• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.5
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• pp.22-33
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• 2021

In the case of open phase faults caused by the disconnection of distribution feeders interconnected to a PV system, many problems can occur depending on the core type and wiring method of the grid-connected transformers. Moreover, open phase faults are difficult to detect because the open phase voltage of the existing protection relay (Open Phase Relay (47)) can be maintained, even though a disconnection fault occurred, depending on the wiring method and the iron core type of the grid-connected transformer for a PV system. Therefore, this paper proposes a novel algorithm to detect open phase faults by comparing the currents and phases between the primary and secondary sides of a grid-connected transformer. In addition, this paper presents the modeling of a distribution system and protection devices for detecting open phase faults using PSCAD/EMTDC S/W, and implements a test protection device for detecting open phase faults based on the above-mentioned modeling. The simulation and test results confirmed that the proposed algorithm is useful for detecting open phase faults according to the wiring method and iron core type of grid-connected transformer for a PV system because operation slope and unbalance rate of the primary current exceed the setting value (30[%]) of the protection device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.255-260
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• 2023

As demanding the detection of explosive molecules, it is required to develop rapidly and precisely responsive sensors with ultra-high sensitivity. Since two-dimensional semiconductors have an atomically thin body nature where mobile carriers accumulate, the abrupt modulation carrier in the thin body channel can be expected. To investigate the effectiveness of WSe₂ semiconductor materials as a detection material for TNT (Trinitrotoluene) explosives, WSe₂ was synthesized using thermal chemical vapor deposition, and afterward, WSe₂ FETs (Field Effect Transistors) were fabricated using standard photo-lithograph processes. Raman Spectrum and FT-IR (Fourier-transform infrared) spectroscopy reveal that the adsorption of TNT molecules induces the structural transition of WSe₂ crystalline. The electrical properties before and after adsorption of TNT molecules on the WSe₂ surface were compared; as -50 V was applied as the back gate bias, 0.02 μA was recorded in the bare state, and the drain current increased to 0.41 μA with a dropping 0.6% (w/v) TNT while maintaining the p-type behavior. Afterward, the electrical characteristics were additionally evaluated by comparing the carrier mobility, hysteresis, and on/off ratio. Consequently, the present report provides the milestone for developing ultra-sensitive sensors with rapid response and high precision.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.57-58
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• 2011

III-V족 화합물 반도체의 일종인 InSb는 77 K에서 0.23 eV의 작은 밴드 갭을 가지며 높은 전하 이동도를 가지고 있기 때문에 대기권에서 전자파 흡수가 일어나지 않는 3~5 ${\mu}m$범위의 장파장 적외선 감지가 가능하여 중적외선 감지 소자로 이용되고 있다. 하지만 InSb는 밴드 갭이 매우 작기 때문에, 소자 제작시 누설전류에 의한 소자 특성의 저하가 문제시 되고 있다. 또한 다른 화합물 반도체에 비해 녹는점이 낮고, 휘발성이 강한 5족 원소인 Sb의 승화로 기판의 화학양론적 조성비(stoichiometry)가 변하기 쉬워, 계면특성 저하의 원인이 된다. 따라서 우수한 특성을 가지는 적외선 소자의 구현을 위해서, 저온에서 계면 특성이 우수한 고품질의 절연막 증착 연구가 필수적이다. 본 연구에서는 InSb 기판 위에 $SiO_2$, $Si_3N_4$의 절연막 형성시 증착온도의 변화에 따른 계면 트랩 밀도를 분석하였다. $SiO_2$, $Si_3N_4$ 절연막은 플라즈마 화학 기상 증착법(PECVD)을 이용하여 n형 InSb 기판 위에 증착하였으며, 증착온도를 $120^{\circ}C$부터 $240^{\circ}C$까지 변화시켰다. Metal oxide semiconductor(MOS) 구조 제작을 통하여, 커패시턴스-전압(C-V)분석을 진행하였으며, 절연막과 InSb 사이의 계면 트랩 밀도를 Terman method를 이용하여 계산하였다[1]. 또한, $SiO_2$와 $Si_3N_4$의 XPS 분석과 TOF-SIMS 분석을 통하여 계면 트랩 밀도의 원인을 밝혀 보았다. $120{\sim}240^{\circ}C$ 온도 범위에서 계면 트랩 밀도는 $Si_3N_4$의 경우 $2.4{\sim}4.9{\times}10^{12}cm^{-2}eV^{-1}$, $SiO_2$의 경우 $7.1{\sim}7.3{\times}10^{11}cm^{-2}eV^{-1}$ 값을 나타냈고, 두 절연막 모두 증착 온도가 증가할수록 계면 트랩 밀도가 증가하는 경향을 보였다. 그러나 모든 샘플에서 $Si_3N_4$의 경우, flat band voltage가 음의 전압으로 이동한 반면, $SiO_2$의 경우, 양의 전압으로 이동하는 것을 확인할 수 있었다. 계면 트랩 밀도 증가의 원인을 확인하기 위해서, oxide를 $120^{\circ}C$, $240^{\circ}C$에서 증착시킨 샘플을 XPS 분석을 통하여 깊이에 따른 성분분석을 하였고, 그 결과, $240^{\circ}C$에서 증착된 샘플에서 계면에서 $In_2O_3$와 $Sb_2O_3$ 피크의 증가를 확인하였다. 이는 계면에서 oxide양이 증가함을 의미하며, 이렇게 생성된 oxide는 계면 트랩으로 작용하므로, 계면 특성을 저하시키는 원인으로 작용함을 알 수 있었다. Nitride 절연막을 증착시킨 샘플은 TOF-SIMS 분석을 통해, 계면에서의 성분 분석을 하였고, 그 결과, $240^{\circ}C$에서 증착된 샘플에서 In-N, Sb-N, Si-N 결합의 감소를 확인하였다. 이렇게 분해된 결합들의 dangling 결합이 늘어 계면 트랩으로 작용하므로, 계면 특성을 저하시키는 원인으로 작용함을 알 수 있었다. 최종적으로, 소자특성을 확인 하기 위하여 계면 트랩 밀도가 가장 낮게 측정된 $200^{\circ}C$ 조건에서 $SiO_2$ 절연막을 증착하여 InSb 적외선 소자를 제작하였다. 전류-전압(I-V) 분석 결과 -0.1 V에서 16 nA의 누설 전류 값을 보였으며, $2.6{\times}10^3{\Omega}cm^2$의 RoA(zero bias resistance area)를 얻을 수 있었다. 절연막 증착조건의 최적화를 통하여, InSb 적외선 소자의 특성이 개선됨을 확인할 수 있었다.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.174-179
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• 2008

