• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.394-402
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• 2013

This paper presents design, fabrication and ruggedness test of switching-mode power amplifier using GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) for S-band radar applications. The power amplifier is designed to Class-F for high efficiency. The input signal for the measurement of the power amplifier is pulse signal at $100{\mu}s$ pulse width and duty cycle of 10 %. The measurement results of the fabricated Class-F power amplifier are a power gain of 10.8 dB, an output power of 40.8 dBm, a power added efficiency(PAE) of 54.2 %, and a drain efficiency of 62.6 %, at the center frequency. We proposed reliability test set-up of a power amplifier for ruggedness test. And we measured output power and efficiency according to VSWR(Voltage Standing Wave Ratio) variation. The designed power amplifier achieved output power of 32.6~41.1 dBm and drain efficiency of 23.4~63 % by changing VSWR, respectively.

• Journal of Advanced Navigation Technology
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• v.23 no.2
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• pp.166-171
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• 2019

This paper has designed a current mode class D power amplifier to increase the transmission efficiency of a 6.78 MHz wireless power transfer (WPT) transmitter and to ensure stable characteristics even when the transmitting and receiving coil intervals change. By reducing the loss due to the parasitic capacitor component of the transistor, which limits the theoretical efficiency of the linear amplifier, this research has improved the efficiency of the power amplifier. The circuit design simulator was used to design the high efficiency amplifier, and the power output and efficiency characteristics according to the load impedance change have been simulated and verified. In the simulation, 42.1 dBm output and 95% efficiency was designed at DC bias 30 V. The power amplifier was fabricated and showed 91% efficiency at the output of 42.1 dBm (16 W). The transmitting and receiving coils were fabricated for wireless power transfer of the drone, and the maximum power added efficiency was 88% and the output power was $42.1dBm{\pm}1.7dB$ according to the load change causing from the coil intervals.

• Journal of Advanced Navigation Technology
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• v.13 no.3
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• pp.358-364
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• 2009

This paper shows some variable bias techniques which can improve the power added efficiency(PAE) for the designed power amplifier. Some simulations have been done to get the effect of the bias change, and variable bias is adopted to get the higher efficiency for dual mode amplifier which generates two different output power levels. With drain bias change and a fixed gate bias, the amplifier shows PAE improvement compared to the fixed bias amplifier. In addition, this paper analyzed nonlinear distortion of the power amplifier and has used the digital predistortion which can result in 10dB ACPR improvement for the dual band amplifier.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.7A
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• pp.557-567
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• 2005

We evaluate the BER performance of OFDMA system for Wibro services in frequency selective Rayleigh fading channel, considering the carrier frequency offset and the nonlinear high power amplifier. In the uplink OFDMA, nonlinear amplifier and frequency offset introduce larger BER degradation than in the downlink. We explain the reason and obtain the required output back-off of the nonlinear amplifier and value of frequency offset for good BER performance.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.05a
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• pp.383-388
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• 1998

이동통신에서, 신호의 페이딩을 보상하기 위하여 pilot symbol assisted modulation(PSAM)에 대한 많은 연구가 진행 되어왔다. 본 논문에서는 최대비합성다이버시티를 사용하는 PSA-QAM에서 전력증폭기 비선형성의 효과를 분석하였다. 먼저, PSAM성능의 한계를 구하기 위하여, 페이딩에 대한 완벽한 정보가 주어진 상태에서 최대비합성다이버시티를 갖는 QAM의 이론적 성능을 분석하였다. 실제 PSAM에서, 페이딩에 대한 정보는 파일럿 심볼의 보간에 의하여 얻어진다. 오차의 평균전력을 최소화하는 보간필터를 사용하여 필터의 탭수, 파일럿 심볼프레임 주기, 도플러 주파수가 성능에 미치는 영향을 분석하였다. 비선형 전력증폭기 AB, B, C급의 AM/AM, AM/PM 특성을 성능분석에 고려하였다. 비선형 보상기술인 Cartesian Feedback Loop (CFB) 이용하여 AWGN 채널과 Rayleigh 페이딩 채널에서 비선형 전력증폭기 종류에 따른 성능변화를 나타내었다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.9
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• pp.44-50
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• 2002

