• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1079-1086
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• 2012

In this paper, X-band 60 W Solid-State Power Amplifier with sequential control circuit and pulse width variation circuit for improve bias of SSPA module was designed. The sequential control circuit operate in regular sequence drain bias switching of GaAs FET. The distortion and efficiency of output signals due to SSPA nonlinear degradation is increased by making operate in regular sequence the drain bias wider than that of RF input signals pulse width if only input signal using pulsed width variation. The GaAs FETs are used for the 60 W SSPA module which is consists of 3-stage modules, pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main power amplifier stage is implemented with the power combiner, as a balanced amplifier structure, to obtain the power greater than 60 W. The designed SSPA modules has 50 dB gain, pulse period 1 msec, pulse width 100 us, 10 % duty cycle and 60 watts output power in the frequency range of 9.2~9.6 GHz and it can be applied to solid-state pulse compression radar using pulse SSPA.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.342-345
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• 2003

본 논문에서는 90W/sub avg/급 디지털 TV 중계기에 사용되는 140W/sub avg/급 전력증폭기를 설계 및 구현하였다. 중계기 규격의 기반이 되는 미국 FCC(Federal Communications Commission) 의 규격과 KBS(한국방송공사)가 제시하는 사양에 적합한 전력증폭기의 설계 및 구현을 목표로 하였다. 전력증폭기는 4단으로 구성하였으며, 전치증폭기는 A 급, 구동증폭기와 종단증폭기는 AB 급으로 동작시켰다. 구동증폭기에서는 3W/sub avg/의 출력을 얻었으며, 3 개의 전력증폭용 모듈이 병렬 연결된 종단증폭기에서는 140W/sub avg/ 의 출력을 얻을 수 있었다. 사용주파수의 대역을 넓히고 입력 및 출력의 VSWR 을 개선시키기 위하여 발룬과 sage wireline coupler 를 이용하여 전력증폭용 모듈을 설계하였다. 모든 전력증폭용 모듈은 방송용 전력증폭기의 규격사양인 isolator 로 종단 처리하여, 종단 임피던스의 갑작스런 변화시에도 장비가 보호될 수 있도록 설계하였다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.3
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• pp.29-34
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• 2021

For the purpose of Application to the small radar sensor, the MMIC Chips, which are the core component of the W-band, was designed in Korea according to the characteristics of the transceiver and manufactured by 60nm GaN and 0.1㎛ GaAs pHEMT process. The output power of PA is 28 dBm at center frequency of W-band and Noise figure is 6.7 dB of switch and LNA MMIC. Output power and Noise figure of MMIC chips developed in domestic was applied to the transmitter and receiver module through W-band waveguide low loss transition structure design and impedance matching to verify the performance after the fabrication are 26.1~27.7 dBm and 7.85~10.57 dB including thermal testing, and which are close to the analysis result. As a result, these are judged that the PA and Switch and LNA MMICs can be applied to the small radar sensor.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.11
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• pp.1311-1316
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• 2014

To be used in a transmitter of a satellite transponder of this paper, X band 25W power amplifier module, a part constituting of high-power amplifier is transmitted to the equipment for transmitting to geostationary communications satellites(36,000Km distance). PAM consisted a total of four power amplifier module has a high output characteristic of the high-output amplifier is used in the ground station. Used in conjunction with the structured type power amplifier module is composed of Serial Combining Structure. This PAM(Power Amplifier Module) configured by combining the circuit with the power amplifier, 10 MMIC chips and the Al2O3 thin film substrate using a Hybrid Technique of power amplifier module, was implemented at X band PAM(Power Amplifier Module) of 25W grade.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.5
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• pp.1193-1200
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• 2008

This paper describes a developed 5Watt power amplifier module fer mobile communication system using Gallium Nitride (GaN) devices. Three amplification stages such as pre-amplifier, driver amplifier, and power amplifier have been fabricated and measured separately in advance for incorporating the total power amplifier module and estimating the performances. In addition, a defected ground structure is combined with the output stage of the power amplifier module for improving harmonic rejection and adjacent channel power (ACP) characteristics. The measured performances of the GaN power amplifier module include 58dB,min of gain, 37dBm,min of output power, 50dBc,min of harmonic rejection, 35dBc,min of IMD3 for 2-tone input, and 35dBc,min of ACP at 2.1GHz frequency band.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.12A
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• pp.1932-1938
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• 1999

In this paper, planar duplexer module combined with power amplifier is described. This new scheme is to enhance power efficiency as well as to minimize the size of RF circuit in CDMA phone. Each filter which was a part of duplexer, was realized with planar type and rearranged into the power amplifier module on the multilayer board. Each electrical specifications of existing power amplifier and duplexer were satisfied. Especially, ACPR performances measured at output power of 24dBm which is 2dB lower than that of a conventional one, meet IS-95 for a power amplifier of CDMA phone. Overall current about 80mA has been successfully saved as a result of new scheme. In addition, the module size has been reduced to be as small as 1.08CC.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.698-701
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• 2008