The measurement dissolution sensor system using GMR-SV device with magnetic sensitivity of 0.8 %/Oe and Mg-film thick of 200 nm and Mg-foil thick of 50 mm was fabricated and characterized. During the water dissolving process of Mg-film and Mg-foil, the subtle variation of magnetic field by the decrease of current in solenoid was detected by the GMR-SV sensor. The variations of Mg bubble number and ORP as a function of time for three different kinds of edible, tap, and distilled water, are measured and compared. A After 45 min, the speed of fast dissolving Mg was shown the order of edible > tap > DI water. The variation of output magnetoresistance as a function of dissolved time of Mg-film and Mg-foil for edible water, which is composed of mineral content of $0.8{\sim}5.4\;mg/l$ was investigated. The response times for the dissolution in edible water were 5 min and 20 min, respectively. From the measurement of dissolving time and speed for Mg-film and Mg-foil using GMR-SV device, the mineral Mg sensor system in edible water can be possible to develop.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.10
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• pp.1-11
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• 1998

This paper presents a new implementation method of the pulsed NMR(nuclear magnetic resonance) apparatus, which contains a single coil in a magnet console, to detect a NMR signal. Applying an RF magnetic field of 5MHz to the magnet console which is designed to have Larmor frequency of 5MHz for hydrogen atom, the hydrogen NMR signal was obtained from the glycerin which was put in the magnet console as a sample. The DC magnetic field in the magnet console was implemented with a permanent magnet of 1168 gauss and the RF magnetic field was generated appling an RF signal with the frequency of 5MHz and the current magnitude of 8A to a coil of 5.73${\mu}$H. The magnitude of the NMR signal was maximum when the RF magnetic field was generated for 2.8 ${\mu}$sec, and the period of generating the RF magnetic field was designed to 100msec for detecting the NMR signal repeatedly. The NMR signal, radiated from the sample in the magnetic console, was appeared as an amplitude-modulated signal with a frequency equal to the Larmor frequency. The signal, induced in the coil, was amplified in the tx/rx separation circuit, preamplifier and intermediate amplifier by a factor of 20.7dB, 36dB and 40dB, respectively, and the signal was detected by a synchronous detection circuits, then the NMR signal was obtained.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.119-119
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• 2009