Recently, a envelope tracking(ET) amplifier that improves efficiency by changing of the bias according to the RF input level is presented to use for a high power amplifier of cellular radio handset using CDMA. The input and the output impedances of the ET amplifier may be varied by changing of the bias of the amplifier, and it makes the amplifier having low gain, low efficiency, and high input and output VSWR. In order to improve the input and the output mismatch of the amplifier, in this paper, two types of ET amplifier are suggested. In case of an ET amplifier using varactor diode, in experimentation, gain is improved about 7dB and the power consumption of the amplifier is better about 60% than that of the conventional amplifier. In case of a base voltage controlled ET amplifier, the gain and power consumption of the amplifier is improved about 9dB and 40% than those of the conventional amplifier, respectively.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.2
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• pp.75-82
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• 2009

This paper proposes a method which increases the linearity using an improvement mechanism of Doherty power amplifier and compensates the decrement of efficiency due to improvement of linearity. To verify the method, a 20W power amplifier is designed and implemented. Compared with 2-way Doherty power amplifier, the implemented 3-way Doherty power amplifier with class F shows improved linearity about 10dBc and efficiency about 1.5%. Also, efficiency characteristic has been improved about 3.5% compared with the 2-way Doherty power amplifier while maintaining linearity. This results show that the proposed 3-way Doherty power amplifier with class F is shown to be adequate for improvement of efficiency and linearity. It is expected that the proposed amplifier can be used for various wireless communication system amplifiers.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.2
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• pp.85-89
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• 2011

In this paper, a novel Class-E power amplifier using metamaterials has been realized with one RF LDMOS diffusion metal-oxide-semiconductor field effect transistor. The CRLH structure can lead to metamaterial transmission line with the Class-E power amplifier tuning capability. The CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Also, the proposed power amplifier has been realized by using the CRLH structure in the output matching network for better efficiency. Operating frequencies are chosen at 13.56 MHz in this work. The measured results show that the output power of 39.83 dBm and the gain of 11.83dB was obtained. At this point, we have obtained the power-added efficiency (PAE) of 73 % at operation frequency.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.1
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• pp.92-96
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• 2011

In this paper, we present a bandpass filter (BPF) based on composite right-/left-handed (CRLH) structure for improving the linearity of the power amplifier. The proposed BPF consist of the inter-digit signal line on the top plane and the complementary split ring resonator (CSRR) on the bottom plane, respectively. The insertion loss is minimized at operation frequency and the 2nd harmonic is suppressed by the bandpass filter using the CRLH structure, respectively. The output power of 33 dBm, the 2nd harmonic of -53.527 dBc, 3rd inter-modulation distortion of -36.16 dBc was obtained at 2.14 GHz, respectively. Compared with the reference power amplifier, the 2nd harmonic of 16 dB and 3rd inter-modulation distortion of 12 dB have been improved at 2.14 GHz, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.9
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• pp.54-58
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• 2011

In this paper a dual-band Class-E power amplifier using Composite Right-/Left-Handed transmission lines and PIN diode is proposed. Dual-band operation is achieved by the frequency offset and nonlinear phase slope of CRLH TL for the matching network of power amplifiers. The proposed power amplifier has been realized by using in the input and the output matching network for high power added efficiency. PIN diode has been used to obtain the dual-band of power amplifier. The measured results show that output powers of 42.17 dBm and 41.43 dBm were obtained at 800 MHz and 1900 MHz, respectively. At this frequency, we have obtained the power-added efficiency(PAE) of 67.84 % and 65.31 % in two operation frequencies, respectively.