• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.155-159
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• 2005

In this report, Polymer light emitting diodes (PLEDs) with an ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared by spin coating method on the glass substrate patterned ITO (indium tin oxide), using PEDOT:PSS(poly(3,4=ethylenedioxythiophene):poly(styrene sulfolnate)) as the hole transfer material and MEH-PPV(poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenvinylene)) having a different concentration (0.1, 0.3, 0.5, 0.7, 0.9, 1.5 wt$\%$) as the emitting material. The electrical and optical properties of the prepared PLED samples were investigated. The good electrical and optical properties were observed for the PLED samples with a MEH-PPV concentration ranging from 0.5 to $0.9 wt\%$. However, the current and luminance values for PLED sample with $1.5 wt\%$ of MEH-PPV decreased greatly. The maximum luminance and light efficiency for the PLEDs with concentration of $0.5 wt\%$ MEH-PPV were $409 cd/m^2$ and 4.90 Im/W at 9 V, respectively. The emission spectrums were found to be $560{\~}585 nm$ in wavelength showing orange color.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.47-52
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• 2006

This paper proposes a novel low-power $32bit\times32bit$ multiplier for deep submicron technologies beyond 130nm. As technology becomes small, static power due to leakage current significantly increases, and it becomes comparable to dynamic power. Recently, shutdown method based on MTCMOS is widely used to reduce both dynamic and static power. However, it suffers from severe power line noise when restoring whole large-size functional block. Therefore, the proposed multiplier mitigates this noise by shutting down and waking up sequentially along with pipeline stage. Fabricated chip measurement results in $0.35{\mu}m$ technology and gate-transition-level simulation results in 130nm and 90nm technologies show that it consumes $66{\mu}W,\;13{\mu}W,\;and\;6{\mu}W$ in idle mode, respectively, and it reduces power consumption to $0.04%\sim0.08%$ of active mode. As technology becomes small, power reduction efficiency degrades in the conventional clock gating scheme, but the proposed multiplier does not.

• Journal of the Korean Electrochemical Society
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• v.19 no.2
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• pp.39-44
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• 2016

Oxygen reduction reaction in the fuel cell (ORR) plays a dominant role in the overall reaction. In addition, the low compatibility between the membrane and the binder consisted of different materials, greatly reduces the efficiency of the fuel cell performance. In view of these two problems, geometrically modified copolymers with 9.9_Bis (4-hydroxyphenyl) were synthesized via condensation reaction instead of conventional biphenol and were adopted as hydrocarbon ionomer binders. By utilizing these binders, two kinds of MEAs using fluorinated Nafion membrane and hydrocarbon based membrane were manufactured in order to electrochemical performance evaluation. With current-voltage curves, there was no significant difference in the 0.6 V when two types of membrane were applied. Also, tafel slope became considerably lower as compared to the Nafion membrane. Thus, it is determined that the new hydrocarbon binder is expected to contribute the improvement in performance of fuel cells.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.9
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• pp.799-804
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• 2016

Broadband powerline communication (BPLC) uses distribution lines as a medium for achieving effective bidirectional data communication along with electric current flow. As the material characteristics of power lines are not good at the communication channel, the development of power line communication (PLC) systems for internet, voice, and data services requires measurement-based models of the transfer characteristics of the network suitable for performance analysis by simulation. In this paper, an analytic model describing a complex transfer function is presented to obtain the attenuation and path parameters for a multipath power line model. The calculated results demonstrated frequency-selective fading in multipath channels and signal attenuation with frequency, and were in good agreement with the experimental results. Inductive coupling units are used as couplers for coupling the signal to the power line to avoid physical connections to the distribution line. The inductance of the ferrite core, which depends on the frequency, determines the cut-off frequency of the inductive coupler. Coupling loss can be minimized by increasing the number of windings around the coupler. Coupling efficiency was improved by more than 6 dB with three windings compared to the results obtained with one winding.