인버터 DC 저항용접의 적용성 증대 : 인버터 DC 저항용접 공법이 SPOT, PROJECTON, SEAM, BUTT 등의 공정에 다양하게 적용되어 저항용접 현장에서 고효율, 친환경적 용접 환경을 만드는데 일조 하고 있다. 특히 자동차의 경량화, 충돌내성 증대, 진동 및 내구성 증대, 공간활용 극대화, 새로운 Design 개념 적용 등의 산업전반에 걸쳐 나타나는 신 Trends로 고 장력 철재의 적용 범위가 확대되고 HSS(High Strength Steel), EHSS(Extra High Strength Steel), UHSS (Ultra High strength Steel ; Hot - Formed Steel )등 다양한 철판의 SPOT 저항용접이 필요하게 되었다. 기존의 AC 단상용접의 전력 특성 상 통전 중 무 통전 시간 과 높은 PEAK 전력, 단상 대 전력 소모로 인한 전력 DROP 등의 문제로 인하여 신소재의 용접 시 매우 많은 Spatter가 발생하고, 높은 용접품질의 확보가 어려워 지므로 이를 대체하기 위한 공법으로 MFDC ( 인버터 DC 저항용접공법 )이 적용되고 있다. 인버터 DC 저항용접의 적응제어 : MFDC라는 높은 효율의 용접 전력원이 확보 됨에도 불구하고 용접현장에서는 원 자재, 도금 등의 품질 산포, 프레스 물의 가공산포, 공기압 산포, 전극 과열 및 마모 등의 요인에 의하여 저항용접 산포가 발생하고 있다. 이는 인위적인 조작이 어렵고 불규칙적이며, 어디서나 산재하고 있는 문제이다. 이를 용접전력 제어 법으로 개선하여 일정한 용접성을 확보하기 위한 노력이 적응제어 기법이다. 정 전류, 정 전력 제어는 정량 제어로 용접 물을 비롯한 용접부의 변화와는 관계없이 설정된 일정량의 전력을 공급하기만 하는데 반하여 적응제어는 적절한 용접 작업 시의 용접 물의 상태, 전극의 가압, 표면 상태 등에 따른 변화 페턴을 기억하고 이후 진행되는 용접에 대하여 정상 페턴과의 차이를 감지 이를 보상하므로 고품질의 용접성을 보장하는 제어기법이다. 따라서 다양한 용접 산포 유발 요인에 의해 용접부의 변화가 발생한다 하여도 그 변화를 감지 하고 적절한 용접전력을 공급한다면 고품질의 용접성을 확보하는데 유용한 공법이 될 수 있다. 인버터 DC 저항용접의 SPC 관리 : SPOT 용접 시 획득할 수 있는 다양한 파라메터에 대하여 모니터링 하고 이 자료를 data 화 하여 품질 관리에 응용하게 되면 양산라인에서 반복적으로 발생되는 문제점을 확인 할 수 있고 이를 통계적 방법으로 추적 개선해 나간다면 용접 불량 감소 및 생산성 향상에 도움이 되며 작업자의 공정 능력 향상 및 기업의 기술축적에도 높은 기여를 할 수 있을 것이다. 용접 적응제어와 다양한 파라메터 모니터링이 한 system에서 이루어 질 때 높은 용접성 확보와 불량률 감소, 원가절감, 생산성 향상 등의 효과가 극대화 될 것이다.

• Journal of Astronomy and Space Sciences
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• v.25 no.4
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• pp.435-444
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• 2008

High energy charged particles are trapped by geomagnetic field in the region named Van Allen Belt. These particles can move to low altitude along magnetic field and threaten even low altitude spacecraft. Space Radiation can cause equipment failures and on occasions can even destroy operations of satellites in orbit. Sun sensors aboard Science and Technology Satellite (STSAT-l) was designed to detect sun light with silicon solar cells which performance was degraded during satellite operation. In this study, we try to identify which particle contribute to the solar cell degradation with ground based radiation facilities. We measured the short circuit current after bombarding electrons and protons on the solar cells same as STSAT-1 sun sensors. Also we estimated particle flux on the STSAT-l orbit with analyzing NOAA POES particle data. Our result clearly shows STSAT-l solar cell degradation was caused by energetic protons which energy is about 700keV to 1.5MeV. Our result can be applied to estimate solar cell conditions of other satellites.

• Korean Chemical Engineering Research
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• v.48 no.1
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• pp.33-38
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• 2010

A microfluidic system has been developed using biomaterial for the measurement of cupric ion concentration. The cell-membrane-mimicking bilayer lipid membrane(BLM)-coated silver electrode was used for the sensing of cupric ion concentration. The silver-supported BLM could increase its stability. A silver-supported bilayer lipid membrane(s-BLM) was easily obtained using its self-assembling characteristics by immersing silver wire into lipid(phosphatidylcholine; PC) solution and then dipping into aqueous KCl solution. These s-BLMs were used to determine the relationship between $Cu^{2+}$ concentration and current crossing s-BLM. Their relationship showed high linearity and reproducibility. The calibration curve was constructed to express the relationship between $Cu^{2+}$ concentration and current in the $Cu^{2+}$ concentration range of 10 and $130{\mu}M$. This calibration curve was used to measure $Cu^{2+}$ concentration in an unknown sample. Microfluidic system with s-BLM was made of PDMS(polydimethyl siloxane) using typical soft photolithography and molding technique. This integrated system has various functions such as activation of the silver surface without cutting silver wire, coating of BLM on silver surface, injection of KCl buffer solution, injection of $Cu^{2+}$ sample and measurement of $Cu^{2+}$ concentration in the sample.

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.161-167
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• 2017

We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.7-17
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• 2010

In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlines. They are accessed by totally new read and write method which results in low operating power dissipation in the nature. Moreover, the design reduces the leakage current in the memory cells. The proposed SRAM has been demonstrated through 16-kbit test chip fabricated in a 0.18-${\mu}m$ CMOS process. It shows 17.5 ns access at 1.8-V supply while consuming dynamic power of $87.6\;{\mu}W/MHz$ (for read cycle) and $70.2\;{\mu}W/MHz$ (for write cycle). Compared with those of the conventional 6-transistor SRAM, it exhibits the power reduction of 30 % (read) and 42 % (write) respectively. Silicon measurement also confirms that the proposed SRAM achieves nearly 64 % reduction in the total standby power dissipation. This novel SRAM might be effective in realizing low-power embedded memory in future mobile applications.