($Cu^{2+}$, $K_4P_2O_7$ and additive concentrations) of baths on properties of Cu thin films electrodeposited from pyrophosphate copper bath were investigated. Current efficiency was increased to be near 100% with increasing $Cu^{2+}$ concentrations from 0.02 to 0.3M. Decrease of current efficiency was observed in the range of 1.5~1.8M $K_4P_2O_7$ concentration, but current efficiency of about 100% was measured in the ranges of both 0.9~1.3M and 2.1~2.4M. The change of additive concentration did not influenced current efficiency. Residual stress of electrodeposited Cu thin films was measured to be about 20 MPa below 0.15 M $Cu^{2+}$ concentration and increased with the increase of it to 0.25 M. Maximum residual stress of 120MPa was observed at 0.25M $Cu^{2+}$ concentration. On the other hand, residual stress decreased from 80 to near 0 MPa as $K_4P_2O_7$ concentration varied from 0.9 to 2.4M and but The change of additive concentration did not affected on residual stress. $Cu^{2+}$ and $K_4P_2O_7$ concentrations significantly affect on surface morphology of electrodeposited Cu thin films, but additive concentration slightly affected. From XRD analysis, the microstructures of electrodeposited Cu thin film was affected from the changes of $Cu^{2+}$ and $K_4P_2O_7$ concentrations, but not from that of additive concentration. Strong preferred orientation of (111) peak was observed with increasing $Cu^{2+}$ and $K_4P_2O_7$ concentrations.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.39-42
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• 2011

The composite electroplating is accomplished by adding inert materials during the electroplating. Permalloy is the term for Ni-Fe alloy and it is used for industrial applications due to its high magnetic permeability, surface wear resistance, corrosion protection. Microhardness for microdevices is enhanced after composite coating and it increases the life cycle. However, the hydroxyl group on the silica makes their surface susceptible to moisture and it causes the silica nanoparticles to be agglomerated in the aqueous solution. The agglomeration problem causes poor dispersion which eventually interrupts uniform deposition of silica nanoparticles. In this study, the dispersion of silica nanoparticles in the permalloy electroplated layer is reported with variation of additives and current densities. The optimum current density was 20 $mA/cm^2$ and the silica content was 9 at% at $50^{\circ}C$. The amount of silica nanopowder codeposition and surface morphologies were influenced with variation of additives. In the bath, smooth surface morphology and relatively high contents of silica nanopowder codeposition were obtained with addition of sodium lauryl sulfate.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.3
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• pp.44-50
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• 2005

This paper deals with the characteristics and reduction methods of the plasma luminosity caused between the ZnO surge arrester block and metal electrodes. In this study, the impulse current generator that can generate $8/20[{\mu}s]$ impulse currents with a peak short-circuit of 10[kA] is designed and fabricated. Plasma luminosity phenomena for fine and used ZnO blocks were observed as a function of the contact states between the ZnO block and electrodes and the polarity of applied impulse voltages. As a result, discharge luminous events are produced near the contact edges between the ZnO block and metal electrodes. The discharge plasma luminosity between the ZnO surge arrester block and low potential electrode is more intensive than that between the ZnO surge arrester block and high potential electrode. Surface flashover of ZnO blocks are mainly caused by plasma generation near the edge of metal electrode. Also, plasma luminosity for the fine ZnO blocks is less than that for the used ZnO blocks. Plasma luminosity at the contact of the ZnO block and ring-type electrode is more intensive than that at the contact of ZnO block and disk electrode. It is desirable to use the disk electrode with the proper contact area to reduce the plasma luminosity caused at the contact point between the ZnO block and electrodes.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.3-3
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• 2009