본 논문에서는 상용소자의 특성과 상향변환기의 모듈에 소요되는 링크전력을 비교 분석하여 Ka-band VSAT UPCONVERTER를 설계하였다. $30GHz{\sim}31GHz$대역에서 2W 출력신호를 나타내기 위하여 상향변환시스템은 IF증폭단, 감쇄기, 믹서단, 대역통과필터 및 2W 전력증폭단으로 구성시켰으며 상용MMIC를 이용하여 설계된 상향변환모듈은 $6.29dBm{\sim}7.88dBm$의 출력전력, 이득은 $23.19{\sim}28.15dB$을 Cain flatness는 4.95dB를 나타내었다. 최종단의 전력증폭기는 $33.75{\sim}34.96dBm$의 출력전력을 나타내었으며 이득은 $38.5{\sim}41.98dB$로 측정되었다.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.3
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• pp.421-432
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• 2020

This paper proposes a 2-kW solid-state power amplifier (SSPA) developed by employing power amplifier pallets designed using gallium-nitride high electron mobility transistors, which is used in S-band military radars and to replace existing traveling-wave tube amplifier (TWTA). The SSPA consists of a high-power amplifier module, which combines eight power amplifier pallets, a drive amplifier module, a digital control module, and a power supply unit. First, the amplifier module and component were integrated into a small package to account for space limitations; next, an on-board harmonic filter was fabricated to reject spurious components; and finally, an auto gain control system was designed for various duty ratios because recent military radar systems are all active phase radars using the pulse operation mode. The developed SSPA exhibited a max gain of 48 dB and an output power ranging between 63-63.6 dBm at a frequency band of 3.1 to 3.5 GHz. The auto gain control function showed that the output power is regulated around 63 dBm despite the fluctuation of the input power from 15-20 dBm. Finally, reliability of the developed system was verified through a temperature environment test for nine hours at high (55 ℃) / low (-40℃) temperature profile in accordance with military standard 810. The developed SSPA show better performance such as light weight, high output, high gain, various safety function, low repair cost and short repair time than existing TWTA.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.105-105
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• 2012

본 논문에서는 전세계적으로 차세대 에너지절감 반도체로 각광을 받고 있는 GaN 소자의 연구개발 동향에 관하여 발표하고자 한다. GaN 반도체는 와이드 밴드갭(Eg=3.4eV)과 고온 안정성($700^{\circ}C$)등 재료적인 특징으로 인하여 고출력 RF 전력증폭기와 고전력용 전력반도체 응용에 큰 장점을 가진다. 고출력용 GaN RF 전력증폭 소자의 전력밀도는 기존 Si-기반 LDMOS 트랜지스터보다 10배 이상 높아 제품의 소형화와 경량화를 통하여 30% 이상의 전력절감이 가능하며, 레이더, 위성등 송수신 트랜시버 모듈에 GaN 전력증폭기를 이용할 경우 기존 GaAs-기반 전력증폭기에 비하여 높은 전력밀도(>x8)와 높은 효율(>20%)로 인하여 모듈 크기를 50% 이상 줄임과 동시에 경량화를 이룰 수 있어 비행기, 위성등 탑재체의 에너지 절감에 크게 기여할 수 있다. 고전력용 GaN 전력 스위칭 소자는 기존 Si-기반 IGBT에 비하여 스위칭 손실과 온-저항 손실이 낮아 30% 이상의 에너지 절감이 가능하다. 뿐만 아니라, 일본 도요타 자동차사의 보고에 의하면 HEV등 전기자동차의 DC-DC 부스터 컨버터나 DC-AC 인버터에 GaN 전력반도체를 적용할 경우 경량화, 변환효율 향상, 전용 냉각시스템을 제거할 수 있어 연료소모를 10% 이상 줄일 수 있어 연간 400불 이상의 에너지 절감 효과를 가진다. 이러한 에너지절감 효과는 미국, 유럽, 일본등 선진국을 중심으로 차세대 GaN 반도체의 신시장 개척과 선진입을 위한 치열한 경쟁 구도의 구동력이 될 것이며, 본 논문을 통하여 GaN 반도체의 연구개발 방향과 상용화의 중요성을 함께 생각해보고자 한다.

• Proceedings of the KAIS Fall Conference
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• 2007.11a
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• pp.71-73
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• 2007

본 논문은 질화갈륨 전력 소자를 이용한 이동통신 중계기 및 기지국용 전력증폭기 모듈의 설계에 대하여 기술하고 있다. 전력 버짓 분석을 통하여 전치증폭기와 구동증폭기, 그리고 최종단 고출력증폭기의 전력 용량을 계산하였고, 여기에 적합한 질화갈륨 소자를 선택하였다. 최종 개발에 앞선 초기버젼의 전력증폭기를 구성하여 1-tone과 2-tone에 대하여 전력특성을 측정해 보았다.