• Journal of the Korean Solar Energy Society
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• v.30 no.6
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• pp.73-80
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• 2010

This study was conducted to estimate the relative performance of modules with changed characteristics due to long term exposure to the outdoor environment, with a specially made test device for simultaneous measurement of real time power output from the photovoltaic array, taking into account the inclined panel, direct irradiation, power being generated, temperature as well as the optimal analysis timing. In terminology description, M is an abbreviation of module and Group A, Group B are 10 modules series connection (1~10 of M), (11~20 of M) for each of them respectively. The overall mean voltage difference of M-18 with the lowest power output and M-14 with the highest output is-2.13V and it was identifiable that voltage difference was more concentrated to Group B. In addition, in case of M-2 and M-7, M-8, when compared with M-14, the overall mean voltage difference was -0.92V, -1.56 and -0.91V respectively showing the more concentration to Group A. When the temperature of module went up by $1^{\circ}C$, the mean voltage was reduced by 0.35V. For current, Group A was lower than Group B by-0.022A and the ratio of each group was 49.68% and 50.32% respectively, presumably the module with deteriorated properties were more concentrated to Group A relatively. From the comparison of relations with the comprehensive accumulation, M-2, M-7, M-8, M-16 and M-18 were those with deterioration of performance to the worst, thereby requiring precision examination. In comparative efficiency, M-14 was the most excellent one as 12.19% while M-18 as 10.53% was identified that its efficiency was comparatively rapidly reduced.

• Journal of IKEEE
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• v.21 no.4
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• pp.368-374
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• 2017

In this Paper, we developed a low power type LED security light using LED lighting that substitutes a 220[V] commercial power source for a solar cell module instead of a halogen or a sodium lamp. in addition, a PWM type drive control circuit is designed to minimize the heat generation problem and the drive current of the LED drive controller. in developed system, The light efficiency measurement value is 93.6[lm/W], and a high precision temperature sensor is used inside the controller to control the heat generation of the LED lamp. In order to eliminate the high heat generated from the LED lamp, it is designed to disperse quickly into the atmosphere through the metal insertion type heat sink. The heat control range of LED lighting was $50-55[^{\circ}C]$. The luminous flux and the lighting speed of the LED security lamp were 0.5[s], and the beam diffusion angle of the LED lamp was about $110[^{\circ}C]$ by the light distribution curve based on the height of 6[m].

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.216-220
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• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.219-224
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• 2012

We study for long-term performance of amorphous silicon solar cells under light exposure. The performance is predicted with a kinetic model in which the carrier lifetimes are determined by the defect density. In particular, the kinetic model is described by the stretched-exponential relaxation of defects to reach equilibrium. In this report, we simulate the light-induced degradation of the amorphous silicon solar cells with the kinetic model and AMPS-1D computer program. And data measured for outdoor performances of various solar cells are compared with the simulated results. This study focuses on examining the light-induced degradation for the following amorphous silicon pin solar cells: thickness${\approx}$300 nm, built-in potential${\approx}$1.05 V, defect density (at t=0)${\approx}5{\times}10^{15}cm^{-3}$, short-circuit current density (at t=0)${\approx}15.8mA/cm^2$, fill factor (at t=0)${\approx}0.691$, open-circuit voltage (at t=0)${\approx}0.865V$, conversion efficiency (at t=0)${\approx}9.50%$.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.77-85
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• 2011

The silicon-germanium (SiGe) alloy, which is compatible with silicon semiconductor technology and has a smaller band gap and a lower thermal conductivity than silicon, has been used to fabricate electronic devices such as transistors, photodetectors, solar cells, and thermoelectric devices. This paper reviews the application of SiGe alloys to electronic devices and related technical issues. Since the SiGe alloy comprises germanium whose band gap is smaller than silicon, its band gap is also smaller than that of silicon irrespective of the ratio of silicon to germanium. This narrow band gap of SiGe enables the base thickness of bipolar transistors to decrease without a loss in current gain so that it is possible to improve the speed of bipolar transistors by adopting the SiGe-base. In addition, the conversion efficiency of solar cells is enhanced by the absorption of long-wavelength light in the SiGe absorption layer. Phonon scattering caused by the irregular distribution of alloying elements induces the lower thermal conductivity of SiGe than those of pure silicon and germanium. Because a thin film layer with a low thermal conductivity suppresses thermal conduction through a thermal sink, the SiGe alloy is considered to be a promising material for silicon-based thermoelectric systems.