선박의 건조과정에서 필수적으로 선체 외판에는 선박의 안전과 운항 및 정비 등에 필요한 정보를 나타내기 위해 다양한 종류의 마크 및 문자가 마킹되어진다. 하지만, 단순한 도장 작업만으로는 해상과 같은 부식 환경에서 마크 및 문자가 쉽게 지워지거나 손상되기 때문에 마크 및 문자를 용접 비드(welding bead)로 표시하거나 미리 절단된 강판(steel plate)을 수동으로 용접한 뒤 도장을 함으로써 마크 및 문자의 손상을 방지하고 있다. 이러한 문자마킹작업을 하기 위해서는 작업자가 수작업으로 기준선과 마크 및 문자의 위치를 먹줄 등을 이용하여 마킹을 하고, 해당 마크 및 문자의 템플렛(template)을 이용하여 펀칭을 실시한 후 수동으로 용접을 실시한다. 하지만, 수작업을 통한 선체외판 문자마킹 작업은 작업자의 기량에 따라 품질이 상이하여 품질 저하의 원인이 된다. 또한 대조립 및 탑재 단계에서 문자 마킹 작업시 수직자세의 용접을 요구함으로써 작업자가 안전사고에 노출되어 있으며, 선박의 각 단계별 주요 공정보다 작업시간이 길어져 전체 선박 건조공정을 지연시키는 문제점 등을 야기시킬 수 있다. 이러한 문제점들을 해결하기 위해 조선업계에서는 선체 외판의 마크 및 문자를 자동으로 용접할 수 있는 장치를 개발하기 위해 노력해왔으며, 몇몇 개발 사례가 보고되고 있다. 하지만, 그 실효성 부분에서는 아직까지 해결하지 못한 문제점들로 인해 현장 적용에는 어려움을 보이고 있다. 본 연구에서는 선박외판 문자 자동용접장치의 기능성뿐만 아니라 현업 적용성을 가장 우선적으로 고려하여 문자마킹장치(Marking Robot for Shipbuilding) 개발을 진행하였다. 우선, 적절한 용접 재료를 선정하기 위해서 솔리드 와이어(Solid Wire)와 플럭스 코어드 와이어(Flux Cored Wire)에 대한 비드온 용접(Bead-On Welding)을 아래보기자세와 수직자세에 대해서 실시하여 적절한 용접 조건을 설정하였다. 본 연구에서 개발된 문자마킹 자동용접장치는 3축으로 구성되어 있으며 각 축들을 분리할 수 있도록 개발하여 이동성을 향상시켰으며, 작업면과 용접토치간의 거리를 일정하게 유지시킬 수 있도록 용접전류 센서(Welding Current Sensor)를 이용하여 토치 높이(Wire Extension)를 제어함으로써 균일한 품질의 용접비드를 얻을 수 있었다. 또한 문자마킹 자동용접장치는 본체 구동부와 제어부(Touch Screen)가 쉽게 분리되고 장착이 가능한 구조로 개발되었으며, 용접시 각 용접자세별로 용접전압, 전류 그리고 용접속도 설정이 가능하여 아래보기 자세뿐만 아니라 어떠한 자세에서도 같은 모양의 비드형상을 가지는 문자마킹용접이 가능하도록 개발하였으며, 이는 실험과 현장적용을 통해 검증하였다.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.3
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• pp.28-35
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• 2006

Recently, a number of equipments related with electricity, electronics, and communication in the same building are needed to the grounding system for safety from unexpected accidents. When the faulted electric current flows into a certain grounding system, the potential rise in that system takes place and it might induce the potential rise to other grounding system. This potential interference was strongly affected by the surface potential, which was deeply related with the electrode shape. In this paper, the fundamental formula was deduced on the basis of surface potential of two grounding electrodes. Which corresponds to source of the potential interference and other grounding electrode, respectively. Therefore, the degree of potential interference in this mesh grounding electrode system was verified by the simple model simulation. In addition, in order to identify the difference between the grounding resistance in the realistic construction site and the expected value from the corresponding simulation, the experiment was performed with model on a reduced scale about the realistic grounding system. It consists of stainless steel hemisphere electrodes in a water tank. From this work, the grounding resistance in the mesh grounding electrode showed the good coincidence results between those. Consequently, it is confirmed that the grounding resistance in the mesh electrode is possible to be estimated by performing the experiment using the water tank model.

• Journal of the Korean Magnetics Society
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• v.24 no.3
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• pp.76-80
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• 2014

Toroidal cores made of metallic powder requires large magnetic field strength up to few decade kA/m to obtain major hysteresis loop. To overcome thermal heat generation problem from large exciting current during measurement, we have employed a real time hysteresis loop tracer which can digitize and calculate B-H signals in personal computer as real time. For example, when we magnetize specimen at 10 Hz frequency, we could display hysteresis loops 10 times per second. Using the real time hysteresis loop tracer, we could measure major hysteresis loop of toroidal shape metallic powder core at maximum flux density or maximum magnetic field strength to be measured within 5 second not to significant increasement of specimen temperature due to the heat dissipation from coil windings. For the constructed hysteresis loop tracer, we could measure hysteresis loop at magnetic field strength higher than 50 kA/m for the toroidal shape specimen.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.159-159
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• 1999

니켈 산화물 박막을 전자비임 증착법으로 기판온도는 RT~25$0^{\circ}C$의 범위에서 제작하였다. 제작시 초기 베이스 압력은 2$\times$10-6mbar로 하고 산소주입후 작업진공도를 3$\times$10-4mbar로 유지하여 증착하였다. 제작시 기판온도에 따라 제작된 시료들은 각각 X선회절장치(XRD)로 막의 구조과 그림과 같이 입방체 구조 또는 팔면체구조를 갖음을 알 수 있었으며 막의 표면형상은 SEM을 이용하여 분석하였다. 각각의 여러 기판온도에 따라 제작된 니켈 산화물 박막의 전기 화학적인 특성을 분석하기 위해 순환전압전류법을 이용하였다. 또한, 전기적인 광학소자로써의 특성을 분석하기 위해 UV-Vis 광분광기를 사용하여 투과율을 측정하여 그 특성을 알아보았다. 순환전압전류법에 의한 각 시료에 대한 박막의 전기화학적 특성은 0.5M KOH 전해질 수용액에서 기판온도가 150~20$0^{\circ}C$로 제작된 니켈 산화물 박막이 다른 온도에서 제작된 시료들보다 높은 전기화학적 안정성을 보임을 알 수 있었다. 마찬가지로 광학적 특성에서 착색과 탈색의 순환과정시 분광광도계에서 나타나는 광투과율을 비교해 보면 100~20$0^{\circ}C$에서 제작된 니켈 산화물 박막이 가역적인 착탈색의 색변화가 현저하게 나타남을 알 수 있었다. 결과적으로 광학적 특성 및 전기화학적 안정성 분석으로 인해 막의수명과 전기적착색 물질의 특성면에서 증착시 기판온도가 150~20$0^{\circ}C$에서 제작된 시료가 가장 내구성면에서 막의 이온 누적이 적고 활성적인 광투과율의 성질을 갖는다는 것이다. 이와같이 니켈산화물 박막제작시 기판온도가 전기적착색물질의 특성과 내구성에 큰 영향을 미침을 분석할 수 있었다.electron Microscopy)과 AFM(Atomim Force microscopy)으로 증착박 표면의 topology와 roughness를 관찰하였다. grain의 크기는 10nm에서 150nm이었고 증착막의 roughness는 4.2nm이었다. 그리고 이 산화막에 전극을 형성하여 유전 상수와 손실률 등을 측정하였다. 이와 같이 plasma를 이용한 3-beam에 의한 증착은 금속의 산화막을 얻는데 유용한 기술로 광학 재료 및 유전 재료의 개발 및 연구에 많이 사용될 것으로 기대된다.소분압 조건에서 RuO2의 형성을 관찰하였으며, 이것은 열역학적인 계산을 통해서 잘 설명할 수 있었다.0$\mu\textrm{m}$, 코일간의 간격은 100$\mu\textrm{m}$였다. 제조된 박막 인덕터는 5MHz에서 1.0$\mu$H의 인덕턴스를 나타내었으며 dc current dervability는 100mA까지 유지되었다. CeO2 박막과 Si 사이의 결함때문이라고 사료된다.phology 관찰결과 Ge 함량이 높은 박막의 입계가 다결정 Si의 입계에 비해 훨씬 큰 것으로 나타났으며 근 값도 증가하는 것으로 나타났다. 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적